• 제목/요약/키워드: Device to Device Integration

검색결과 434건 처리시간 0.046초

바이모달트램 차량인프라시스템에 관한 연구 (Study on Vehicle Infra System of Bimodal Tram)

  • 이강원;윤희택;박영곤;황의경
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2011년도 정기총회 및 추계학술대회 논문집
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    • pp.2147-2152
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    • 2011
  • This study of bimodal integration management system in conjunction with the tram and the tram cars bimodal integrated management system that occupies a part of the system to perform its role as a bimodal tram vehicle configuration, a device for the vehicle's infrastructure ryureul development and it is aimed to build on the vehicle. Bimodal tram vehicle infrastructure systems, internal and external information of the larger vehicles, and vehicles used to collect information for its own part and the integrated operations management center, or providing partial information from the station and collect/provide for the transfer of information to the communication part consists In this study, the core of these devices, the configuration of the vehicle infrastructure systems for the overall management and control of vehicles operating a computer's central processing device, vehicle infrastructure systems that make it manages and stores all jangchiryu Integrated Operations Management Center is reporting. In addition, seamless integration with operational management center for interactive communication in a vehicle mounted communications devices to maintain the best condition to manage. Current general traffic management system in a similar terminal device being used, but bimodal tram vehicles operating the computer of the vehicle operates the infrastructure to configure the devices around the one to configure the system in terms of step enhanced the active type, the operating terminal unit of inter active type. In this study, considering the future alignment of the accounting fee system, the expansion of the system reliability and stability around the activities that are underway.

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Through Silicon Stack (TSS) Assembly for Wide IO Memory to Logic Devices Integration and Its Signal Integrity Challenges

  • Shin, Jaemin;Kim, Dong Wook
    • 한국전자파학회지:전자파기술
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    • 제24권2호
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    • pp.51-57
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    • 2013
  • The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

N-Type Carbon-Nanotube MOSFET Device Profile Optimization for Very Large Scale Integration

  • Sun, Yanan;Kursun, Volkan
    • Transactions on Electrical and Electronic Materials
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    • 제12권2호
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    • pp.43-50
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    • 2011
  • Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

Collective laser-assisted bonding process for 3D TSV integration with NCP

  • Braganca, Wagno Alves Junior;Eom, Yong-Sung;Jang, Keon-Soo;Moon, Seok Hwan;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
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    • 제41권3호
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    • pp.396-407
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    • 2019
  • Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

면진장치를 가지는 구조물의 등가점성감쇠비 산정 (Estimation of Equivalent Viscous Damping of Structure with Base Isolation Devices)

  • 김태호;이동근
    • 한국지진공학회:학술대회논문집
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    • 한국지진공학회 2002년도 춘계 학술발표회 논문집
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    • pp.359-366
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    • 2002
  • Direct Integration method(D.I) and Mode Superposition method(M.S) are used widely in dynamic analysis method for structure with isolation devices. D.I is used firstly because it is consider to nonlinearity of isolation device. M.S is applied in elastic region, but it is difficult to apply M.S because coincidence with othogonality condition in the case of adding the damping of isolation device. In this study, the method for calculation of damping ratio of isolated structure is proposed, and proposed method is verified with analysis for example structure.

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칩상호 광접속용 GaAs 광전집적회로의 기본 공정 II (LD 구조 ; 집적화 연구) (GaAs OEIC Unit Processes for chip-to-chip Interconnection II (LD structure ; integration))

  • 김창남
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.185-192
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    • 1989
  • It is shown that GaAs/GaAs stripe Roof-Top-Reflector LD is better than cleaved mirror LD by numerical analysis. And surface light emitting device is developed by LPE melt-back growth, which is of good controllability for OEIC. OEIC transmitter using RTR LD structured device and FET has been made and modulated, expected to show good modulation characteristics after solving process problem. Beam-Lead LD mounted on Si carrier has been made and shows low heat-resistance and so long life and good characteristics of LD.

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PBLG와 PBDG의 상전이와 전기특성에 관한 연구 (A Study on the Phase Transfer and Electrical Properties of PBLG and PBDG)

  • 김병근;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.400-403
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    • 2003
  • Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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유무선통합화재감지시스템 성능에 관한 연구 (A Study on Performance of the Wire/Wireless Integration Fire Detection System)

  • 정종진;사공성호
    • 한국화재소방학회논문지
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    • 제24권2호
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    • pp.178-184
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    • 2010
  • 본 연구에서는 화재로 인하여 발생되는 연기 또는 열을 무선화재감지기에서 감지하여, 유선이 아닌 무선장치를 이용하여 수신장치까지 전송하고, 이 감지신호를 유선을 통하여 메인서버로 전송하는 유무선통합감지시스템을 제안한다. 또한 무선 열/연감지기, 무선모듈, 펌웨어, 유무선통합수신반 등을 개발하였으며, 유무선장치의 성능과 실용성에 관한 검증을 위하여 송신탑, 주상복합건물, 지하철역사 등에서 실제 현장적용 실험을 수행하였다. 실험결과, 제안한 시스템은 모든 실험대상물에서 정상적으로 동작하였으며 향후 현장적용이 가능함을 확인할 수 있었다.

네트워크 기반 제어를 위한 LonWorks/IP 라우터의 설계 및 구현 (Design and Implementation of LonWorks/IP Router for Network-based Control)

  • 현진욱;최기상;최기흥
    • 전자공학회논문지SC
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    • 제44권4호통권316호
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    • pp.79-88
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    • 2007
  • 산업계에서 디바이스 제어 네트워크에 접속을 위한 기술과 인터넷을 통한 빌딩 자동화 시스템에 접속을 위한 기술의 수요가 커지고 있다. 이러한 기술에서는 디바이스 제어 네트워크와 인터넷 같은 데이터 네트워크의 통합과 광역 분산제어 시스템으로 조직화하느 것이 필요하며, 이는 VDN(virtual device network)라는 구조 하에서 실현될 수 있다 [1,2]. 디바이스 제어 네트워크와 데이터 네트워크의 내역은 그 응용의 차이 때문에 아주 다르다. 따라서 VDN의 구현을 위하여는 디바이스 제어 네트워크와 데이터 네트워크 간에 통신 프로토콜을 번역하고, 목적지로 정보를 효과적으로 송신할 수 있는 라우터가 필요하다. 이 논문은 VDN에 기반한 NCS(networked control system)의 개념을 제안하고 임베디드 시스템[3]을 이용하는 라우팅 알고리듬을 제안한다.

Skin-interfaced Wearable Biosensors: A Mini-Review

  • Kim, Taehwan;Park, Inkyu
    • 센서학회지
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    • 제31권2호
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    • pp.71-78
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    • 2022
  • Wearable devices have the potential to revolutionize future medical diagnostics and personal healthcare. The integration of biosensors into scalable form factors allow continuous and noninvasive monitoring of key biomarkers and various physiological indicators. However, conventional wearable devices have critical limitations owing to their rigid and obtrusive interfaces. Recent developments in functional biocompatible materials, micro/nanofabrication methods, multimodal sensor mechanisms, and device integration technologies have provided the foundation for novel skin-interfaced bioelectronics for advanced and user-friendly wearable devices. Nonetheless, it is a great challenge to satisfy a wide range of design parameters in fabricating an authentic skin-interfaced device while maintaining its edge over conventional devices. This review highlights recent advances in skin-compatible materials, biosensor performance, and energy-harvesting methods that shed light on the future of wearable devices for digital health and personalized medicine.