• Journal of the Korean Society of Radiology
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• v.3 no.1
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• pp.17-21
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• 2009

The Recently, large area matrix-addressed image detectors are investigated for X-ray imaging with medical diagnostic and other applications. In this paper, a new flat panel gas detector for diagnostic X-ray imaging is proposed, and its characteristics are investigated. The research of flat panel gas detector is not exist at all. Because of difficulty to inject gas against to atmospheric pressure. So almost gas detector made by chamber shape. We made flat panel sample by display technique. (ex: PDP, Fed, etc.) The experimental measurements, the transparent electrodes, dielectric layer, and the MgO protection layer were formed in front glass. And, the X-ray phosphor layer and address electrodes are formed in the rare glass. The dark current, the x-ray sensitivity and linearity as a function of electric field were measured to investigate the electrical properties. From the results, the stabilized dark current density and the significant x-ray sensitivity were obtained. And the good linearity as a function of exposure dose was showed in wide diagnostic energy range. These results means that the passive matrix-addressed flat panel gas detector can be used for digital x-ray imaging.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Korean Journal of Food Science and Technology
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• v.50 no.2
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• pp.165-171
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• 2018

Atmospheric-pressure plasma (APP) was applied to determine quality characteristics of brown rice (BR) and white rice (WR) of Samkwang and Palbangmi. APP (250 W, 15 kHz, ambient air) was generated and dielectric barrier discharge was applied for 0, 10, and 20 min for 2 weeks at 4 and $25^{\circ}C$. The growth of total aerobic bacteria and mold increased depending on the storage. Water content of BR and WR decreased by storage temperature and periods. No viable counts were detected for molds by APP-treated 20 min at $4^{\circ}C$. Changes in protein and damaged starch contents in plasma were not observed. Amylose contents were not changed, but WR (Palbangmi) showed a tendency to increase. The results show that APP improved the microbial quality of BR and WR of Samkwang and Palbangmi, although further studies should be conducted to determine change in quality by APP.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.944-950
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• 2013

This paper is a study of a rain sensor using an open-ended coaxial cavity resonator which senses the amount of rain drops linearly. It shows that it will be used as a sensor to sense the amount of rain dropped on the windshield of an automobile based on the principle of varied resonant frequency and the loss according to the amount and characteristics of an dielectric lied on the open side of a resonator. The input and output ports are built in the both sides of the resonator and the input and output coupling probes are formed like 'ㄱ' shape. The response of rain drops were simulated by the radius of inner conductor of 2 mm, 5 mm, and 10 mm respectively and it showed that the raindrop was sensed most linearly and sensitively when the radius of inner conductor is 5 mm, We have measured that the resonant frequency have varied from 3.55 GHz to 3 GHz and the Q value have varied from 42.38 to 24.3 according to the variation of rain drop amount on the fabricated resonator. Therefore, it shows that the designed resonator can be applied as a rain sensor that measures the amount of rain drops linearly by using the resonant frequency as a measurement parameter.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.2
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• pp.99-107
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• 1998

This dissertationhas confirmed the non-flam mability of cast mold transformer that is increasingly used lately. As a research progress, the investigation has been performed on the installation status and each line of the subway system which have the most mold transformer accidents, and the impediment status of the transformer for rectifier and the high-voltage distribution transformer per each manufacturer. Then, a high voltage mold of the actual mold transformer has been installed in the horiwntal heating furnace and the heat has been applied by the standard heating temperature curve of KSF 2257(Fireproof testing meth od of the construction structures: 1993). Accordingly, the combustibility of the mold transformer based on the test results has been found that 78 minutes has been required for the complete burning per the KSF 2257 combustion test curve and that, after stopping the heat application of the horizontal furnace after ignition, the flame progress has not been made but shown as the self-extinguishing characteristics when the flame progress has been checked. Thus, the non-flammability and self-extinguishability of the mold transformer have been confirmed. The result of this dissertation has indicated that the accident involving mold transformer has been progressed and expanded by the dielectric breakdown or void due to the crack in the mold rather than a fire accident caused by a short-circuit or an overload.r an overload.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.560-565
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• 2008

$(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1112-1119
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• 2006

In this paper, mutually coupled oscillator is employed to improve phase noise. Mutually coupled structure oscillator couples two oscillator's phase shifted output signals, that is fabricated using teflon board which has dielectric constant of 2.5 and Surface Mount Gallium Arsenide FET devices. And this paper proposed the structure to bias adjustment for the phase condition of mutually couples. When one oscillator has bias point of 4.4 V and 37 mA, it's output signal has phase noise characteristic of -96.37 dBc(@9305 MHz, offset frequency 100 KHz), -73.46 dBc(10 kHz). and After it's output signal mutually coupled the other's output signal that has bias point of 8.1 V and 69 mA, it has superior phase noise characteristic of -106.7 dBc(@9305 MHz, offset frequency 100 kHz), -81 dBc(10 kHz).

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.51-59
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• 1996

A flow sensor has been fabricated by preparing thin film Pt-heater and Bi-Sb thermocouples array on 150 nm-$Si_{3}N_{4}$/300 nm-$SiO_{2}$/150 nm-$Si_{3}N_{4}$ dielectric diaphragm which has low thermal conductivity and balanced stress with silicon substrate for the purpose of improving the thermal isolation between heater and silicon substrate. Pt-heater showed nonlinear I-V characteristics due to the thermal isolation effect of the diaphragm. Its temperature coefficient of resistance was about $0.00378\;/^{\circ}C$ and Seebeck coefficient of Bi-Sb thermocouple was about $97\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and flow sensitivity increased as heater voltage increased or as the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_{2}$-flow sensitivity and thermal response time of the sensor were about $1.27\;mV{\cdot}(sccm)^{-1/2}$ and 0.13 sec., respectively.