• 대한기계학회논문집B
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• 제20권11호
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• pp.3695-3705
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• 1996

We designed the hot wind tunnel to reproduce the conditions of utility boiler and carried out its performance test, in order to investigate the particulate two-phase flow behaviour, the fouling and heat transfer characteristics to the heat exchanger. The hot wind tunnel introduces the control system to control the temperature in the test section. The particle is injected into the hot gas stream. The fouling probe (cylindrical tube) is positioned normal to the particulate gas-particle two-phase flow and cooled by the air. The temperature of gas and cooling air, and temperature in the fouling probe are measured as a function of time, giving the local and averaged heat transfer and fouling factor. The shape of particulate deposition adhered to the fouling probe is also observed.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 춘계학술대회논문집 - 한국공작기계학회
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• pp.579-584
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• 2000

Single crystal silicon (SCS) is used in a variety of microsensor applications in which stresses and other mechanical effects may dominate device performance. The authers model temperature dependent mechnical properties during focused io beam(FIB) cutting and Pt deposition processes. In microaccelero-meter manufacturing process, this paper intend to find thermal displacement change of the temperature by tunnel gap, additional beam part and pt deposition. The thermal analysis intend to use ANSYS V5.5.3.

• Journal of Astronomy and Space Sciences
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• 제21권4호
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• pp.481-492
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• 2004

Nb/Al Superconducting Tunnel Junction(STJ) 소자를 제작하여 I-V 특성곡선을 측정하고 제작된 STJ 소자의 초전도체 특성 및 성능 파라미터 값들을 구하였다. 크기가 각각 20, 40, 60, 그리고 $80{\mu}m$인 4종류의 STJ소자를 제작하였으며 각 소자는 총 5층의 Nb/A1/AlOx/Al/Nb 다결정(polycrystalline) 박막으로 구성된 SIS(Superconductor Insulate. Superconductor) 방식의 조셉슨 접합 구조를 갖는다. 이 연구에서 제작한 STJ 소자는 $Tanner^{TM}$ L-Edit 8.3 프로그램으로 설계하였으며 한국표준과학연구원의 SQUID 제조실험실에서 제작하였다. 5층의 STJ 박막은 DC magnetron sputtering, reactive ion etching, CVD(Chemical Vapor Deposition) 장비를 이용해 생성되었다. 제작된 STJ 소자는 액체헬륨으로 냉각(4K)시킨 후 I-V 특성곡선을 측정하여 초전도 특성을 확인하였고, STJ 소자의 성능을 결정하는 파라미터인 energy gap, normal resistance, normal resistivity, dynamic resistance, dynamic resistivity, 그리고 quality factor를 계산하였다. Nb/Al STJ 소자의 FWHM 에너지 분해능 계산 결과, 순수 Nb STJ 소자보다 $11\%$ 우수한 에너지 분해능 특성을 확인하였다.

• 방사성폐기물학회지
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• 제21권4호
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• pp.517-529
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• 2023

The objectives of this paper are: (1) to conduct the thermal analyses of the disposal cell using COMSOL Multiphysics; (2) to determine whether the design of the disposal cell satisfies the thermal design requirement; and (3) to evaluate the effect of design modifications on the temperature of the disposal cell. Specifically, the analysis incorporated a heterogeneous model of 236 fuel rod heat sources of spent nuclear fuel (SNF) to improve the reality of the modeling. In the reference case, the design, featuring 8 m between deposition holes and 30 m between deposition tunnels for 40 years of the SNF cooling time, did not meet the design requirement. For the first modified case, the designs with 9 m and 10 m between the deposition holes for the cooling time of 40 years and five spacings for 50 and 60 years were found to meet the requirement. For the second modified case, the designs with 35 m and 40 m between the deposition tunnels for 40 years, 25 m to 40 m for 50 years and five spacings for 60 years also met the requirement. This study contributes to the advancement of the thermal analysis technique of a disposal cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.129-130
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• 2009

The P/E characteristics of $HfO_2$ CTF memory capacitor with $SiO_2/HfO_2/Al_2O_3$(OHA) engineered tunnel barrier were investigated. After a growth of thermal oxide with a thickness of 2 nm, 1 nm $HfO_2$ and 3 $Al_2O_3$ layers were deposited by atomic layer deposition (ALD) system. The band offset was calculated by analysis of conduction mechanisms through Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. Moreover the PIE characteristics of $HfO_2$ CTF memory capacitor with OHA tunnel barrier was presented.

• Nuclear Engineering and Technology
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• 제40권5호
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• pp.429-438
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• 2008

The objective of the present study is the depth and layout optimizations of a single layer, high level radioactive waste repository in a discontinuous rock mass with special joint set arrangements. A single layer repository model, considering variations in the repository depths, pitches, and tunnel spacings, is used to analyze the thermomechanical interaction behavior. It is assumed that the repository is constructed in saturated granite with joints; the PWR spent fuel in a disposal canister is installed in a deposition drift which is then sealed with compacted bentonite; and the backfill material is filled in the repository tunnel. The decay heat generated by the high level radioactive wastes governs the thermomechanical behavior of the near field rock mass of the repository. The temperature and displacement behavior of the repository is influenced more by the pitch variations than the tunnel spacing and repository depth. However, the stress behavior is influenced more by the repository depth variations than the pitch and tunnel spacing. For the final selection of the tunnel spacing, pitch, and repository depth, other aspects such as the nuclide migration through a groundwater flow path, construction costs, operation costs, and so on should be considered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.93-94
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• 2005

본 연구에서는 저온 공정에서 제작되는 소자에의 응용을 위하여 Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD) 내에서 $N_2O$ 기체를 활용한 plasma oxidation을 통한 silicon 표면의 oxynitridation과 이로부터 tunnel gate dielectirics로 사용될 SiON 층을 형성하였으며, 형성된 SiOxNy 층의 전기적 특성을 측정하여 tunnel gate dielectrics로서 효과적인 기능을 수행함을 확인하였다. 형성된 박막의 성분 분석을 위하여 energy dispersive spectroscopy(EDS)를 이용하여 SiOxNy 층의 생성을 확인하였으며, 전기적인 특성을 통하여 tunnel gate dielectrics의 기능을 수행함을 알 수 있었다. 형성된 SiOxNy 층은 초박막 형태임에도 절연막으로서의 기능을 나타내었다.

• 한국자동차공학회논문집
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• 제10권6호
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• pp.90-99
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• 2002

The main purpose of this study lies on the development of micro dilution tunnel based on the Sierra Dilution chamber model. As a primary examination, characteristics of flow and temperature distributions during the steady dilution process in dilution chamber are observed with numerical analysis. The penetration of dilution air through porous tube as well as wall temperature and temperature gradient inside porous tube are examined. The thermophoretic velocity in terms of temperature behavior inside porous tube are defined and examined. Based on the ratio of penetration and thermophoretic velocities, all part of porous tube are shown to be safe from the particulate depositions. However, The inlet portion of porous tube in addition to the portion of impinging of dilution air are marginally safe from the particulate depositions. Generally the safer design against particulate deposition is required in provision f3r steady dilution process and for transient process as well.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)