• Asian Pacific Journal of Cancer Prevention
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• 제14권7호
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• pp.4077-4082
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• 2013

The purpose of this descriptive and comparative study was to examine gender differences relevant to pain intensity, opioid prescription patterns and opioid consumption in Taiwanese oncology outpatients. The 92 participants had been prescribed opioid analgesics for cancer-related pain at least once in the past week and were asked to complete the Brief Pain Inventory - Chinese questionnaire and to recall the dosage of each opioid analgesic that they had ingested within the previous 24 hours. For opioid prescriptions and consumption, all analgesics were converted to morphine equivalents. The results revealed a significant difference between males and female minimum pain thresholds (t = 2.38, p = 0.02) and current pain thresholds (t = 2.12, p = 0.04), with males reporting a higher intensity of pain than females. In addition, this study found that males tended to use prescribed opioid analgesics more frequently than females on the bases of both around the clock (ATC) (t = 1.90, p = 0.06) and ATC plus as needed (ATC + PRN) (t = 2.33, p = 0.02). However, there was no difference between males and females in opioid prescriptions on an ATC basis (t = 0.52, p = 0.60) or at an ATC + PRN basis (t = 0.40, p = 0.69). The results suggest that there may be a gender bias in the treatment of cancer pain, supporting the proposal of routine examination of the effect of gender on cancer pain management. These findings suggest that clinicians should be particularly aware of potential gender differences during pain monitoring and the consumption of prescribed opioid analgesics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 센서학회지
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• 제17권6호
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• Allergy, Asthma & Immunology Research
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• 제10권6호
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• pp.662-674
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• 2018

Purpose: Group 2 innate lymphoid cells (ILC2s) have been implicated in the pathogenesis of allergic disease. However, the effect of allergen-specific immunotherapy (AIT) on ILCs remains to be clarified. The aim of this study was to evaluate the levels of ILC subsets in allergic rhinitis (AR) patients in response to house dust mite (HDM)-specific immunotherapy. Methods: We enrolled 37 AR patients undergoing AIT (16 responders and 11 non-responders) for 2 years, 35 HDM AR patients and 28 healthy subjects. Peripheral blood mononuclear cells (PBMCs) were analyzed by flow cytometry to identify ILC subsets. Stimulation of ILC2s with recombinant allergen-specific protein was used to determine ILC2's activation (CD69 expression). Results: Responder AIT patients and healthy subjects had a decreased frequency of circulating ILC2s compared to non-responder AIT and AR patients. Conversely, ILC1s from responder AIT patients and healthy subjects showed increased frequency compared to non-responder AIT and AR patients. The frequency of ILC3s natural cytotoxicity receptor $(NCR)^+$ and $NCR^-$ in responder AIT patients was significantly lower compared to AR patients and healthy subjects. The ILC1: ILC2 proportion in responder AIT patients was similar to that of healthy subjects. PBMCs from patients who were responders to AIT had a significantly lower expression of the activation marker CD69 on ILC2s in response to allergen re-stimulation compared to AR patients, but no difference compared to non-responder AIT patients and healthy subjects. Conclusions: We propose that AIT might affect ILC responses. The activation of ILC2s was reduced in AR patients treated with AIT. Our results indicate that a relative ILC1/ILC2 skewed response is a possible key to successful AIT.

• 대한화학회지
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• 제37권3호
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• pp.351-354
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• 1993

Z-1-에칠-2-니트로-1-부텐일-(4'-메칠)-페닐 슬폰, C$_{13}$H$_{17}$NO$_4$S의 분자량은 283.4으로 a = 12.194(7), b = 7.290(4), c = 16.532(14)${\AA}$, ${\beta}$ = 103.4(2)$^{\circ}$, V = 1429.5 ${\AA}^3$, Z = 4, D$_c$ = 1.32 gcm$^{-3}$, ${\lambda}$(Mo K${\alpha}$) = 0.71069 ${\AA}$, ${\mu}$ = 2.2 cm$^{-1}$, F(000) = 600, T = 298 K으로 단사정계에 계속하여 P2$_1$/c의 공간군을 갖으며 1762rodml I > 1.0${\sigma}$(I)인 회절반점에 대하여 R=0.050이었다. 분자는 메칠벤젠고리에 결합된 S 원자와 NO$_2$기에 결합된 "치환된 부텐골격", C-C(S)=C(NO$_2$)-C으로 이뤄진 cis-형의 분자구조를 갖고 있다. 메칠벤젠고리와 치환된 부텐부분은 거의 평면으로 되어 있으며 그들 자신의 분자평면으로 부터의 각각의 최대편차는 벤젠기의 C(1) 원자의 0.018${\AA}$와 NO$_2$기의 N 원자의 0.045${\AA}$이다. 부텐골격의 평면은 메칠벤젠의 평면과 88.5$^{\circ}$를 또 NO$_2$기와의 평면은 78.6$^{\circ}$를 이루고 있다. 부텐평면으로부터의 NO$_2$기의 회전은 NO$_2$기가 가지고 있는 공명구조의 기여도를 감소하여 SO$_2$기의 O(2) 원자와 NO$_2$기의 O(3) 원자 사이에서 일어나는 반발로 그 거리가 2.8${\AA}$의 예상된 van der vaals 거리보다 긴 2.894 ${\AA}$로 되어 있다.

• 한국태양에너지학회 논문집
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• 제25권4호
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.14-18
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• 1997

Sulconazole nitrate, C18H16Cl3N3O3S, crystallizes in monoclinic, space group C2/c, with a=14.401(1), b=8.051(1), c=34.861(2) Å, β=95.9(1)°, g=0.58 mm-1, Dc=1.523 g/cm3, Dm=1.522 g/cm3, F(000)=1888.0, and z=8. Intensities for 2460 unique reflections were measured on a CAD4 diffractometer with graphited-monochromated Mo-Kα radiation. The structure was solved by direct method and refined by full matrix least squares to a final R=0.071 for 2182 reflections (Io > 2σIo). The bond lengths and angles are comparable with the values found in the analogues imidazole derivatives. The 2,4-dichlorophenyl ring(A) and the p-chlorophenyl ring(B) are almost planar with different heights [dihedral angle 17.3°] while the imidazole ring(C) is nearly perpendicular to the two phenyl rings[dihedral angles about the two rings A, B are 110.8° and 96.1° respectively]. In order to understand the overall conformation we calculated the selected distances (l1, l2, l3) among the center of the three rings and considered the imaginary plan D[C(7), C(9) and C(16)]. The two polar group S(8) and N(19) do not have gauche conformation and l2 value (4.47 Å) is shorter than the other imidazole derivatives. One -NO3 group are hydrogen bonded the two neighbored sulconazole molecules. The molecular crystal packing is also formed by two hydrogen bondings and van der Waals forces.

• 한국광물학회지
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• 제30권2호
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• pp.45-57
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• 2017

$Cd^{2+}$ 이온으로 교환된 제올라이트 Y 단결정은 294 K에서 ${\mid}Na_{75}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$ ($Na_{75}-Y$, Si/Al=1.56)에 0.05 M인 $Cd(NO_3)_2$(pH = 3.65)수용액으로 교환하여 723 K에서 진공 탈수를 통해 준비하였고(crystal 1) 두 번째 결정은 첫 번째 결정과 같이 준비한 뒤 294 K에서 건조된 벤젠을 72시간 동안 노출시켜 준비했다(crystal 2). 이들의 구조는 싱크로트론 X-선을 이용하여 결정학적으로 확인하였고 $F_o$>$4{\sigma}(F_o)$를 사용하여 최종 오차 인자를 각각 $R_1/wR_2=0.040/0.121$ 그리고 0.052/0.168로 정밀화하였다. Crystal $1({\mid}Cd_{36}H_3{\mid}[Si_{117}Al_{75}O_{384}]-FAU)$에서 $Cd^{2+}$이온은 주로 site I과 site IIa에 점유되어 있었고, 이와 더불어 site I', II' 그리고 site IIb에도 $Cd^{2+}$ 이온이 점유되어졌다. Crystal $2({\mid}Cd_{35}(C_6H_6)_{24}H_5{\mid}[Si_{117}Al_{75}O_{384}]-FAU)$에서 $Cd^{2+}$ 이온은 다섯 개의 결정학적 자리에 점유되었다. 24개의 벤젠분자는 supercage 내부에서 두 개의 뚜렷한 자리에서 발견 되었다. 17개의 벤젠분자는 site IIa에 있는 $Cd^{2+}$ 이온과 면상에서 서로 상호작용하였고 supercage 안에서 3회 회전축 상에서 발견되었다. 나머지 7개의 벤젠분자는 12-ring 면상에서 골격(framework)산소들과 함께 약한 다수의 정전기적인 작용과 van der Waals 상호작용으로 안정화되어 있었다.

• Biotechnology and Bioprocess Engineering:BBE
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• 제9권5호
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• pp.369-373
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• 2004

In order to elucidate the possibility of artificial production of p. ferulae by solid-state culture, the optimization of culture conditions was carried out. When $NH_4H_2PO_4$ and $CaCO_3$ were used in the cultures using test tube with 30 g of Populus sawdust at $25^{\circ}C{\pm}1$ in the dark, the favored mycelial growth was observed with $1\%$ of $NH_4H_2PO_4$ and the production of polysaccharide was 7.85 mg/100 mg of mycelium with $1\%$ of $CaCO_3$. The mixtures of $80\%$ of Populus Sawdust and $20\%$ of rice bran at $60\%$ of water content were determined to be optimal for the production of fruiting bodies in the sawdust culture. When three treatments containing various ratios of garlic powder were conducted, yields of fruiting bodies were drasti[ally higher than those of Synthetic mixture without garlic powder The highest yield (143 g/bag) was obtained with $7\%$ garlic powder. The yield of synthetic mixture containing $7\%$ of garlic powder was $83\%$ higher than that of Sawdust culture. The reason why garlic powder did support growth was not clear but it is possible that garlic powder might contain effective components for the formation of fruiting body. The optimal synthetic mixture composition consisted of cotton seed $77\%$, lime $6.4\%,\;K_2HPO_4\;0.2\%,\;KH_2PO_4\;0.2\%,\;CaHPO_4\;0.2\%$, corn flour $4\%$, wheat flour $5\%$, and garlic pow-der $7\%$.