• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.5
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• pp.1096-1105
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• 1994

A hypereutectic Aluminum-Silicon Alloy is widely used in the parts of automobile because of high-resistance and good strength. In this study, the cutting of hypereutectic A1-Si alloy for economical production was investigated by simulation. Tool life and the extraction rate of Si particles is inversely proportional to the depth of cut. When decreasing the depth of cut, the reduction of single crystal diamond tool cost and tool change time is achieved.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.979-985
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• 1993

Diamond films were synthesized using CH4-H2-Ar mixture gases by MWCVD, and cutting ability was tested after brazing them onto WC tools. Growth rates were in the range of 0.5~10${\mu}{\textrm}{m}$/hr depending on the deposition conditions, and diamond films with thickness of 100~300${\mu}{\textrm}{m}$ were obtained. Diamond tools brazed by RF induction method showed an enhanced cutting ability in the cutting test of Si single crystal rod.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.3
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• pp.56-62
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• 2008

The biocompatibility and the fatigue strength of Co-Cr-Mo alloy are excellent, so it is used well for the material of artificial joints. The head of artificial joint needs mirror surface for reduction of abrasive resistance. Mirror finishing of Co-Cr-Mo alloy with geometrically defined single crystal diamond cutting tools is handicapped by micro chipping of tool edge. In general, it is said that the micro chipping of diamond tool is caused by work hardening of Co-Cr-Mo alloy for the cut. In the present research, mirror finishing of Co-Cr-Mo alloy by applying ultrasonic elliptical vibration cutting was carried out. The experimental results show that the micro chipping of diamond tool was suppressed and the tool wear was remarkably reduced as compared with the ordinary diamond cutting without elliptical vibration motion. It was confirmed that the good mirror surface of maximum surface roughness of 25 nmP-V was obtained for the cutting length of about 14 m. It is expected that mirror finishing of Co-Cr-Mo alloy can be achieved by applying ultrasonic elliptical vibration cutting practically.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1995.10a
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• pp.76-81
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• 1995

MgO single crystal is widely used as a the material of high temperature resistance, but is difficult to grind because of brittleness and crack generation. Therefore, superabrasive diamond wheel is required for mirror like grinding of this material. This study describes a newly proposed optimum in-process electrolytic dressing system for carrying out effective dressing of superbrasive diamond wheel. Using this system the grinding surface of MgO single crystal was improved, the grinding force was very l9ow and crack was removed. In conclusion, this system is good to obtain the efficient grinding and mirror-like grinding without crack of MgO single crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.566-573
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• 1994

The diamond synthesis by combustion flame method is considerably affected by the substrate surface temperature and its distribution which are mainly controlled by the ratio of mixed gas, $O_2/C_2H_2$. In order to elucidate the role of gas ratio in the diamond synthetic process by combustion flame, under various gas ratios (R=0.87~0.98; R=ratio of flow-rate of $O_2/C_2H_2$ gas) the substrate temperature was measured by using thermal video system and the morphological change of diamond crystals was analysed by using SEM, Raman spectroscope, and X-ray diffraction method. With increasing the gas ratio, i.e., decreasing the hydrocarbon content, the nucleation rate of diamond crystal was lowerd. It was also found that the morphology of diamond crystals changed from the cubo-octahedron type consisting of (100), (111) plane to the octahedron type of (111) plane. The increase of the substrate temperature consistently resulted in the increase of the nucleation rate as well as the growth rate of diamond crystals in which the surface of diamond crystal dominantly consisting of (100) plane.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.159-167
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• 2022

In the past few decade years, laboratory-grown diamonds, also known as synthetic diamonds usually, have become more and more prosperous in the global diamond market. There are two main crystal growth processes of the gem-quality laboratory-grown diamond, the high pressure and high temperature (HPHT) and chemical vapor deposition (CVD). Synthetic gem diamonds grown by the HPHT press have been commercially available since the mid-1990s. Today, significant amounts of gem-quality colorless HPHT laboratory-grown diamonds have been producing for the jewelry industry. In the last several years, the CVD laboratory-grown diamonds have been gaining popularity in the market. In 2021, the CVD production rose and there are expectations that the trend would move upward continuously. This article presents information about the current status of laboratory-grown diamonds, lower cost compared to natural diamonds, market share, color distribution, spectroscopic properties of laboratory-grown diamonds, and so on.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.105-109
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• 2011

Critical angle of quartz (R.I. ${\fallingdotseq}$ 1.553) and diamond (R.I. = 2.417) are $40.09^{\circ}$ and $24.26^{\circ}$ that calculated by $sin{\theta}=r_2/r_1$ (r = refractive index, $r_1$ > $r_2$). Brilliance of quartz and diamond are 20.33% and 55.07%. The brilliance data are result of study on the incident light internal round brilliant cut quartz and diamond by the critical angle. Cause of bow-tie phenomenon can be studied by application of critical angle theory and light path inside fancy shape brilliant cut. When refractormetry with typical gem refractometer, critical angle of quartz and corundum are $59.1^{\circ}$ and $77.9^{\circ}$.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.