• Journal of Welding and Joining
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• v.33 no.5
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• pp.53-60
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• 2015

Laser surface Melting Process is getting hardening layer that has enough depth of hardening layer as well as no defects by melting surface of substrate. This study used CW(Continuous Wave) Yb:YAG and STD11. Laser beam speed, power and beam interval are fixed at 70mm/sec, 2.8kW and 800um respectively. Hardness in the weld zone are equal to 400Hv regardless of melting zone, remelting zone overlapped by next beam and HAZ. Similarly, microstructures in all weld zone consist of dendrite structure that arm spacing is $3{\sim}4{\mu}m$, matrix is ${\gamma}$(Austenite) and dendrite boundary consists of ${\gamma}$ and $M_7C_3$ of eutectic phase. This microstructure crystallizes from liquid to ${\gamma}$ of primary crystal and residual liquid forms ${\gamma}$ and $M_7C_3$ of eutectic phase by eutectic reaction at $1266^{\circ}C$. After solidification is complete, primary crystal and eutectic phase remain at room temperature without phase transformation by quenching. On the other hand, microstructures of substrate consist of ferrite, fine $M_{23}C_6$ and coarse $M_7C_3$ that have 210Hv. Microstructures in the HAZ consist of fine $M_{23}C_6$ and coarse $M_7C_3$ like substrate. But, $M_{23}C_6$ increases and matrix was changed from ferrite to bainite that has hardness above 400Hv. Partial Melted Zone is formed between melting zone and HAZ. Partial Melted Zone near the melting zone consists of ${\gamma}$, $M_7C_3$ and martensite and Partial Melted Zone near the HAZ consists of eutectic phase around ${\gamma}$ and $M_7C_3$. Hardness is maximum 557Hv in the partial melted zone.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.9-15
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• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Design & Manufacturing
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• v.13 no.4
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• pp.10-16
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• 2019

Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.1
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• pp.113-119
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• 2013

Despite rapid changes in the structure of industry, manufacturing remains a key industry for economic progress, promotion of trade, increased employment, and the creation of new industries. Production technologies are essential for strengthening the competitiveness of small- and medium-sized manufacturing industries. However, it is very difficult to standardize and systematically propagate production technology from an experienced worker to an inexperienced worker because these technologies are generally improved by the skilled people in a workshop. In this study, we introduce a Web-based platform system consisting of a knowledge authoring tool, technology database, semantic database, and Web portal service for sharing production technologies for the exterior housing parts of mobile products. By investigating various cellular phone designs, reference form factors for three types of mobile phone housings were designed based on the standard features. In addition, several manufacturing technologies and considerable information such as reference mold designs and molding conditions optimized using CAE and recent R&D outputs are stored in this system.

• Science of Emotion and Sensibility
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• v.21 no.4
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• pp.63-76
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• 2018

The purpose of this study was to investigate the effect of contact type textile electrode structure on heart activity signal acquisition for smart healthcare. In this study, we devised six contact type textile electrodes whose electrode size and configuration were manipulated for measuring heart activity signals using computerized embroidery. We detected heart activity signals using a modified lead II and by attaching each textile electrode to the chest band in four healthy male subjects in a standing static posture. We measured the signals four times repeatedly for all types of electrodes. The heart activity signals were sampled at 1 kHz using a BIOPAC ECG100, and the detected original signals were filtered through a band-pass filter. To compare the performance of heart activity signal acquisition among the different structures of the textile electrodes, we conducted a qualitative analysis using signal waveform and size as parameters. In addition, we performed a quantitative analysis by calculating signal power ratio (SPR) of the heart activity signals obtained through each electrode. We analyzed differences in the performance of heart activity signal acquisition of the six electrodes by performing difference and post-hoc tests using nonparametric statistic methods on the calculated SPR. The results showed a significant difference both in terms of qualitative and quantitative aspects of heart activity signals among the tested contact type textile electrodes. Regarding the configurations of the contact type textile electrodes, the three-dimensionally inflated electrode (3DIE) was found to obtain better quality signals than the flat electrode. However, regarding the electrode size, no significant difference was found in performance of heart signal acquisition for the three electrode sizes. These results suggest that the configuration method (flat/3DIE), which is one of the two requirements of a contact type textile electrode structure for heart activity signal acquisition, has a critical effect on the performance of heart activity signal acquisition for wearable healthcare. Based on the results of this study, we plan to develop a smart clothing technology that can monitor high-quality heart activity without time and space constraints by implementing a clothing platform integrated with the textile electrode and developing a performance improvement plan.

• Reproductive and Developmental Biology
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• v.41 no.3
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• pp.57-63
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• 2017

Xenotransplantation is proposed as a solution to the problem of organ shortage. However, transplantation of xenogeneic organs induces an antigen-antibody reaction in ${\alpha}$-1,3-gal structure that are not present in humans and primates, and thus complement is also activated and organs die within minutes or hours. In this study, we used FasL gene, which is involved in the immune response of NK cell, and US11, which suppresses MHC Class I cell membrane surface expression, to inhibit cell mediated rejection in the interspecific immunity rejection, and also hDAF(CD55) was introduced to confirm the response to C3 complement. These genes were tranfeced into Korean native pig fetal fibroblasts using pCAGGS vector. And cytotoxicity of NK cell and human complement was confirmed in each cell line. The US11 inhibited the cytotoxicity of NK cell and, in addition, the simultaneous expression of US11 and Fas ligand showed excellent suppress to T-lymphocyte cytotoxicity, hDAF showed weak resistance to cytotoxicity of natural killer cell but not in CD8+ CTLs. Cytotoxicity study with human complement showed that hDAF was effective for reducing complement reaction. In this studies have demonstrated that each gene is effective in reducing immune rejection.

• Clean Technology
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• v.4 no.2
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• pp.32-40
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• 1998

The polymeric porous materials which consist of polypropylene(PP) and polyethylene(PE) powder were prepared to apply to the air purification systems by extrusion sintering method. SEM analysis showed that a composite polymeric porous structure made up of PP and PE was obtained, where PE was melted and adhered to PP because the melting temperature of PE was lower than that of PP. The filtration characteristics and mechanical properties of polymeric porous materials were investigated by varying the head die temperature of the extruder, extrusion velocity, and the melt index and quantity of PE. The filtration efficiency was proportional to the quantity of PE but inversely proportional to the melt index of PE. The polymeric porous materials composed of PP and PE, which was made by extrusion sintering method, was found to be suitable for the filter element of the air purification system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.202-207
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• 2010

In this paper, a novel voltage-controlled oscillator(VCO) using the open loop multiple split ring resonator(OLMSRR) is presented for improving the phase noise, implemented in 130 nm CMOS technology. Compared with the conventional CMOS LC resonator, the proposed CMOS OLMSRR has the larger coupling coefficient value, which makes a higher Q-factor, and has improved the phase noise of the VCO. The proposed CMOS VCO based OLMSRR has the phase noise of -99.67 dBc/Hz @ 1 MHz in the oscillation frequency. Compared with the VCO using the conventional CMOS LC resonator and the proposed VCO using the CMOS OLMSRR structure has been improved in 7 dB. The prototype 24 GHz CMOS VCO is implemented in 130 nm CMOS and occupies a compact die area of $0.7\;mm{\times}0.9\;mm$.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.6
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• pp.1412-1422
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• 1993

As a part of development of process planning system for mold die manufaturing, a software system is developed, which recognizes features and extracts parameters of the shape from design data produced by solid modeller. The recognized feature date is fed to process planning and operation planning system. Low level geometry and topology data from commercial CAD system is transformed to high level machining feature data which used to be done by using a dedicated design system. The recognition algorithm is applied to the design data with boundary representation produced by a core modeller ACIS which has object oriented open architecture and is expected to become a common core modeller of next generation CAD system. The algoritm of recognition has been formulated for 21 features on prismatic components, but the feature set can be expanded by adding rules for the additional features.