• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.486-490
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• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• 한국안광학회지
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• 제18권2호
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• pp.107-115
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• 2013

목적: 본 연구에서는 눈 화장품인 아이라이너에 노출시킨 소프트 콘택트렌즈의 파라미터가 어떻게 변하는가를 알아보고, 세척방법을 달리하여 세척하였을 때의 세척효과와 렌즈 파라미터의 회복정도를 비교하고자 하였다. 방법: 서로 다른 재질로 제조된 3종류의 소프트 콘택트렌즈에 각각 1시간, 4시간 및 6시간 동안 아이라이너를 침착시킨 후 안경용 초음파 세척 및 손 세척을 시행하였으며, 세척 전후 렌즈의 가시광선 투과도, 직경 및 표면의 변화를 비교하였다. 결과: 소프트 콘택트렌즈의 가시광선 투과도는 아이라이너의 침착시간이 길어질수록 감소하였다. 렌즈의 표면을 관찰한 결과 아이라이너의 침착 양상은 렌즈재질의 물성에 따라 다르게 나타나 narafilcon A 재질 렌즈에서 가장 침착이 큼을 알 수 있었다. 렌즈 직경은 hilafilcon B 및 etafilcon A 재질 렌즈는 감소하였으나, narafilcon A재질 렌즈는 증가하는 것으로 나타났다. 이러한 아이라이너의 침착은 안경용 초음파 세척기를 이용한 세척보다는 다목적 용액을 이용한 손 세척 시 세척효율이 우수한 것으로 나타났으나 렌즈의 직경이나 가시광선 투과도, 렌즈표면 등 렌즈 파라미터가 원래 상태로 회복되는 데에는 한계가 있었다. 결론: 이상의 결과로 소프트렌즈를 착용한 상태에서 눈 화장 하는 것을 최소화하는 것이 옳으며, 반복적으로 눈 화장을 할 때에는 렌즈 파라미터의 변화를 고려한 착용시간의 단축이나 빠른 렌즈의 교체주기가 필요하다고 사료된다.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1590-1592
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• 1999

We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.

• 한국표면공학회지
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• 제27권2호
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• pp.65-73
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• 1994

Effects of deposition parameter on the ionic conductivity and structural change of the Lithium borosili-cate solid electrolyte films, prepared by rf sputtering using 7$LI_2O-3B_2O_3-1SiO_2$ single phase target and also a mosaic target enriched with $LI_2O$, were analyzed by measuring AC impedance and IR absorption spectra for the films. Thed solid electrolyte film deposited from the single phase target exhibited very low ionic conductivi-ty of $10^{-10}{\Omega}^{-1}cm{-1}$ at room temperature, a result of low $Li^+$ ion content(7.52 at%) in the film. The $Li^+$ con-ductivity for the films deposited from the mosaic target, however, significantly increased to $10^{-7}{\Omega}^{-1}cm{-1}$ due to both an increased $Li^+$content (14.75 at %) and a structural change of the films. The increased ionic conduc-tivity of the film appears to be associated with an easiness of ionic mobility by structural change of glassy film from a some close packed network structure to a open one. These structural changes of film were found to be closely related to the increase in the peak intensity at~$960cm^{-1}$ of IR absorption spectra for the glassy films. With increasing either argon pressure from 3 to 21 mtorr or rf power from 2 to 3 W/$cm^2$, the $Li^+$ conduc-tivity for the films significantly increased to an order of $10^{-6}{\Omega}^{-1}cm{-1}$ due to an increase in openness of film structure, as confirmed by both an increase in the IR absorption peak intensity at ~$960cm^{-1}$ and a resultant reduction of activation energy for mobility of $Li^+$ ion.

• 전기화학회지
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• 제14권3호
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• pp.145-151
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• 2011

ZnSe는 가시광선 영역에서 넓은 밴드갭을 가지고 있는 II-VI족 화합물 반도체 소자로서 레이저 다이오드, 디스플레이 그리고 태양전지와 같은 다양한 응용분야에 적용되고 있다. 본 연구에서는 전기화학적 전착방법을 이용하여 ITO 전극상에 ZnSe 박막을 합성하여, XRD와 SEM으로 ZnSe 결정의 합성과 zinc blende 구조의 형태를 관측하였고, UV 분광기를 활용하여 밴드갭을 측정한 결과 2.76 eV이었다. 또한, 분자동역학에서 활용되는 밀도범함수 이론 (DFT, Density Functional Theory)을 도입하여 ZnSe 결정에 대한 밴드 구조의 해석을 수행하였다. Zinc blende구조를 갖는 ZnSe 결정에 대하여 LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), 그리고 B3LYP (Becke, 3-parameter, Lee-Yang-Parr) 범함수를 이용하여 밴드구조와 상태밀도 (Density of State)를 모사하였다. 각각의 경우에 대해 에너지 밴드갭을 구한 결과, B3LYP 범함수로 해석한 경우에 실험치와 근사치인 2.65 eV의 밴드갭을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Corrosion Science and Technology
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• 제18권6호
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• pp.258-266
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• 2019

The objective of this study was to evaluate corrosion resistance of additive manufactured 316L stainless steel and alloy 625 powders widely used in corrosion resistance alloys of marine industry in comparison with cast alloys. Directed Energy Deposition (DED) method was used in this work for sample production. DED parameter adjustment was also studied for optimum manufacturing and for minimizing the influence of defects on corrosion property. Additive manufactured alloys showed lower corrosion resistance in seawater compared to cast alloys. The reason for the degradation of anti-corrosion property was speculated to be due to loss of microstructural integrity intrinsic to the additive manufacturing process. Application of heat treatment with various conditions after DED was attempted. The effect of heat treatments was analyzed with a microstructure study. It was found that 316L and alloy 625 produced by the DED process could recover their expected corrosion resistance when heat treated at 1200 ℃.

• 한국재료학회지
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• 제19권2호
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.624-630
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• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.