• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.119-122
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• 2002

The calculated and measured dielectric constant of (1-x)(Al$\sub$1/2/Ta$\sub$1/2/)O$_2$-x(Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$(O$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ and (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ was substituted by (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$, the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$was slightly bigger than one of (A1$\sub$1/2/Ta$\sub$1/2)O$_2$, the cell parameters increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.108-112
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• 2003

The calculated and measured dielectric constants of (1-x)(A $l_{1}$2/ T $a_{1}$2/) $O_2$-x(M $g_{1}$3/ T $a_{2}$3/) $O_2$ (0$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (A $l_{1}$2/ T $a_{1}$2/) $O_2$ and (M $g_{1}$3/ T $a_{2}$3/) $O_2$ were orthorhombic and tetragonal trirutile structure, respectively. When (A $l_{1}$2/ T $a_{1}$2/) $O_2$ was substituted by (M $g_{1}$3/ T $a_{2}$3/) $O_2$, the phase transformed to tetragonal structure over 60 mole. Because the total ionic radius of [(Mg+2Ta)/3]$^{4+}$ was slightly bigger than one of [(Al+Ta)/2]$^{4+}$, the lattice parameters increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution. The measured dielectric constant increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.738-743
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• 2004

The microwave dielectric properties and their related structural characteristics in solid solutions of (1-x) $Ba(Mg_{1/3}Nb_{2/3})O_3$ -x $La(Mg_{2/3}Nb_{1/3})O_3$ (BLMN) have been investigated by measuring the dielectric constant${\varepsilon}r)$, Q value and temperature coefficient of resonant frequency$({\tau}f)$ and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant$({\varepsilon}r)$ showed maximum value at the composition which corresponds to the phase boundary between 1:2 ordered and 1:1 ordered structure. The increase in ${\varepsilon}_r$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency${{\tau}_f)$ was investigated in terms of oxygen octahedra tilting.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.21-25
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• 1989

Theory and experimental results are presented to show the possibility of using a dielectric rod resonator method for characterizing dielectric materials at microwave frequency. The measuring structure is a resonator made up of a cylindrical dielectric rod placed between two parallel conducting plates. In this system, the TE$\_$011/ mode frequency was adapted to minimize the effect of the air-gap between the rod and the conducting plates. The dielectric properties are computed from the resonance frequencies, structure dimensions and 3-dB bandwidth.

• ETRI Journal
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• 제21권3호
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• pp.41-48
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• 1999

We have calculated differential reflection coefficient for isolated well structure of micro-scale, etched on dielectric surface. The differential reflection coefficient is computed using Green's second integral theorem. The purpose of our computation is to find a class of well profiles which give maximal diffusive scattering. To have such a maximal effect, we have concluded that the waist radius of Gaussian beam and its wavelength should be comparable to the well width and that well depth has to be larger than a wavelength. Exact calculation of differential reflection coefficients of dielectric surface with isolated structure on it may be used for the examination of dielectric surfaces and also in making simple but efficient diffuser.

• 한국광학회지
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• 제22권6호
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• pp.269-275
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• 2011

회절한계 이하의 모드 크기를 가지는 금속-유전체 혼합 광도파로 구조를 제안하고자 한다. 제안된 혼합 광도파로는 금속 나노선이 유전체 평면 위에 놓인 구조로서, 금속선과 유전체 사이에 구속된 파장보다 작은 크기의 표면-플라즈몬 모드의 특성을 기존의 유전체 나노선을 이용하는 구조와 비교 분석하였다. 두 도파로의 모드 크기와 전파 거리는 나노선의 직경이 큰 경우에는 비슷한 경향을 보이나, 직경이 작아짐에 따라 서로 상이한 값을 가진다. 회절 한계보다 100배 이상 작은 모드를 갖는 파장길이의 나노 공진기 구현을 위해서는 제안된 금속 나노선-유전체 광 도파로 구조가 적합함을 보였다.

• Journal of electromagnetic engineering and science
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• 제6권1호
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• pp.1-9
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• 2006

A sandwich structure of dielectric material and air gap inside a rectangular waveguide is proposed as a fast electrically tunable low-loss phase shifter. As the dielectric material is shifted up and down by piezoelectric actuator and, thereby, the thickness of air gap is changed, the effective dielectric constant of the sandwich structure is varied. Phase shifters based on the sandwich structure with different dielectric materials showed phase shift of $20{\sim}200^{\circ}/cm$ at X-band as the thickness of air gap varied up to $30{\mu}m$. The idea can be extended toward low-loss millimeter wave phase shifters since modem microwave ceramics have been developed to show very low dielectric loss$(tan\;{\delta}{\sim}10^{-4})$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.663-666
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• 2004

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

• 전기학회논문지
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• 제59권5호
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• pp.918-921
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• 2010

We have proposed an dielectric layer to improve the luminance of red organic light emitting device. Here, we have calculated refractive index of dielectric layer material that was revised refractive index of organic material, ITO and glass. Refractive index of dielectric layer material was 1.711. The structure of dielectric layer was designed in organic material/ITO/dielectric layer/glass. Dielectric material changed thickness that deposited by ion-assisted deposition system. Transmittances of ITO were 95.66-98.85 [%]. Red OLED was fabricated with the structure of TPD($400[{\AA}]$)/DCMII($20[{\AA}]$), Rubrene($20[{\AA}]$)/Alq3($500[{\AA}]$)/LiF($15[{\AA}]$)/Al($1,000[{\AA}]$). Turn-on voltage and Luminance of Red OLED were 10 [V] and 5,857 cd/m2.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.