• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.34-37
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• 2003

[ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.244-252
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• 2002

The electrical and dielectric behavior fort DC accelerated aging stress of P $r_{6}$ $O_{11}$-based Zno varistors cnsisting of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$ were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. The varistor ceramics with increasing sintering temperature were more densified. A more densified varistors leaded to high stability for DC accelerated aging stress. Furthermore, the stability for DC accelerated aging stress was increased with the leakage current and dtan $\delta$/dV decreasing in order of 1325longrightarrow1335longrightarrow1345longrightarrow134$0^{\circ}C$ in sintering temperature. It was found that the stability for DC stress is affected more greatly by the leakage current and dtan $\delta$/dV than the densification. It is considered that the stability of varistors for DC stress can be estimated by considering the factors, such as the densification, leakage current, and dtan $\delta$/dV. As a result, the varistor sintered at 134$0^{\circ}C$ exhibited the highest stability, with %$\Delta$ $V_{lmA}$=-1.54%, %$\Delta$$\alpha$=-2.49%, %$\Delta$ $I_{\ell}$=+240.68%, 5%$\Delta$tan$\delta$=+29.96%.96%.96%.%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.169-170
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• 2005

본 연구에서는 초음파 센서에 응용 가능한 $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3+0.5Wt%$ $MnO_2$ 세라믹스에 Zr/(Ti+Zr)비를 0.37에서 0.41로 변화시킨 조성을 1175 $\sim$ 1200$^{\circ}C$ 온도에서 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성을 고찰하였다. 본조성에서 x=0.385 조성에서 최대 유전상수 값 3490 이 나타났으며, 그 이상의 첨가에서는 감소하였다. 상경계 영역인 x=0.385 조성에서 $\varepsilon$r, $K_p$, $d_{33}$ 값이 최대값을 나타내었다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3+0.5Wt%$ $MnO_2$, 세라믹스에서는 kp 와 $d_{33}$ 는 Zr/(Ti+Zr)비 0.385조성까지 증가하였다가 그 이상 조성에서 감소하였다. $1175^{\circ}C$에서 2시간 소결한 x=0.385조성에서 $\varepsilon$r=3490, kp=0.71, Qm=476의 우수한 압전 특성을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.628-634
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• 2002

Formation rate of tetragonal BaTiO$_3$powder by hydrothermal synthesis and its dielectric property were studied. Submicron tetragonal BaTiO$_3$ powders were prepared hydrothermally, using Ba(OH)$_2$.8$H_2O$, TiO$_2$(anatase) and KOH as starting chemicals. Characterization via X-ray diffractometry, field emission scanning electron microscopy confirmed that increasing calcination temperatures(from 1100 to 130$0^{\circ}C$) promotes the formation of tetragonal BaTiO$_3$. Tetragonal BaTiO$_3$ ceramics, obtained by calcining at 1200 for 3 h after hydrothermal synthesis at 200 for 168 h, exhibited submicron size of 0.5 ~ 0.7 ${\mu}{\textrm}{m}$ and high relative permittivity.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1229-1233
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• 2000

(1-x)NdAlO$_3$-xCaTiO$_3$세라믹스의 결정구조와 마이크로파 유전특성을 조사하였다. 시편의 결정구조는 조성에 따라서 변화하였는데, 그 결정구조는 x$\leq$0.1일 때는 능면정(rhombohedral) 구조를, 0.3$\leq$x$\leq$0.7에서는 정방정 (tetragonal) 구조를 그리고, x$\geq$0.7일 때 다시 사방정 (orthorhombic) 구조로 바뀌었다. 또한 (1-x)NdAlO$_3$-xCaTiO$_3$세라믹스에서 이차상의 두 종류가 발견되었다. x$\leq$0.5인 시편에서는 Nd$_4$Al$_2$O$_{9}$상이, x$\geq$0.7인 시편에서는 Al-rich상이 발견되었다. x가 증가함에 따라, 유전율 ($\varepsilon$$_{r}$)과 공진주파수의 온도계수 ($ au$$_{f}$ )가 증가하였고, Q$\times$f 값은 x의 증가에 따라 증가하며, x=0.5일 때 최대값을 얻었다. 그리고 0.3NdAlO$_3$-0.7CaTiO$_3$에서 Q$\times$f=46,000, $\varepsilon$$_{r}$=45 그리고 $\tau$$_{f}$ =-1.5 ppm/$^{\circ}C$의 우수한 마이크로파 유전특성을 얻을 수 있었다.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.489-494
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• 2018

Lead free $(1-x)(0.675BiFeO_3-0.325BaTiO_3)-xLiTaO_3$ (BFBTLT, x = 0, 0.01, 0.02, and 0.03, with 0.6 mol% $MnO_2$ and 0.4 mol% CuO) were prepared by a solid state reaction method, followed by air quenching and their crystalline phase, morphology, dielectric, ferroelectric and piezoelectric properties were explored. An X-ray diffraction study indicates that lithium (Li) and tantalum (Ta) were fully incorporated in the BFBT materials with the absence of any secondary phases. Dense ceramic samples (> 92 %) with a wide range of grain sizes from $3.70{\mu}m$ to $1.82{\mu}m$ were obtained in the selected compositions ($0{\leq}x{\leq}0.03$) of BFBTLT system. The maximum temperatures ($T_{max}$) were mostly higher than $420^{\circ}C$ in the studied composition range. The maximum values of maximum polarization ($P_{max}{\approx}31.01{\mu}C/cm^2$), remnant polarization ($P_{rem}{\approx}22.82{\mu}C/cm^2$) and static piezoelectric constant ($d_{33}{\approx}145pC/N$) were obtained at BFBT-0.01LT composition with 0.6 mol% $MnO_2$ and 0.4 mol% CuO. This study demonstrates that the high $T_{max}$ and $d_{33}$ for BFBTLT ceramics are favorable for industrial applications.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1809-1811
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• 2000

High power piezoelectric materials are presently being extensively developed for applications such as ultrasonic motors and piezoelectric transformer In this study, the piezoelectric and dielectric properties of $MnO_2$ doped $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ (hereafter PSNNT), which is the morphotropic phase boundary composition of the PSN-PNN-PT system were investigated. $MnO_2$-addition into the $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ composition increases the piezoelectric coefficient up to $k_{p}{\fallingdotseq}$55.6[%] and $Q_{m}{\fallingdotseq}$252. Moreover, $MnO_2$ addition makes tetragonal phase more stable with respect to rhombohedral phase.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.508-516
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• 1992

In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.1
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• pp.53-59
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• 1999

The ceramic capacitor was fabricated by $(Ba_{0.85}Ca_(0.15)TiO_3+ZnO$ + ZnO(from 0.1 to 0.4 mol ratio). The electrical and structural properties of ceramic capacitor for high voltage application was studied in this study. The relative rensity of ceramics capacitor has shown high in all specimen. The grain was a small size from $1.0[\mum]$ to $1.22[\mum]$ and it was increased with ZnO at 0.3 mol ratio. It was stabilized that the temperature coefficient of ceramic capacitor to change temperature had below 100[ppm] at 0.12~10[kHz]. The dielectric reIaxation time was decreased by interface polarization over $110[^{\circ}C]$ and it was increased by space polarization of paraelectric layer below $110[^{\circ}C]$. The insulating layer was increased with ZnO and dielectric constant to voltage was stabilized by 0.1[%].0.1[%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.281-281
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• 2007

Low Temperature Co-fired Ceramic (LTCC) technology has been used in electronic device for various functions. LTCC technology is to fire dielectric ceramic and a conductive electrode such as Ag or Cu thick film below the temperature of $900^{\circ}C$ simultaneously. The glass-ceramic has been widely used for LTCC materials due to its low sintering temperature, high mechanical properties and low dielectric constants. To obtain the high strength, addition of filler, the microstructure should have various crystals and low pores in a composite. In this study, two glass frits were mixed with different alumina size(0.5, 2, 3.7um) and sintered at the range of $850{\sim}950^{\circ}C$. The microstructure, crystal phases, thermal and mechanical properties of the composites were investigated using FE-SEM, XRD, TG-DTA, Dilatomer. When the particle size of $Al_2O_3$ filler increased, the starting temperatures for the densification of the sintered bodies, onset point of crystallization, peak crystallization temperature in the glass-ceramic composites decreased gradually. After sintered at $900^{\circ}C$, the glass frits were crystallized as $CaAl_2Si_2O_8\;and\;CaMgSi_2O_6$. The purpose of our study is to understand the relationship between the $Al_2O_3$ particle size and thermal properties in composites.