• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.33-38
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• 2006

유리 조성이 섞인 유전체 파우더와 증류수 그리고 해교제의 혼합으로 만들어진 슬러리를 에어로졸 형태로 고압 스프레이 건으로 기판에 스프레이 코팅 하였다. 기판으로는 알루미나 기판과 전극 패턴이 프린트 된 그린쉬트를 사용하였다. 슬러리 점도와 스프레이 건에 의한 분사모양 그리고 슬러리의 분사량은 코팅 층의 코팅 속도에 영향을 끼쳤으나 밀도에는 거의 영향을 주지 않았다. 고압 스프레이 코팅 방법은 기판에 직접적인 가압 과정이 없으므로 내부 전극은 인쇄된 형태가 유지되었다. 최적 조건에서는 균일하고 조밀한 코팅 층을 얻을 수 있었다. 또한 그린쉬트에 적층 공정을 사용한 기존의 방법과는 달리 고압 스프레이 코팅 방법은 $20{\sim}50{\mu}m$의 얇은 유전체 층을 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1924-1926
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• 2005

Poly(methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observes by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for repeated annealing cycles at $100^{\circ}C$. 1-V measured at various delay times $(0{\sim}20sec)$ showed little change and the absence of hysteresis in the I-V characteristics with delay times, which eliminate the possibility of deep traps in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.660-663
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• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2005년도 ISMP
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• 한국세라믹학회지
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• 제33권11호
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• pp.1195-1202
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• 1996

To prepare the dielectric thin films of (Pb1-xSrx)TiO3 (x=0.1, 0.2, 0.3, 0.35, 0.5) by the sol-gel process titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) and Pb Sr, acetate were used therefore the thin films were fabricated by dip-coating method. Stability of the sol decreased with addition of Sr content thin films could be fabricated up to 35mol% Over this range precipitation of sol occured thin films couldn't be obtained. Transmittance of thin films at visible range decreased with the increase of heat-treatment temperature but exhibited transmit-tance above 60% in all case. Moreover transmittance of thin films at visible range slightly increased with of addition of Sr,. When thin film containing 30 mol% srontium was heated at 600℃ the best perovskite phase was obtained. The dielectric constant (ε) was 280 and dielectric loss factor (tan δ) was 0.021 and curie tempera-ture (Tc) decreased with the increase of addition of Sr.

• 전기전자학회논문지
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• 제24권1호
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• pp.238-242
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• 2020

본 논문에서는 구축함에 탑재되는 통합 마스트의 RCS(Radar Cross Section) 값을 저감시키기 위해 다층 구조로 되어있는 유전체 코팅을 이용한 기법을 제시한다. 제시된 다층 구조는 특별히 고유전율을 요구하거나 전자기파 흡수 차단에 많이 사용되는 자성체성분을 포함하지 않은 일반적인 유전체를 사용할 수 있도록 유전율의 범위를 정했기 때문에 제작에 용이하다는 장점이 있다. 제시된 다층 유전체 구조를 통합 바스트 형상에 적용시킨 후 시뮬레이션을 진행한 결과 다층 구조가 없는 구조물과 비교하여 6GHz에서 10.9dB, 12GHz에서 11.95dB, 18GHz에서 11.63dB의 RCS 저감 성능이 있는 것을 확인하였다.

• 청정기술
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• 제13권2호
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• pp.115-121
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• 2007

본 연구에서는 유전체 장벽 방전-광촉매 복합 공정에 의한 NO 및 $SO_2$ 제거를 실험적으로 분석하였다. 유전체 장벽 방전을 위해 유전체로서 유리구가 사용되었고 $TiO_2$ 광촉매 입자는 딥코팅(dip-coating) 방법에 의해 높은 비표면적을 가지는 스펀지 형태로 유리구에 코팅되었다. 플라즈마 반응기에 인가된 전압이나 펄스 주파수, 혹은 기체의 체류시간이 증가함에 따라, NO 및 $SO_2$의 제거효율은 증가하였다. NO 및 $SO_2$ 공급농도 증가하면 NO 및 $SO_2$ 제거에 더 많은 에너지가 요구되어 NO 및$SO_2$의 제거효율이 감소하였다. 본 연구의 실험 결과들은 NO 와 $SO_2$를 제거하기 위한 유전체 장벽 방전-광촉매 복합 공정 설계의 기초 자료로 사용될 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• 한국분말재료학회지
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• 제25권5호
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• pp.375-378
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• 2018

Conductive and dielectric SiC are fabricated using electroless plating of Ni-Fe films on SiC chopped fibers to obtain lightweight and high-strength microwave absorbers. The electroless plating of Ni-Fe films is achieved using a two-step process of surface sensitizing and metal plating. The complex permeability and permittivity are measured for the composite specimens with the metalized SiC chopped fibers dispersed in a silicone rubber matrix. The original non-coated SiC fibers exhibit considerable dielectric losses. The complex permeability spectrum does not change significantly with the Ni-Fe coating. Moreover, dielectric constant is sensitively increased with Ni-Fe coating, owing to the increase of the space charge polarization. The improvements in absorption capability (lower reflection loss and small matching thickness) are evident with Ni-Fe coating on SiC fibers. For the composite SiC fibers coated with Ni-Fe thin films, a -35 dB reflection loss is predicted at 7.6 GHz with a matching thickness of 4 mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.