• Electrical & Electronic Materials
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• v.7 no.1
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Progress in Superconductivity
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• v.13 no.1
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• pp.24-27
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• 2011

High voltage insulation in cryogenic environment is one of big issues for development of superconducting power application, such as superconducting fault current limiter, transformer, transmission cable, and so on. We had proposed a composite solid insulator composed of plastics and polymer insulation sheets for a use of high voltage superconducting power applications. It is well known that the G10 FRP keeps its mechanical strength at very low temperature and the PPLP is very good insulator adopted as insulations for superconducting transmission cables. The composition of these two materials will show very good electrical and mechanical properties adequate for the insulation components of superconducting power applications, such as bushing, insulation barrier, and even for a cryostat. Dielectric strengths of prepared samples were measured at the temperature of boiling point of liquid nitrogen at atmospheric pressure, which will be presented in this paper to show a usefulness of this technique.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.3
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• pp.399-407
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• 1998

The infrared reflection coatings with pigment can be used to protect the surfaces of combustible materials exposed to fire. To obtain high reflectivities in the infrared range (0.5-10.mu.m) important to fire, several dielectric pigments, such as titanium dioxide, iron oxide, and silicon, can be synthesized to polymer coatings. The theoretical analysis shows that the coating design with particles diameter in the 1.5 to 2.5.mu.m range and volume fraction in the 0.1 to 0.2 range is estimated to be optimal. In the analysis of the radiation, the dependent scattering, absorption by polymeric binder, and the internal interface reflection are considered. In addition, the temperature distribution in the semi-transparent coating layer and an opaque substrate (PMMA) is also presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.336-336
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• 2011

Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.

• Analytical Science and Technology
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• v.23 no.2
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• pp.103-108
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• 2010

Single crystals of $ZnWO_4$ with [100], [010] and [001] directions were successfully grown by the Czochralski method. The seed crystals for the single crystal growth of $ZnWO_4$ could be induced by the crystal growth using platinum wires applied by the capillary action from the melt. The growth conditions in each direction were investigated in terms of the variations of rotation speed, pulling rate and diameter of the grown crystals. The formation of cracking in the grown crystals during the cooling process could be prevented by annealing effect. The growth directions of the grown crystals were determined using Laue back reflection. The microscopic characteristics of the grown crystals in each direction were discussed, and their physical properties were evaluated for hardness, thermal expansion coefficients and dielectric constants.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.391-396
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• 2006

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polystyrene to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated polystyrene. Optically encoded DBR PSi/polystyrene composite films retain the optical reflectivity. Optical characteristics of DBR PSi/polystyrene composite films are stable and robust for 2 hrs in a pH=7 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1079-1084
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• 2002

Because complex insulation method is used in EHV(extra high voltage) insulation systems, macro Interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. Interface between toughened epoxy and silicone rubber was selected as a interface in EHV insulation systems and tested AC interfacial breakdown properties with variation of many conditions to influence on electrical Properties, such as interfacial pressure, roughness and oil. Specimen was designed to reduce the effect of charge transport from electrode in the process of breakdown and to have the tangential electrical potential with the direction of the interface between epoxy and silicone rubber by using FEM(finite elements method). It could control the interfacial pressure, roughness and viscosity of oil. From the result of this study, it was shown that the interfacial breakdown voltage is improved by increasing interfacial Pressure and oil. In particular, the dielectric strength saturates at certain interracial Pressure level. The decreasing ratio of the interfacial breakdown voltage in non-oiled specimen was increased by the temperature rising, while oiled specimen was not affected by temperature.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.413-415
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• 2000

Piezoelectric ceramics of PZT have been developed to apply for transformers in notebook. Use of piezoelectric ceramics in applications like piezoelectric transformers was made possible by the development of new materials with high electromechanical coupling coefficients and high mechanical quality factor. "Hard" ferroelectiric ceramics of complex composition based on lead zirconate titanate with Mn additive have been prepared. The perovskitic phase reaction of the oxides. The crucial role played by the intermediate mixing and grinding procedures in the assessment of the final properties of the material was investigated. Densification up to approximately the theoretical density value was achieved. The polarization was obtained by subjecting the samples at $30kVcm^{-1}$ poling electric field, in a silicon oil bath heated at $110^{\circ}C$. Their microstructural and morphological properties were checked by X-ray diffraction analysis and scanning electron microscopy. The optimized samples presented very high qualify and electromechanical coupling factors, together with small dielectric loss.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.190-195
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• 1995

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.