• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.314-314
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• 2006

The FRET property has been extensively studied from the theoretical view points to the practical applications. In case that the donor and acceptor are confined in nanodimension, the FRET effectively occurs, because of their distant dependent characteristic. However, there are no reports concerning FRET with one dimensional (1D) nanomaterial. We have successfully prepared the PMMA nanotubes using vapor deposition polymerization as the platform of FRET. The dye-PMMA composite nanofiber has also been produced without phase separation and any deterioration of properties of the dyes. The PMMA 1D nanocomposite doped two dyes with great spectral overlap between donor and acceptor displayed FRET property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1277-1282
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• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.126-127
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• 2005

Semiconductor carbon nanotube was grown on oxided silicon wafer with Atmosphere Pressure Chemical Vapor Deposition (APCVD) ethmod and investigated the electrical property after thermal oxidation at 300$^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at 300$^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at 300$^{\circ}C$ in air.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.519-523
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• 2000

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.276-279
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• 2004

CdS thin films on polymer substrates such as polycarbonate(PC) and polyethylene terephthalat(PET) have many merits such as light weight, small volume and can make the obtained devices folded, easily carried. In present work, CdS thin films on glass, PC, and PET substrates have been prepared by chemical bath deposition. The structural and optical propertied of the films depending on substrate types have been investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.159-159
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.55-59
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• 2004

We fabricates the $TiO_2$ thin film from anatase phase $TiO_2$ powder having good photocatalytic property using aerosol deposition method at room temperature. Aerosol deposition method, which sprays an aerosol powder with ultrasonic velocity and deposits a thin film on substrate at low temperature, has the advantages of low thermal stress and low cost. To fabricate the $TiO_2$ thin film, the aerosol bath pressure and chamber pressure were 500 torr and 0.4 torr, respectively. The difference of aerosol bath pressure and chamber pressure accelerated the $TiO_2$ nano powder to ultrasonic velocity through the nozzle of $0.4 mm{\times}10 mm$ and $TiO_2$ thin film was finally formed. SS mesh with diameter of 50 mm was used as a substrate to apply the $TiO_2$ thin film to water quality purification. The raw powder was dehydrated for the good dispersion of $TiO_2$ powder. To suppress the formation of second particle, the powder was dispersed for 90 min in alcohol bath by ultrasonic treatment and desiccated. The grain size of $1 {\mu}m$ was observed in $TiO_2$ thin film deposited on SUS mesh by scanning electron microscopy (SEM). The anatase phase of $TiO_2$ thin film was also observed by X-ray diffraction (XRD) and the anatase phase of raw powder was nicely maintained after aerosol deposition. The results are applicable to water treatment filter having photocatalytic reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.21-24
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• 1998

The properties of ZrN layer deposited by Sputtering system have been investigated in the application of diffusion barrier layer to copper. ZrN layer exhibited a excellent barrier property up to $700^{\circ}$ and higher resistivity. If an excess $O_2$is protected during the process of ZrN deposition, ZrN layer will be possible to use a diffusion barrier layer to copper.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.523-525
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• 1996

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1444-1446
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• 2009

The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).