• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권2호
• /
• pp.49-56
• /
• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.611-614
• /
• 2003

The electrochemical oxidation of ascorbic acid(AA), serotonin(SE) and epinephrine(EP) have been performed at poly N,N-dimethylaniline(PDMA) film coated diamond electrode. This cationic polymer film is electrochemically deposited on boron-doped diamond electrode surface. Unlike the bard electrode, the polymer film-coated diamond electrode can well separate the oxidation potential of AA by 200mV. Thus this electrode can be successfully used for the simultaneoud detection of both species. Increases in the concentration of AA do not affect the reponse of EP and SE.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.930-933
• /
• 2003

The electrochemical oxidation of ascorbic acid(AA), serotonin(StT) and epinephrine(EP) have been performed ae poly N,N-dimethylanliline(PDMA) film coated diamond electrode. This cationic polymer film is electrochemically deposited on boron-doped diamond electrode surface. Unlike the bard electrode, the polyaer film-coated diamond electrode can well separate the oxidation potential of AA by 330mV. Thus this electrode can be successfully used for the simultaneoud detection of both species. Increases in the concentration of AA donot affect the reponse of EP and ST.

• Journal of Korean Vacuum Science & Technology
• /
• 제4권1호
• /
• pp.18-22
• /
• 2000

For the enhancement of the nucleation density of the diamond film, we introduced the cyclic process. The cyclic process was carried out by the on/off control of CH$_4$ flow rate for a relatively short time (10 min), compared with the total reaction time (6 h). Prior to depositing the diamond film, we made the pretreated glass substrate via the unidirectional scratch using ∼l $\mu\textrm{m}$ size diamond powders. Diamond films were deposited on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We observed the enhancement of the nucleation density of the diamond films caused by the cyclic process. Detailed surface morphologies of the substrate were investigated after the cyclic process. Based on these results, we discussed the cause for the enhancement of the nucleation density on the pretreated glass substrate by the cyclic process.

• 한국표면공학회지
• /
• 제28권3호
• /
• pp.133-141
• /
• 1995

The deposition characteristics of diamond films were investigated for three different substrates : Si, Inconel 600 and steel. Diamond films were prepared by microwave plasma CVD method using $CH_4$, $H_2$ and $O_2$ as reaction gases. The deposited films were analyzed with SEM, Raman spectroscopy and ellipsometer. For Si substrate, diamond films were successfully obtained for most of the deposition conditions used in this study. As the $CH_4$ flow rate decreased and the $O_2$ flow rate increased, the quality of the film was improved due to the reduced non-diamond phase in the film. For Inconel 600 substrate, the surface pretreatment with diamond powders was required to deposit a continuous diamond film. The films deposited at temperatures of $600^{\circ}C$ and $700^{\circ}C$ had mainly diamond phase, but they were peeled off locally due to the difference in the thermal expansion coefficient between the substrate and the deposited films. The films deposited at $500^{\circ}C$ and $850^{\circ}C$ had only the graphitic carbon phase. For steel substrate, all of the films deposited had only the graphitie carbon phase. We speculated that the formation of diamond nuclei on the steel substrate was inhibited due to the diffusion of carbon atoms into the steel substrate which has a large amount of carbon solubility.

• 전자공학회논문지T
• /
• 제36T권3호
• /
• pp.13-18
• /
• 1999

다이아몬드 박막은 RF PACVD법에 의해 수소와 메탄으로부터 실리콘 웨이퍼 상에 성장되어졌다. 박막 성장 전에 표면의 핵생성 밀도를 증가시키기 위하여 1㎛의 다이아몬드 페이스트로 기계적 흡집을 내어 사용하였다. 메탄 농도를 변화시켜 제작한 박막에 대한 평가는 XRD, SEM 및 Raman Spectroscopy에 의해 이루어졌다. 성장된 박막의 결정성은 메탄 농도가 낮을수록 증가되었다.

• 한국전기전자재료학회논문지
• /
• 제16권3호
• /
• pp.214-218
• /
• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a diamond like carbon (DLC) thin film surface A good LC alignment by UV exposure on the DLC thin film surface at 200${\AA}$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the DLC thin film surface was observed at annealing temperature of 180$^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of 200$^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method o the DLC thin film surface can be achieved.

• 한국전기전자재료학회논문지
• /
• 제15권5호
• /
• pp.419-422
• /
• 2002

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a diamond like carbon (DLC) thin film. A high pretilt angle of about $3.5^{\circ}$ by ion beam(IB) exposure on the DLC thin film surface was measured. A good LC alignment by the IB alignment method on the DLC thin film surface was observed at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $220^{\circ}C$. Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the DLC thin film surface can be achieved.

• 한국진공학회지
• /
• 제12권1호
• /
• pp.25-34
• /
• 2003

탄소 원자 간의 interaction potential로서 Tersoff에 의해 제안된 반 경험적인 potential을 이용하여 고경질 탄소박막의 합성 거동을 전산 모사하였다. 고에너지의 탄소익사를 diamond (100) 표면에 충돌시켜 고밀도의 비정질 탄소박막을 만들 수 있었으며, 전산모사에 의해 합성된 탄소 박막의 물성과 Shin 등이 발표한 filtered cathodic arc 공정에 의해 합성된 탄소의 물성을 비교하였다. ta-C 합성 실험에서 관찰된 바와 같이 최적의 에너지 영역에서 다이아몬드에 가장 유사한 물성의 필름이 합성되었으며, 이때의 입사원자 에너지인 50 eV 는 실험적으로 최적의 필름이 얻어지는 조건에서의 탄소이온 에너지와 유사하였다. 전산모사에 의해 합성된 박막은 비정질이었으며, 다이아몬드 lattice에 해당하는 short range order를 가지긴 있었다. 그러나, 최적의 에너지 조건에서는 2.1 $\AA$의 거리의 준안정 site에 탄소들이 많이 존재하는 것을 알 수 있었는데, 이는 필름 표면의 국부적 급냉효과가 최대가 되는 조건과 일치하였다. 이러한 결과는 다이아몬드상 카본필름의 합성에 있어서, 고 에너지의 탄소인자가 충돌하면서 발생하는 국소적인 열에너지의 증가가 가장 빨리 제거되는 조건에서 최적의 물성을 가지는 경질탄소 필름이 형성되는 것을 보여주고 있다.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2001년도 Proceedings of 6th International Joint Symposium on Microeletronics and Packaging
• /
• pp.49-56
• /
• 2001