• Journal of the Korean Society for Heat Treatment
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• v.33 no.3
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.147-152
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• 2002

A new theory of thin film growth was suggested, where charged clusters of nanometer size are generated in the gas phase and are a major flux for thin films. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in metal evaporation. These results imply new insights as to the microstructure control of thin films. Based on this new understanding, the low temperature deposition of crystalline and amorphous silicon can be approached systematically.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.411-414
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• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.6
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• pp.962-967
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• 2017

The Diamond-Like-Carbon (DLC) coating is a new carbon-based amorphous material. Carbon ions in the plasma are electrically accelerated and collide with the substrate to form a thin film. This film has similar properties to diamonds such as high surface hardness, low coefficient of friction, corrosion resistance and durability that do not react with acids and bases. Also, since there is no thermal deformation, it can be printed at room temperature. and coated on almost all materials such as paper, polymer, ceramics and various metals even aspheric lens it is possible to mirror surface coating with excellent surface roughness. In this paper, we have analyzed the DLC film formed by Filtered Arc Ion Plating (Filtered AIP) process.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.139-144
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• 2013

c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.

• 한국전기화학회:학술대회논문집
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• 2000.04a
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• pp.9-9
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.78-78
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• 1998

No Abstract.see full/text

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.154.1-154
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• 1994

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.1000-1002
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• 2012

The material with superior biocompatibility and physical-chemical stability is required to fabricate high sensitive biosensors. Many kinds of biomaterials have been evaluated to apply for bioindustry. Recently, carbon based diamond and graphene thin films have been focal pointed as bio applications and their possibility is partially evaluated. Diamond thin film has many advantages for electrochemical and biological applications, such as wide potential window (3.0~3.5V), low background current and chemical-physical stability. And graphene film has many advantages as biomaterial, chemical-physical stability and conductivity. In this work, we have cultured human nerve cell (SH-SY5Y) on the nanocrystalline diamond, mirocrystalline diamond, graphene film and cell culture dish. We use MTT assay to evaluate the characteristics of cell culture on the substrates. As a result, nerve cell is well cultured on the carbon based diamond and graphene films as similar as cell culture dish. We expect that carbon materials have been applied for bioindustry such as biosensors.