• Journal of ILASS-Korea
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• v.11 no.1
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• pp.7-16
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• 2006

Performance of thin films fabricated with the electrostatic spray deposition (ESD) technique is strongly governed by surface morphology, which depends on deposition parameters such as deposition time and temperature, solution properties, and surface characteristics of substrates. In this article, the state of the art on the relationships between the surface morphology and the deposition parameters is presented. Also studies on the electro-hydrodynamic atomization process and the motion of drops relevant to the ESD technique are briefly reviewed, and the future research works are suggested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3168-3172
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• 2007

As the minimum feature size decreases, control of contamination by nanoparticles is getting more attention in semiconductor process. Cleaning technology which removes nanoparticles is essential to increase yield. A reference wafer on which particles with known size and number are deposited is needed to evaluate the cleaning process. We simulated particle trajectories in the chamber by using FLUENT and designed a particle deposition system which consists of scanning mobility particle sizer (SMPS) and deposition chamber. Charged monodisperse particles are generated using SMPS and deposited on the wafer by electrostatic force. The experimental results agreed with the simulation results well in terms of particle number and deposition area according to particle size, flow rate and deposition voltage.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.10
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• pp.88-95
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• 2006

Cold gas dynamic spray is a relatively new coating process by which coatings can be produced without significant heating during the process. Cold-spray uses supersonic gas flow to carry metallic powders to the substrate. Its low process temperature can minimize thermal stress and also reduce the deformation of the substrate. Most researches on cold-spray have focused on micro scale coating, but in this study macro scale deposition was conducted. Properties of aluminum layer by cold-spray deposition such as coefficient of thermal expansion (CTE), modulus of elasticity. hardness, and electric conductivity were measured. The results showed that properties of aluminum layer by cold-spray deposition were different from properties of pure aluminum and aluminum alloy.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• Journal of Mechanical Science and Technology
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• v.20 no.10
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• pp.1680-1690
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• 2006

As a promising and novel manufacturing technology, laser aided direct metal deposition (DMD) process produces near-net-shape functional metal parts directly from 3-D CAD models by repeating laser cladding layer by layer. The key of the build-up mechanism is the effective control of powder delivery and laser power to be irradiated into the melt-pool. A feedback control system using two sets of optical height sensors is designed for monitoring the melt-pool and real-time control of deposition dimension. With the feedback height control system, the dimensions of part can be controlled within designed tolerance maintaining real time control of each layer thickness. Clad nugget shapes reveal that the feedback control can affect the nugget size and morphology of microstructure. The pore/void level can be controlled by utilizing pulsed-mode laser and proper design of deposition tool-path. With the present configuration of the control system, it is believed that more innovation of the DMD process is possible to the deposition of layers in 3-D slice.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.53-58
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• 2023

The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.135-145
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• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.