• 공업화학
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• 제9권2호
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• pp.214-219
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• 1998

초음파분무 열분해에 의하여 유리 기판 위에 투명전도성 산화주석막을 증착하였다. 증착변수가 산화주석막의 전기저항, 광투과도, 결정구조 및 두께에 미치는 영향을 조사하였다. 증착시간과 염화주석(IV)의 농도가 증가함에 따라, 증착된 산화주석막의 전기저항과 가시선 및 근적외선 영역에서의 광투과도가 감소함을 보여주었다. 공기중에서 열처리온도가 증가하면, 증착된 산화주석막은 전기저항과 광투과도가 증가함을 나타냈다. 본 연구결과는 초음파분무열분해가 단일과정으로서 양질의 투명전도막을 효율적으로 제조할 수 있는 유망한 증착기술임을 암시한다.

• Environmental Engineering Research
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• 제22권4호
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• pp.347-355
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• 2017

This study investigated how the combined changes in environmental conditions and nitrogen (N) deposition influence the mineralization processes and carbon (C) dynamics of wetland soil. For this objective, we conducted a growth chamber experiment to examine the effects of combined changes in environmental conditions and N deposition on the anaerobic decomposition of organic carbon and the emission of greenhouse gases from wetland soil. A chamber with elevated $CO_2$ and temperature showed almost twice the reduction of total decomposition rate compared to the chamber with ambient atmospheric conditions. In addition, $CO_2$ fluxes decreased during the incubation under the conditions of ambient $CO_2$ and temperature. The decrease in anaerobic microbial metabolism resulted from the presence of vegetation, which influences the litter quality of soils. This can be supported by the increase in C/N ratio over the experimental duration. Principle component analysis results demonstrated the opposite locations of loadings for the cases at the initial time and after three months of incubation, which indicates a reduction in the decomposition rate and an increasing C/N ratio during the incubation. From the distribution between the decomposition rate and gas fluxes, we concluded that anaerobic decomposition rates do not have a significantly positive relationship with the fluxes of greenhouse gas emissions from the soil.

• Journal of Information Display
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• 제5권3호
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• pp.30-34
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• 2004

Fabrications of barrier layer on a polyethersulfon (PES) film and OLED based on a plastic substrate by atomic layer deposition (ALD) have been carried out. Simultaneous deposition of 30 nm of $AlO_x$ film on both sides of PES film gave film MOCON value of 0.0615 g/$m^2$/day (@38$^{\circ}C$, 100 % R.H.). Moreover, the double layer of 200 urn $SiN_x$ film deposited by PECVD and 20 nm of $AlO_x$ film by ALD resulted in the MOCON value lower than the detection limit of MOCON. The OLED encapsulation performance of the double layer have been investigated using the OLED structure of ITO/MTDATA(20 nm)/NPD(40 nm)/AlQ(60 nm)/LiF(1 nm)/Al(75 nm) based on the plastic substrate. Preliminary life time to 91 % of initial luminance (1300 cd/$m^2$) was 260 hours for the OLED encapsulated with 100 nm of PECVD deposited $SiN_x$/30 nm of ALD deposited $AlO_x$.

• 한국재료학회지
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• 제22권1호
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• 한국결정학회지
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• 제14권2호
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.778-783
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• 2003

For ac Plasma Display Panel (PDP), the lifetime should be guaranteed over 30000 hours. The lifetime is correlated with the deterioration characteristics for the weakest element in ac PDP. In this paper, in order to improve the lifetime of ac PDP, a short-term relative lifetime test method for a given element in the ac PDP is proposed. By this method, the effects of MgO thin film thickness and deposition rate on the relative lifetime of ac PDP are investigated. The relative lifetime is increased with MgO thin film thickness but it was almost saturated over 5000. The relative lifetime decreased with increase in the MgO deposition rate and increased with Xe% in the working gas of He+Ne+Xe..

• 한국세라믹학회지
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• 제42권7호
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• pp.455-460
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• 2005

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제28권3호
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• pp.397-402
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• 2007

Restenosis after percutaneous coronary intervention (PCI) continues to be a serious problem in clinical cardiology. To solve this problem, drug eluting stents (DES) with antiproliferative agents have been developed. Variable local drug delivery systems in the context of stenting require the development of stent manufacture, drug pharmacology and coating technology. We have worked on a system that integrates electrophoretic deposition (EPD) technology with the polymeric nanoparticles in DES for local drug delivery and a controlled release system. The surface morphology and drug loading amount of DES by EPD have been investigated under different operational conditions, such as operation time, voltage and the composition of media. We prepared poly-D,L-lactide-co-glycolic acid (PLGA) nanoparticles embedded with curcumin, which was done by a modified spontaneous emulsification method and used polyacrylic acid (PAA) as a surfactant because its carboxylic group contribute negative charge to the surface of CPNPs (?53.5 ± 5.8 mV). In the process of ‘trial and error' endeavors, we found that it is easy to control the drug loading amount deposited onto the stent while keeping uniform surface morphology. Accordingly, stent coating by EPD has a wide application to the modification of DES using various kinds of nanoparticles and drugs.