• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1049-1054
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• 1999

Two-step growth method is suggested to enhance the alignment of highly oriented diamond films. (100) Si wafers are pretreated with negative biasing of - 200 V at $850^{\circ}C$ for 20 min with 4 % methane in hydrogen plasma. The pretreated wafers are grown under the lst-step growth conditions(2 % CH$_4$ in H$_2$, $810^{\circ}C$) from 2 hr to 35 hr, in order to obtain <100> textured films. The 2nd-step growth(2 % CH$_4$ in H$_2$, $850^{\circ}C$) is carried out to make diamond films having (100) growth planes, which are parallel to the substrate. The alignment of the films after the 1st-step growth, has been analyzed by {111} X-ray pole figure, which is improved abruptly with increasing film thickness. However, the pyramidal surface morphology is inevitable. These morphology is flattened after the 2nd-step growth by developing the (100) facets parallel to the substrate. The alignment of the highly oriented textured films after the two-step growth depends on the thickness of the 1st-step growth film.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.194-200
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• 2001

In this study, the optical properties of diamond-like carbon(DLC) films, which was synthesized by 13.56 MHz rf plasma enhanced chemical vapor deposition system(PECVD), were investigated. We observed the variation of the transmittance and optical band gap with respect to deposition condition. The change of the transmittance and optical band gap of the DLC films were investigated as a function of RF power, working pressure, and additional gas. The optical band gap decreased with the increase of RF power and working pressure. We could verify the bond structures change of DLC films by observing the content of hydrogen using FT-IR spectroscopy. And the addition of hydrogen and nitrogen decreased the optical band gap by the breakage of C-H bond of DLC films during the deposition.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.4
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• pp.392-397
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• 2014

Recently, there is an increase in the need for precision linear stages with vacuum compatibility in such areas as lithography equipment for wafer or mask manufacturing, mask mastering equipment for optical data storage and electron beam equipment. A simple design, high stiffness and low cost can be achieved by using ball bearings. However, a ball bearing have friction and wear problems just as in ambient air. In order to decrease the friction, a special finish, a diamond-like carbon (DLC) film coating, is applied to the surface of a guide rail by sputtering deposition. This paper presents the result of an experimental investigation on the control performance of a ball bearing-guided linear motion stage under two environmental conditions: in air and vacuum. A comparison between the results with and without the DLC coating was also considered in the experimental investigation.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1490-1492
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• 1994

Diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPECVD at the condition of power of 800W, pressure of 80torr, $H_2$ flow rate of $75{\sim}81sccm$, $O_2$ flow rate of $0{\sim}3.8sccm$, $CH_4$ flow rate of $4.8{\sim}9sccm$, substrate temp, of $950{\sim}1010^{\circ}C$ and deposition time of 5hr. The deposited films were characterized by SEM, XRD and Raman spectroscopy. The growth rates of thin films and particles was measured. Good quality were synthesized at 40% of oxygen concentration which 6% of fixed metane concentration, and at 50%. Its deposition rates were $2.4{\mu}m/h$ respectively. As oxygen concentration increased, it was known that the broad peak of $1350 cm^{-1}$ was shifted to $1332cm^{-1}$ due to etching of carbon component.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.317-324
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• 2019

Cr-diamond-like carbon (Cr-DLC) films were deposited using a hybrid method involving both physical vapor deposition and plasma-enhanced chemical vapor deposition. DLC sputtering was carried out using argon and acetylene gases. With an increase in the DC power, the Cr content increased from 14.7 to 29.7 at%. The Cr-C bond appeared when the Cr content was 17.6 at% or more. At a Cr content of 17.6 at%, the films showed an electrical conductivity of > 363 S/cm. The current density was 9.12 × 10^-2 ㎂/㎠, and the corrosion potential was 0.240 V. Therefore, a Cr content of 17.6 at% was found to be optimum for the deposition of the Cr-DLC thin films. The Cr-DLC thin films developed in this study showed high conductivity and corrosion resistance, and hence, are suitable for applications in separators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.301-301
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• 2008

Ion beam (IB)-induced alignment of inorganic materials has been investigated intensively as it provides controllability in a nonstop process for producing high-resolution displays[1][2]. LC orientation via ion-beam (IB) irradiation on the nitrogen doped diamond like carbon (NDLC) thin film deposited by physical deposition method-sputtering was embodied. The NDLC thin film that was deposited by sputter showed uniform LC alignment at the 1200eV of the ion beam intensity. The pretilt angle of LC on NDLC thin films was measured with various IB exposure time and angle. The maximum pretilt angle were showed with IB irradiation angle of $45^{\circ}$ and exposure time of 62.5 sec, respectively. To show NDLC thin film stability in high temperature, thermal stability test was proceeded. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$. In this investigation, the electro-optical (EO) characteristics of LC on NDLC thin film were measured.

• Transactions of the Society of Information Storage Systems
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• v.5 no.2
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• pp.82-88
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• 2009

Understanding the adhesion behavior and characteristics of toner film is required to achieve image and text printing with high quality resolution. Toner can be considered as a thin film coating on a media such as paper or polymer film. Quantitative measurement of adhesion characteristics of the thin film is important to assess the reliability of the system. In this work the main objective was to investigate the adhesion characteristic between the toner and the media by ramp loading scratch test method. The scratch test may be used to obtain quantitative information about the adhesion of the film to the substrate. In the scratch test a diamond tip was used to scratch the surface of the toner film under an increasing normal load until the toner detached or fractured. The critical load (LC) was obtained from the experimental results. Also, the relationship between the critical load and the adhesive strength of the interface between the substrate and the toner was obtained by measuring the normal and tangential forces during the scratch test. Finally, theoretical analysis of the toner scratch characteristics was performed based on Benjamin and Weaver theory, Plowing model, and Laugier model.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1511-1513
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• 1999

In order to investigate the properties of diamond-like carbon(DLC) thin films depending on the deposition parameters, DLC thin films were systematically fabricated by pulsed laser deposition (PLD), DLC thin films have been shown advantageous field emission properties due to a negative electron affinity (NEA) and a low work function. At the atomic level. DLC is referred to the group of carbon materials with strong chemical bonding composition of $sp^2$ and $sp^3$ arrangements of atoms incorporated with an amorphous structure. The experiment was performed at substrate temperature in the range of room temperature to $600^{\circ}C$. The laser energy densiy was used to be in the range of $6J/cm^2$ to $20J/cm^2$, SEM, Raman, PL, XPS and field emission characteristics were used to investigate the DLC thin films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.214-214
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• 2013

Diamond like carbon(DLC) 박막은 고경도, 저마찰, 내스크래치 특성을 요구하는 표면기술 응용분야에 널리 사용되며, 대면적 저가 코팅 방법 개발 및 물성 조절 기술이 요구된다. 본 연구에서는 Filtered Vacuum Arc (FVA)를 통해 증착되는 Hydrogen-free DLC 박막의 밀착력 제어를 위한 증착시 기판 전압에 따른 증착 및 밀착력 특성을 분석하였다. 기판전압이 0~-150 V 까지 변화함에 따른 스크래치 테스트 결과를 통해 최적 증착 조건을 도출하였다.