• Title/Summary/Keyword: Diamond film

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Fabrication of Micro Diamond Tip Cantilever for AFM and its Applications (AFM 부착형 초미세 다이아몬드 팁 켄틸레버의 제작 및 응용)

  • Park J.W.;Lee D.W.
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2005.05a
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    • pp.395-400
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    • 2005
  • Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

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Fabrication of Micro Diamond Tip Cantilever for AFM-based Tribo-Nanolithography (AFM 기반 Tribo-Nanolithography 를 위한 초미세 다이아몬드 팁 켄틸레버의 제작)

  • Park Jeong-Woo;Lee Deug-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.8 s.185
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    • pp.39-46
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    • 2006
  • Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

  • Han, Sang-Bo
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.983-989
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    • 2012
  • The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

FIELD EMISSION CHARACTERISTICS OF DIAMOND FILMS

  • Park, Kyung-Ho;Lee, Soon-Il;Koh, Ken-Ha;Park, Jung-Il;Park, Kwang-Ja
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.505-511
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    • 1996
  • The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

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A Study on the Characteristics of Nanodiamond Films with the Gas Flow Control (가스 유량제어에 의한 나노다이아몬드 박막의 특성연구)

  • Kim, Tae-Gyu;Kim, Chang-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.39 no.4
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    • pp.153-159
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    • 2006
  • Nanodiamond films were deposited on Si substrate by introducing a time dependent on/off modulation of $CH_4\;and\;O_2$ flows in a vertical-type microwave plasma enhanced chemical vapor deposition system. Surface morphology and diamond quality of the film were investigated as a function of the on/off modulation time interval. The diamond nucleation density on the substrate was enhanced under low temperature and low pressure condition. In addition, the diamond nucleation density was enhanced by increasing the on/off modulation time interval. Enhanced diamond quality was noticeable under the condition of a longer on/off modulation time interval. It was suggested that the nanodiamond nuclei formed the cluster formation.