• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• 한국전자파학회논문지
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• 제14권10호
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• pp.996-1003
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• 2003

기존의 트랜스버살 필터는 MMIC로 제작할 때 폭 방향에 비해 길이 방향의 길이가 너무 긴 단점이 있다. 본 논문에서는 필터의 길이 방향 길이를 줄여 제작에 더 유리한 구조를 가질 수 있으며 임의의 높은 결합도도 얻을 수 있는 다중 결합선로 방향성 결합기를 이용한 트랜스버살 필터를 제안하였다. 트랜스버살 필터의 입력단에 입력된 신호는 각 방향성 결합기를 거치면서 유전체와 도체 손실에 의해 점점 작아지기 때문에 뒤쪽에 위치한 방향성 결합기에서 결합된 신호는 설계치보다 작게 되어 필터의 주파수 특성을 열화시킨다. 이러한 현상을 개선하기 위해 수정된 결합계수 계산식을 제시하였다. 유도된 계산식 및 3차원 시뮬레이션을 통해 제안된 필터의 설계 방법과 동작 특성을 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• 한국광학회지
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• 제19권5호
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• pp.381-385
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• 2008

InGaN/Sapphire LED에서 기판 제거와 패키지 방식이 광출력 특성에 미치는 영향을 분석하였다. Sapphire 기판의 제거는 반도체 접합에서 발생된 열의 방출에 도움이 되지만, 반대로 광추출효율이 손상되는 문제점이 수반된다. Sapphire 기판이 제거된 칩을 열전도율이 좋은 금속의 마운트 위에 부착하면, 최대 구동전류는 현저히 증가하고 광출력도 상당히 증가됨으로써, 광추출효율이 손상되는 문제점이 어느 정도 보상된다. 하지만, sapphire 기판이 제거된 칩을 상대적으로 열전도율이 낮은 유전체의 마운트 위에 부착하는 경우에는, 거의 모든 입력전류 범위에서 sapphire 기판이 남아 있는 일반형 칩보다 낮은 광출력을 나타낸다. 따라서, 작은 광출력이 요구되는 응용분야에서는 사용된 칩 마운트의 종류에 무관하게, 일반형 칩이 sapphire 기판이 제거된 칩 보다 유리한 것으로 분석된다.

• 한국환경보건학회지
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• 제26권2호
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• pp.97-107
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• 2000

PCBs [Polychlorinated biphenyls] are halogenated aromatic compounds with the empirical formula C12H10-nCln(n=1~10), and are a mixture of possible 209 different chlorinated congeners. PCBs were widely used as dielectric fluids for capacitors, transformers, plasticizers, lubricant inks, and paint additives. once released into the environment, PCBs persist for years because they are so resistant to degradation. In addition to their high degree of lipophilicity. In 1970s, the worldwide production of PCBs seem to be still in use. The environmental load of PCBs was prohibited since 1983 in Korea. In spite of these actions, many PCBs seem to be still in use. The environmental load of PCBs will continue to be recycled through air, land, water, and the biosphere for decades to come. This study was conducted to measure the concentrations of PCBs I the serum samples of 112 women by GC/MSD(Hewlett Packard 5897 Gas Chromatography-Mass Chromatography Detector) and CG/ECD(Hewlett Packard 5890 series-II gas chromatography-Electron capture detector, U.S.A). The main results of this study were as follows; The mean and standard deviation of serum PCBs were 3.613, 0.759 ppb, respectively and median of it was 3.828 ppb. The correlation coefficients of the concentrations of 13 PCB congeners ranged from 0.7913 to 0..9985 and were significantly correlated between each items(p=0.0001). The PCB concentrations were positively associated with age(simple linear regression; R2=0.86, =0.08023, p<0.001) and with total lipids in serums(simple linear regression; R=0.7058, =0.00486, p<0.001). The age adjusted model (Y=$\beta$0+$\beta$1age+$\beta$2X) was applied for possible predictors of PCBs levels in serum. For BMI(Body Mass Index), major residential area, and fish, meat, and dairy consumption, there was no association with PCBs levels, Also there was negative association for the number of pregnancy and lactation period with PCBs levels.

• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• Journal of Advanced Marine Engineering and Technology
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• 제38권1호
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• pp.48-55
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• 2014

UV 발생용 플래시램프의 전원공급장치는 강력한 아크방전을 유발하기 위하여 높은 승압 비를 갖는 전압변환회로를 가지고 있다. 일반적인 구조는 높은 승압비의 트랜스포머와 배전압정류방식(코크라프트 올튼 회로 등)으로 방전관의 절연을 파괴함과 동시에 방전관에 전류를 급격히 통과시키는 방식으로 구동한다. 이 때, 제논방전관의 방전특성상 입력전류를 제한하지 않으면 방전관의 과다 발열, 전극손실, 봉입기체의 산화가속 등으로 수명저하의 원인이 되므로, 반드시 방전관에 유입되는 전류를 제한해야 되며, 이를 Ballast라 하는데 일반적으로 인덕터나 저항을 사용하여 인입전류량을 제한한다. 트랜스포머의 자가 공진(self-resonance)을 이용하면 낮은 1, 2차권선 비에도 고유주파수의 전후에서 비교적 높은 피크 전압을 얻을 수 있다. 또한 트랜스포머의 특정주파수에서 고유임피던스 성분을 이용하여 출력전압을 필터링하면 제논방전관이 자가 발진방식으로 동작하므로 종래의 회로구성보다 간단하고 경제적인 아크방전 파워 스테이지의 구성이 가능하다.

• 한국세라믹학회지
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• 제49권5호
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• KSBB Journal
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• 제21권2호
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• pp.151-156
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• 2006

본 연구에서는 용매증발법을 이용하여 대표적 생리활성 물질인 Vitamin-C의 불안정성을 극복하기 위하여 HP-${\beta}$-CD와의 포접복합체를 제조하고 수용액상에서의 안정성을 분석하였다. Vitamin-C와 HP-${\beta}$-CD 간의 몰비를 변화시켜 제조한 포접복합체의 안정성 시험 결과 포접 몰비는 1:1로 추정되며, 포접복합체 제조에 사용된 용매의 유전상수가 커질수록 Vitamin-C의 안정성이 향상되는 것을 확인할 수 있었다. 3차 증류수를 용매로 하여 제조된 포접복합체의 경우 순수한 Vitamin-C보다 Vitamin-C의 겉보기 1차 분해속도 상수 값이 감소하는 것을 확인하였는데 이는 결과적으로 Vitamin-C의 안정성이 향상되었음을 의미한다. 따라서 HP-${\beta}$-CD와의 포접복합체 형성은 Vitamin-C의 안정성을 향상시켜 생체이용률을 향상시킬 수 있음을 확인하였으며 불안정한 여러 생리활성물질에 적용할 수 있을 것으로 기대된다.