• 제목/요약/키워드: Dielectric breakdown voltage

검색결과 354건 처리시간 0.023초

진단용 X 선관 절연유의 전기적 특성 (Electrical Properties of Insulating Oils for Diagnostic X-ray Tube)

  • 김건중;이인성;백금문;김두호;김왕곤;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.597-600
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    • 2001
  • In order to investigate the electrical properties of X-ray tube oils for insulating and cooling, the breakdown characteristics in temperature range of 20∼100[$^{\circ}C$], that of AC breakdown in 0.5∼2.5(mm) of gap length, we are made researches. The classification for the physical properties of oil for X-ray tube by FTIR and $^1$H-NMR experiments was confirmed to type of mineral oils. As for the dependance of breakdown characteristics due to electrode gap length, breakdown voltage was found nearly uniform by impurity effect according to the increase of gap. As a result the characteristics for AC breakdown, the dielectric strength was increased to 90[$^{\circ}C$] but decreased over 90[$^{\circ}C$] in the temperature range.

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Breakdown Properties of Coolant for HTS Apparatus Operating at Cryogenic Temperature

  • S.M. Baek;J.M. Joung;Kim, S.H
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권1호
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    • pp.52-55
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    • 2003
  • For the dielectric insulation design of any high temperature superconducting (HTS) apparatus in the electrical power systems, the breakdown properties of cryogenic coolants such as $LN_2$ are an important factor of the insulating engineering. Therefore, this paper presented an experimental investigation of breakdown phenomena in $LN_2$ under AC voltage. And we studied the breakdown properties of LN2 with decreasing temperature. Also, the Weibull plots of the breakdown voltage of subcooled $LN_2$ at 65 K for the needle-plane electrode with electrode distance d= 10 mm are studied. The dependence of breakdown voltage for needle-plane and pancake coil-pancake coil electrode on temperature is illustrated. The experimental data suggested that the breakdown voltage of L$N_2$ depend strongly on the temperature of $LN_2$. The breakdown characteristics of $LN_2$ under quasi-uniform and non-uniform electrical field for temperature ranging from 77 K to 65 K were clarified.

친환경 고전압 전력기기 개발을 위한 GN2의 절연특성 분석 (Analysis on the Dielectric Characteristics of Gaseous Nitrogen for Developing Eco-friendly High Voltage Apparatuses)

  • 방승민;이온유;김준일;강종오;이홍석;고태국;강형구
    • 전기학회논문지P
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    • 제63권4호
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    • pp.356-360
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    • 2014
  • The environmental pollution caused by green-house gases such as $SF_2$ has been becoming the main issue of industrial society. As a part of these efforts, 180 countries signed the Kyoto Protocol in 1997 to cut back on their green-house gas emissions [1]. Therefore, a study on the dielectric characteristics of the $GN_2$ is important for designing a eco-friendly high voltage apparatuses. In this paper, to develop an electrically reliable, stable, and eco-friendly high voltage apparatus, the breakdown voltage and partial discharge inception voltage characteristics in $GN_2$ considering utilization factors are studied for the establishment of insulation design criteria of an high voltage apparatus. Dielectric experiments are performed by using several kinds of sphere-plane electrode systems made of stainless steel. Also, the dielectric characteristics of the $GN_2$ are analyzed by using a Finite Elements Method (FEM) according to various field utilization factors. The results are expected to be applicable to designing the high voltage apparatuses using $GN_2$ as an insulation gas.

비정질 실리콘을 이용한 다층 유전 박막의 전기적 특성에 관한 연구 (Study on Electric Charactreistics of Multi-dielectric Thin Films Using Amorphous Silicon)

  • 정희환;정관수
    • 한국진공학회지
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    • 제3권1호
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    • pp.71-76
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    • 1994
  • The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

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도데실알콜이 첨가된 LDPE의 전기적 특성 (Electrical Properties of the LDPE mixed with Dodecyl Alcohol)

  • 김상준;이창희;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.110-113
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    • 1992
  • This paper presents the results on experiments of relative dielectric constant dielectric loss, conductivity change and breakdown voltage of the L.D.P.E. mixed with Dodecyl Alcohol. The frequency range is 0.1 - 20 MHz and temperature, 20 - 80 $^{\circ}C$. Dielectric properties were similar to those of nonpolar polymers. Until $60^{\circ}C$ the conductivity value of compound was decreased with temperature increasment. And, its breakdown voltage was measured higher, about 3-4KV, than that of the pure L.D.P.E.. Also the amount of remnants of DA in the compounds were considered.

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Nano-composites 절연파괴강도의 온도의존성 (Temperature dependance of Dielectric strength in Nano-composites)

  • 이강원;이혁진;김종환;신종열;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.256-257
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    • 2008
  • Recently, with the increase of demand of electricity, electric cable or electric transfer machine are rapidly developed and meet the demand with the extra high voltage and massive capacity, the dangers of electrical accident of insulator are increasing by the electric stress, insulation degradation and insulation breakdown in insulator. In this paper, it is investigated that the temperature dependance of dielectric strength in nano-composites. We obtained that breakdown voltage of 0.4 [wt%] specimens is higher than the other $SiO_2$ content.

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Study on Electrical Characteristics According Process Parameters of Field Plate for Optimizing SiC Shottky Barrier Diode

  • Hong, Young Sung;Kang, Ey Goo
    • Transactions on Electrical and Electronic Materials
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    • 제18권4호
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    • pp.199-202
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    • 2017
  • Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

고차구조 변화에 따른 저밀도폴리에틸렌 박막의 전기적 특성 (Electrical Properties of Low Density Polyethylene Film by Superstructure Change)

  • 신종열;신현택;이수원;홍진웅
    • 한국안전학회지
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    • 제17권4호
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    • pp.101-109
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    • 2002
  • The electrical properties of polyethylene are changed by the superstructure. Such crystalline polymer as polyethylene or polypropylene changes crystallinity and products spherulite or trans-crystal when it is cooled slowly. In this study, after thermal treatment of LDPE at 100[${circ}C$], in silicone oil for an hour, we made specimens in order of slow cooling, water cooling, quenching according to cooling speed. Also, to study the influence of electrical properties due to the superstructure change, we analyzed physical properties and performed dielectric breakdown experiments using DC and impulse voltage Moreover we measured space charges in bulk using Laser Induced Pressure Pulse(LIPP) method. Trap level of specimen is 0.064[eV] at the low temperature region 0.31[eV] at the high temperature region in DC dielectric strength, 0.03[eV] at the low temperature region 0.0925[eV] at the high temperature region in impulse dielectric strength. As its result shows that the quantity of charges induced from the electrode surface increases with applied voltage time, and the distribution of space charges in samples increases the quantity of charges in proportion to applied voltage.

평등전계에서 SF6/CF4 혼합가스의 AC절연내력 특성 (AC Breakdown Voltage Characteristics of SF6/CF4 in Uniform field)

  • 황청호;박신우;김남렬;허창수
    • 한국전기전자재료학회논문지
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    • 제20권4호
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    • pp.381-387
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    • 2007
  • The excellent dielectric properties of $SF_6$(sulfur hexafluoride) have lead to its wide range of application in the field of high voltage insulation. Because there has been some recent concern regarding the environmental impacts of $SF_6$ binary gas mixtures, with $SF_6$ as the main component, have been the subject of active research. Scientists have long been interested in the possible use of gaseous fluorocarbons, including $CF_4$ (Carton Tetrafluoride), in high voltage applications due to their inert character and high dielectric strength. This paper presents experimental results concerning the AC breakdown characteristics lot various mixtures of $SF_6/CF_4$ in a test chamber and 25.8 kV GIS (Gas Insulation Switchgear) at practical pressures (0.1-04 MPa) and gap lengths (0.5 mm, 1 mm) in a test chamber. In the result, it was observed that an increase in the dielectric strength is attained through the addition of $SF_6$ to $CF_4$. It is possible to make an environment friendly gas insulation material while maintaining the dielectric strength by combing $SF_6$ and $CF_4$ which generates a lower level of the "global warming" effect.

SiON 절연층 nMOSFET의 Time Dependent Dielectric Breakdown 열화 수명 예측 모델링 개선 (Improving Lifetime Prediction Modeling for SiON Dielectric nMOSFETs with Time-Dependent Dielectric Breakdown Degradation)

  • 윤여혁
    • 한국정보전자통신기술학회논문지
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    • 제16권4호
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    • pp.173-179
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    • 2023
  • 본 논문에서는 4세대 VNAND 공정으로 만들어진 Peri 소자의 스트레스 영역 별 time-dependent dielectric breakdown(TDDB) 열화 메커니즘을 분석하고, 기존의 수명 예측 모델보다 더 넓은 신뢰성 평가 영역에서 신속성과 정확성을 향상시킬 수 있는 수명 예측 보완 모델을 제시하였다. SiON 절연층 nMOSFET에서 5개의 Vstr 조건에 대해 각 10번의 constant voltage stress(CVS) 측정 후, stress-induced leakage current(SILC) 분석을 통해 저전계 영역에서의 전계 기반 열화 메커니즘과 고전계 영역에서의 전류 기반 열화 메커니즘이 주요함을 확인하였다. 이후 Weibull 분포로부터 time-to-failure(TF)를 추출하여 기존의 E-모델과 1/E-모델의 수명 예측 한계점을 확인하였고, 각 모델의 결합 분리 열화 상수(k)를 추출 및 결합하여 전계 및 전류 기반의 열화 메커니즘을 모두 포함하는 병렬식 상호보완 모델을 제시하였다. 최종적으로 실측한 TDDB 데이터의 수명을 예측할 시, 기존의 E-모델과 1/E-모델에 비해 넓은 전계 영역에서 각 메커니즘을 모두 반영하여 높은 스트레스에서 신속한 신뢰성 평가로 더 정확한 수명을 예측할 수 있음을 확인하였다.