• Korean Journal of Computational Design and Engineering
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• v.8 no.3
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• pp.150-156
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• 2003

Direct Metal Deposition (DMD) is a new additive process producing three-dimensional metal components or tools directly from CAD data, which aims to take mold making and metalworking in an entirely new direction. It is the blending of five common technologies: lasers, CAD, CAM, sensors and materials. In the resulting process, alternatively called laser cladding, an industrial laser is used to locally heat a spot on a tool-steel work piece or platform, forming a molten pool of metal. A small stream of powdered tool-steel metal is then injected into the metal pool to increase the size of the molten pool. By moving the laser beam back and forth, under CNC control, and tracing out a pattern determined by a computerized CAD design, the solid metal part is eventually built line-by-line, one layer at a time. DMD produces improved material properties in less time and at a lower cost than is possible with traditional fabrication technologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.121-124
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• 1999

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.80-84
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• 1997

In this experiment, A1$_2$O$_3$ thick films were prepared by electrophoretic method using A1$_2$O$_3$ fine Powder of which composition were FA-5-500 and FA-5-900. The growth behavior of A1$_2$O$_3$ thick films were characterized as preparation conditions, such as applied voltage, deposition time and adding conditions. As a result, A1$_2$O$_3$ thick films were successfully fabricated by electrophoretic method on molybdnum plate in which etanol and distilled used were used as a solvent. Deposition conditions for good uniformity of the A1$_2$O$_3$ thick films were applied voltage of 60volts, deposition time of 2 seconds, heat treatment at 1$700^{\circ}C$ for 5 minutes.

• Proceedings of the Korea Water Resources Association Conference
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• 1984.07a
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• pp.7-21
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• 1984

Entrainment and deposition experiments were counducted in fresh water on four groups of sediments: three well-defined sediments of uniform composition and narrow-size distribution (1 to 9 um, 10 to 50 um, and 50 to 90 um), and a fourth group which was a mixture of these three sediments. In the entrainment experiments and at a particular stress, the steady-state suspended sediment concentration of the coarse group was the lowest while the concentrations of the fine and medium groups were higher that that of the coarse group but were similar to each other. Deposition experiments generally showed an exponential decrease of suspended sediment concentration with time with the decay time being a function of particle size and applied stress.

• Journal of Environmental Health Sciences
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• v.32 no.4 s.91
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• pp.359-372
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• 2006

In order to investigate the daily deposition characteristics of water-soluble inorganic components in airborne deposit on the Iksan, deposition samples were collected using a deposition gauge from October 16 to November 1, 2004. Deposition samples were collected using two different sampling gauges, a dry gauge and a wet gauge, respectively. To get wet the bottom of wet gauge during the sampling period, the volume of $30{\sim}50ml$ distilled ionized water was added in a wet gauge before the beginning of each deposition sampling. Deposition samples were collected twice a day and analyzed for inorganic water-soluble anions ($Cl^-,\;{NO_3}^-,\;{SO_4}^{2-}$) and cations (${NH_4}^+,\;Na^+,\;K^+,\;Mg^{2+},\;Ca^{2+}$) using ion chromatography. Qualify control and quality assurance of analytical data were checked by the data obtained from reinjection of standard solution, Dionex cross check standard solutions, and random several deposition samples, and measured data was estimated to be reliable. Considering the deposition sample volume, the sampling time, the surface area of sampling container, and the ion concentration measured, the daily deposition amounts for measured ions were calculated in $mg/m^2$. The total daily deposition amounts of all measured ions for dry and wet gauge were $7.5{\pm}2.8$ and $17.7{\pm}4.2mg/m^2$, respectively. A significant increase in deposition amount during rainfall days was observed for both wet gauge and dry gauge, having no difference of deposition amount between in wet gauge and in dry gauge. The mean deposition of all ions measured in this study were higher in wet gauge than in dry gauge because of the surface difference of the sampling container, especially for ${NH_4}^+\;and\;{SO_4}^{2-}$. The mean deposition amounts of ${NH_4}^+\;and\;{SO_4}^{2-}$ in wet gauge were found to be about 10 times and 3 times higher than those in dry gauge, while the rest of the chemical species were equal or a little higher in wet gauge than in dry gauge. Dominant species in dry gauge were ${NO_3}^-\;and\;Ca^{2+}$, accounting for 21% and 28% of the total ion deposition, whereas those in wet gauge were ${SO_4}^{2-}\;and\;{NH_4}^+$, accounting for 19% and 41% of the total ion deposition, respectively.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.98-104
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• 1999

In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.2
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• pp.291-299
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• 2004

DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.116-121
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• 1999

0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.3
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• pp.501-508
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• 1987

Experimental studies of particle (TiO$\_$2/) deposition from the laminar hot gas particle flow (about 1565K) onto the cold wall surface (about 1215K-1530K) were carried out by the 'real time' laser light reflectivity method (LLRM) and the photographs of scanning electron microscope(SEM). The LLRM was used for the measurement of thermophoretic deposition rates of small particles (d$\_$p/<3.mu.m), and the photographs of SEM were used for determining what factors control the collection of particles having diameters ranging from 0.2 to 30 microns. Two phenomena are primarily responsible for transport of the particles across the laminar boundary layers and deposition: (1) particle thermophoresis (i.e. particles migration down a temperature gradient), and (2) particle inertial impaction, the former effect being especially larger factor of the particle deposition in its size over the range of 0.2 to 1 microns. And also, this study indicates that thermophoresis can be important for particles as large as 15 microns. Beyond d$\_$p/=16.mu.m, this effect diminishes and the inertial impaction is taken into account as a dominant mechanism of particle deposition. The results of present experiments found to be in close agreement with existing theories.