• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.341-345
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the contact anlge and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/$O_2$ flow rate ratio and the dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and there is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed the chemical shift.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.39-42
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• 2017

E-glass (electrical glass) fiber is the widely used as a reinforced composite material of PCBs (printed circuit boards). However, E-glass fiber is not stable because it has a dielectric constant of 6~7. On the other hand, D-glass (dielectric glass) fiber has a low dielectric constant of 3~4.5. Thus, it is adaptable for use as a reinforcing material of PCBs. In this study, we fabricated D-glass compositions with low dielectric constant, and measured the electrical and optical properties. In the glass composition, the boron content was changed from 9 to 31 wt%. To confirm the dependence of the dielectric constant on melting properties, D-glass with 22 wt% boron was melted at $1550^{\circ}C$ and $1650^{\circ}C$ for 2hrs. The glass melted at $1650^{\circ}C$ had a lower dielectric constant than the glass melted at $1550^{\circ}C$. Therefore, the D-glass with boron of 9~31 wt% was fabricated by melting at $1650^{\circ}C$ for 2hrs, and transparent clear glass was obtained. We identified the non-crystalline nature of the glass using an XRD (x-ray diffractometer) graph. The visible light transmittance values depending on the boron contents were measured and found to be 88.6 % ~ 82.5 %. Finally, the dielectric constant of the D-glass with 31 wt% boron was found to have decreased from 4.18 to 3.93.

• Journal of the Korean Chemical Society
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• v.56 no.1
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• pp.20-27
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• 2012

Complex permittivity spectra of Allyl Chloride (AC), 2-Butanone (2-BU) and their binary mixtures over the entire range of concentration were obtained using the Time Domain Reflectometry (TDR) technique in microwave frequency range at various temperatures. Static dielectric constant and relaxation time are obtained from complex permittivity spectra. Density ($\rho$) and refractive index ($n_D$) are also measured. These parameters are used to determine excess dielectric constant, excess inverse relaxation time, excess molar volume, excess molar refraction, polarity, Bruggeman factor and thermodynamic parameters viz. enthalpy of activation and entropy of activation. The values of static dielectric constant and relaxation time increases while density and refractive index decreases with the percentage of 2-Butanone in Allyl Chloride increases. Excess parameters were fitted to a Redlich-Kister equation.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.329-337
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• 1991

The Ni-MgO composites were prepared by coprecipitation of NiO-MgO solid solutions and their selective reduction in a hydrogen atmosphere. We report on the measurements of both ac conductivity $\sigma$ ($\omega$, f) and dielectric constant $textsc{k}$'($\omega$, f) for the Ni-MgO composites in the frequency range from 10 Hz to 10 MHz at room temperature. The frequency exponents of conductivity and dielectric constant, x and y, are found to be x=0.98$\pm$0.05 and y=0.05$\pm$0.01. These results are in good agreement with a general scaling relation $\chi$-y=1, although these values are different from the theoretical predications. The dielectric constant exponent ($textsc{k}$' f-fc -s) is found to be s=0.62$\pm$0.07 with estimated percolation threshold fc=0.20$\pm$0.02.

• Smart Structures and Systems
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• v.16 no.6
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• pp.1091-1105
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• 2015

Piezoelectric coefficient and dielectric constant of PZT-5H vary with electric field. In this work, variations of these coefficients with electric field are included in finite element modelling of a cantilevered plate instrumented with piezoelectric patches. Finite element model is reduced using modal truncation and then converted into state-space. First three modal displacements and velocities are estimated using Kalman observer. Negative first modal velocity feedback is used to control the vibrations of the smart plate. Three cases are considered v.i.z case 1: in which variation of piezoelectric coefficient and dielectric constant with electric field is not considered in finite element model and not considered in Kalman observer, case 2: in which variation of piezoelectric coefficient and dielectric constant with electric field is considered in finite element model and not considered in Kalman observer and case 3: in which variation of piezoelectric coefficient and dielectric constant with electric field is considered in finite element model as well as in Kalman observer. Simulation results show that appreciable amount of change would appear if variation of piezoelectric coefficient and dielectric constant with r.m.s. value of electric field is considered.

• Journal of the Korean Society of Safety
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• v.23 no.3
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• pp.51-57
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• 2008

NDT(Non-Destructive Testing Evaluation) using electromagnetic(EM) properties can be used for evaluation of physical performance in cement-based materials. In this study, a technique for strength evaluation in cement mortar is proposed through the measured EM properties(conductivity and dielectric constant). For this research, cement mortar specimens with 5 W/C ratios are made for evaluation of compressive strength and they are also utilized for tests of EM properties in the range of $0.2{\sim}20GHz$ frequency considering exposure condition and curing period. The averaged conductivity and dielectric constant in $5{\sim}20GHz$ frequency are reduced to $83{\sim}93%$ and $81{\sim}87%$, respectively with increasing water to cement ratios. Through the linear regression analysis, relationships between EM properties and results from the compressive strength are obtained, which shows higher correlated factor($0.93{\sim}0.94$) in the specimens exposed to room condition. The gradients in dielectric constant for strength results is measured to be higher than those in conductivity by $3.9{\sim}5.1$ times. The results from dielectric constant in room condition shows the most efficient relation for evaluation of strength.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.