• 한국표면공학회지
• /
• 제53권3호
• /
• pp.124-129
• /
• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.250-250
• /
• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2009년도 춘계학술대회 논문집
• /
• pp.151-152
• /
• 2009

We coated $TiO_2$ thin films on particles by a rotating cylindrical plasma chemical vapor deposition (PCVD) process and investigated the effects of various process variables on the morphology and growth of thin films. The polypropylene (PP) particles were rotated with the cylindrical PCVD reactor and they were coated with $TiO_2$ thin films uniformly by the deposition of thin mm precursors in the gas phase. The $TiO_2$ thin films were coated on the PP particles uniformly and the thickness of thin films almost proportional to the deposition time. The $TiO_2$ thin films grew more quickly on the PP particles with increasing rotation speed of the reactor. This study shows that a rotating cylindrical PCVD reactor can be a good method to coat high-quality $TiO_2$ thin films uniformly on particles.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.254-254
• /
• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• 한국환경과학회지
• /
• 제15권2호
• /
• pp.121-131
• /
• 2006

Atmospheric bulk (wet and dry) samples were monthly collected in Masan and Heangam areas of Korea, to assess the deposition flux and seasonal variation of polycyclic aromatic hydrocarbons (PAHs). Deposition fluxes of PAHs in bulk samples were determined using gas chromatography coupled to mass spectrometer detector (GC/MSD). Particle deposition fluxes from Masan and Haengam areas varied from 13 to $87\;g/m^2/year$ and from 5 to $52\;g/m^2/year$, respectively. PAHs deposition fluxes in atmospheric bulk samples in Masan and Haengam areas ranged from 135 to $464\;{\mu}g/m^2/year$ and from 62.2 to $194\;{\mu}g/m^2/year$, respectively. Atmospheric deposition fluxes of particles and PAHs in this study were comparable to or slightly lower values than those from different locations in Korea and other countries. PAHs profiles of atmospheric deposition bulk samples showed slightly different from two sampling areas, however the predominant species of PAHs were similar. Indeno (1,2,3-c,d)pyrene, benzo(g,h,i)perylene, phenanthrene compounds were the most detected PAHs in deposition bulk samples. Carcinogenic PAHs occupied the contribution of approximately $30-40\%$ of the total PAHs deposition fluxes. The non-metric multi-dimensional scaling (MDS) was used, to assess the differentiation of PAHs source between two sampling areas. The result suggests that PAHs contamination sources were different according to the location and season surveyed. There was no an apparent relationship between the PAHs deposition flux against temperature and rainfall amount, even though summer season with the highest temperature and the largest amount of precipitation showed the lowest PAHs deposition flux. Benzo(e)pyrene/benzo(a)pyrene ratio indicated that the photo-degradation process was one of important factors to the seasonal variation of PAHs with the lower deposition fluxes.

• 한국전기전자재료학회논문지
• /
• 제11권6호
• /
• pp.458-464
• /
• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.339.1-339.1
• /
• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.729-730
• /
• 2006

The research involves the development of a powder metallurgical route for producing good quality TiAl targets for making physical vapour deposition (PVD) coatings. Mixtures of elemental titanium and aluminium powders were mechanically milled using a novel discus milling technique under various conditions. Hot isotropic pressing (HIP) was then employed for consolidation of the mechanically alloyed powders. A cathodic arc vapour deposition process was applied to produce a TiAlN coating. Microstructural examination was conducted on the target material and PVD coatings, using X-ray diffractometry (XRD), X-ray photoelectron spectrometry (XPS) and scanning electron microscopy (SEM). It has been found that combining mechanical alloying and HIP enable us to produce fairly good quality of TiAl based target. The PVD coatings obtained from the TiAl target showed very high microhardness values.

• 반도체디스플레이기술학회지
• /
• 제21권2호
• /
• pp.74-84
• /
• 2022

As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

• 한국전기전자재료학회논문지
• /
• 제16권1호
• /
• pp.1-4
• /
• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.