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http://dx.doi.org/10.5369/JSST.2006.15.6.391

1-D photonic crystals of free-standing DBR PSi for sensing and drug delivery applications  

Koh, Young-Dae (Department of Chemistry, Chosun University)
Kim, Ji-Hoon (Department of Chemistry, Chosun University)
Park, Jong-Sun (Department of Chemistry, Chosun University)
Kim, Sung-Gi (Department of Chemistry, Chosun University)
Kim, Dong-Su (Department of Chemistry, Chosun University)
Cho, Sung-Dong (Department of Chemistry, Chosun University)
Sohn, Hong-Lae (Department of Chemistry, Chosun University)
Publication Information
Journal of Sensor Science and Technology / v.15, no.6, 2006 , pp. 391-396 More about this Journal
Abstract
Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polystyrene to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated polystyrene. Optically encoded DBR PSi/polystyrene composite films retain the optical reflectivity. Optical characteristics of DBR PSi/polystyrene composite films are stable and robust for 2 hrs in a pH=7 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.
Keywords
distributed Bragg reflector (DBR); polystyrene; porous silicon; caffeine; composite film;
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1 J.-H. Sim, D.-K. Kim, c.-S. Cho, H.-S. Tae, S.-H. Hahm, and J.-H. Lee, 'Fabrication of piezoresistive silicon acceleration sensor using selectively porous silicon etching method', J. of the Korean Sensors Society, vol. 5, no. 5, pp. 21-29, 1996
2 S.-J. Kim, 'Study on the development of mesa-type humidity sensors using porous silicon layer', J. of the Korean Sensors Society, vol. 8, no. I, pp. 32-37, 1999
3 M. S. Yoon, K. H. Ahn, R. W. Cheung, H. Sohn, J. R. Link, F. Cunin, and M. J. Sailor, 'Covalent crosslinking of 1-D photonic crystals of microporous Si by hydrosilylation and ring-opening metathesis polymerization', Chem. Commun., pp. 680-681, 2003
4 A. Uhlir, 'Electronics shaping of germanium and silicon', Bell System Tech., vol. 35, pp. 333, 1956
5 C. Levy-Clement, A. Lagoubi, and M. J. Tomkiewucz, 'Morphology of porous n-type silicon obtained by photoelectrochemical etching', Electrochem. Soc., vol. 141, pp. 958-967, 1994   DOI
6 A. G. Cullis and L. T. Canham, 'Visible light emission due to quantum size effects in highly porous crystalline silicon', Nature, vol. 353, pp. 335-338, 1991   DOI
7 F. Gaspard, A. Bsiesy, M. Ligeon, F. Muller, and R. J. Herino, 'Exchange mechanism responsible for p-type silicon dissolution during porous silicon formation', Electrochem. Soc., vol. 136, pp. 3043-3046, 1989   DOI
8 P. C. Searson, J. M. Macaulay, and F. M. Ross, 'Pore morphology and mechanism of pore formation in n-type silicon', J. Appl. Phys., vol. 72, pp. 253-258, 1992   DOI
9 A. Nakajima, T. Itakura, S. Watanabe, and N. Nakayama, 'Photoluminescence of porous Si, oxidized then deoxidized chemically', Appl. Phys. Lett., vol. 61, pp. 46-48, 1992   DOI
10 E. J. Lee, T. W. Bitner, J. S. Ha, M. J. S. Shane, and M. J. Sailor, 'Photoinduced surface reactions of reverse-biased n-type porous Si', J. Am. Chem. Soc., vol. 118, pp. 5375-5382, 1996   DOI   ScienceOn
11 J. M. Lauerhaass and M. J. Sailor, 'Chemical modification of the photoluminescence quenching of porous silicon', Science, vol. 261, pp. 1567-1568, 1993   DOI   ScienceOn
12 V. V. Doan and M. J. Sailor, 'Luminescent color image generation on porous silicon', Science, vol. 256, pp. 1791-1792, 1992   DOI   ScienceOn
13 V. S. Lin, K. Motesharei. K. S. Dancil, M. J. Sailor, and M. R. Ghadiri, 'A porous silicon-based optical interferometric biosensor', Science, vol. 278, pp. 840-843, 1997   DOI   ScienceOn
14 A. Bsiesy, J. C. Vial, F. Gaspard, R. Herino, M, Ligeon, F. Muller, R. Romestain, A. Wasiela, A. Halimaoui, and G Bomchil, 'Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers', Surf Sci., vol. 254, pp. 195-200, 1991   DOI   ScienceOn
15 L. T. Canham, 'Silicon quantum array fabrication by electrochemical and chemical dissolution as wafers', Appl. Phys. Lett., vol. 57, pp. 1046-1048, 1990   DOI
16 E. J. Lee, J. S. Ha, and M. J. Sailor, 'Chemical modification of the porous silicon surface', J. Am. Chem. Soc., vol. 117, pp. 8295-8296, 1995   DOI   ScienceOn
17 W. H. Green, E. J. Lee, J. M. Lauerhaas, T. W. Bitner, and M. J. Sailor, 'Electrochemiluminescence from porous silicon in formic acid liquid-junction cells', Appl. Phys. Lett., vol. 67, pp. 1468-1470, 1995   DOI   ScienceOn
18 H. Sohn, S. Letant, M. J. Sailor, and W. C. Trogler, 'Detection of fluorophosphonate chemical warfare agent by catalytic hydrolysis with a porous silicon interferometer', J. Am. Chem. Soc., vol. 122, pp. 5399, 2000
19 D. T. McQuade, A. E. Pullen, and T. M. Swager, 'Conjugated polymer-based chemical sensors', Chem. Rev., vol. 100, pp. 2537-2574, 2000   DOI   ScienceOn