• Journal of Aerospace System Engineering
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• v.14 no.2
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• pp.12-19
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• 2020

In Korea, the regulation is MOLIT Notice 2018-290, Guidance for Approval of Synthetic Flight Trainer as Flight Simulator and Flight Training Device. The FAA (Federal Aviation Administration) categorizes FSTD (Flight Simulation Training Device) into FFS (Full Flight Simulator) and FTD (Flight Training Device), according to its level. Additional categories for regulation are airplane and helicopter, depending on the type of aircraft. In this study, the objective tests for the handling quality of the FAA and Korean regulations were compared and analyzed. In QPS (Qualification Performance Standard), related test titles, flight conditions, and tolerance limits were analyzed for the handling quality. Based on this study, recommendations on amendments to the regulation was presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.55-58
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• 2000

SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.131-135
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• 2021

Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

• The Journal of the Convergence on Culture Technology
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• v.8 no.3
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• pp.477-483
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• 2022

A flight simulator is a device that allows pilots attain proficiency of various situations and a sense of flight, and as interest in scientific training increases in modern aviation, aviation training organization develop and operate simulators. Therefore, in this study, the process of developing a motion-based helicopter simulation Training Device using a commercial program. Citing previous studies, the specificity of helicopter flight education and the positive effect of motion simulators were confirmed. In addition, the design and program of the motion device were studied in the process of checking the configuration and current regulations of flight simulation training devices and developing a helicopter motion simulator. A motion program was set based on the system design and structural design of the flight simulator, and data received from the flight simulator was identified to confirm the expected operating shape. Through this study, we intend to create a positive expected effect on pilot training by completing a motion-based helicopter simulator.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.4
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• pp.229-239
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• 2013

Recently, device-to-device (D2D) communications have been highlighted to improve the spectral efficiency and offer various user experiences in cellular networks. In this paper, we survey standards and literatures related to the D2D technology and address various advantages of D2D technology, and the problems to be resolved before practically implemented. Especially, by considering an important interference issue between cellular and D2D links, five resource allocation and interference management scenarios are provided and their performances are evaluated through the system level simulations. The simulation results show that the use of D2D significantly improve the cell capacity and the D2D user rate due to the effects of frequency reuse and data off-loading. Notably, it is also shown that an optimal D2D communication range exists to maximize the system performance.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• Journal of the Society of Disaster Information
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• v.16 no.4
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• pp.824-831
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• 2020

Purpose: In fire case, nursing hospitals are subject to considerable restrictions on evacuation due to the characteristics of occupants and vulnerable elements of buildings, it is important to make evacuation device for vulunerabale person, and need how to intend to increase the efficiency of evacuation by fire and evacuation simulation with helper Method: The smoke characteristics were analyzed by time through fire simulation, finally, the number of helpers according to the day and night was entered, and the evacuation completion time was compared and analyzed using the evacuation simulation. Result: It was found that the evacuation time was shortened by more than 20% when the evacuation assistance device was used for the vulnerable, and the evacuation time was delayed by almost 70% in case of a fire at night compared to the daytime. Conclusion: If the horizontal and vertical evacuation device are effectively utilized in actual fire situations, a strategy appropriate to the situation is deemed necessary. It is expected that evacuation efficiency will increase based on the use of horizontal evacuation evacuation device and vertical evacuation device by developing evacuation manuals