• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.3
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• pp.224-230
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• 2009

FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis and IC error correction, etc. Currently, FIB is not being applied to the fabrication of the micro and nano-structured mold, because of low productivity. And also sputtering rate has been required to fabricate 3D shape. In the paper, we studied the FIB-Sputtering rate according to mold materials. And surface roughness characteristics had been analysed for micro or nano mold fabrication. Si wafer, Glassy Carbon, STAVAX and DLC that have been normally considered as good micro or nano mold materials were used in the study.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Clinical and Experimental Pediatrics
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• v.50 no.2
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• pp.182-189
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• 2007

Purpose : The primary purpose of this study was to evaluate the growth and neuropsychologic function following treatments for pediatric hematologic and oncologic diseases. Healthy monozygotic twins served as ideal controls for comparison to exclude possible confounding factors. Methods : Seven children treated with various hematologic and oncologic diseases were included in the study: acute lymphoblastic leukemia (ALL; n=2), Diamond-Blackfan anemia twins (n=2), and aplastic anemia (n=3). The median age at the diagnosis was 5.2 (0.3-15) years. The median duration of follow-up was 7.2 (4.9-10) years. Controls were healthy monozygotic twins. Growth was measured and the percentile channels were evaluated sequentially for patients. The K-WISC III was applied and compared in 5 pairs of patients and controls. Results : Similar growth profiles were noted for the twins. The percentiles at diagnosis was 3-10 in 3, 25-50 in 2, and 50-75 in 2 cases. All patients stayed in their growth percentiles through follow-up, except for 1 patient who became obese. For IQ tests, the mean behavioral, verbal and full scale IQ scores of patients were 88.0, 93.8, and 89.8, respectively, and those from their corresponding controls were 92.2, 97.0, and 91.7 (P>0.05). However, 2 children who were treated for ALL had lower IQ scores. Conclusion : Similar growth profiles were observed in the monozygotic twins in terms of height and weight. The IQ scores of patients were similar to those of monozygotic twins. However, prophylactic CNS-directed therapy for leukemia might adversely affect the IQ scores. A further prospective study on larger number of twins is warranted.