• 한국환경생태학회지
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• 제15권3호
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• pp.230-236
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• 2001

본 연구는 일본 북해도 지방의 임해공업단지에 인접되어 있는 점소목지역 내 활엽수 천연림에서 주요 염기성 양이온에 대한 물질순환 수지를 파악하고자 강우(wet deposition), 임내우(throughfall), 수간류(stemflow) 그리고 토양침투수(soil leachate)에 대한 이온 flux를 정량화하였다. 조사 결과 강우는 평균 pH 4.3의 강한 산성우로 강우에 의한 $H^{+}$ flux는 034kmo1$_{c }$ $ha^{-1}$ /이었고, 임내우와 수간류에 의한 염기성 양이온($K{+ }$ , $Na^{+}$ , $Ca^{ 2+ }$, $Mg^{2+}$ )의 flux는 $1.6kmol_{c}$ ha$^{-1}$ 로 강우의 0.49 kmolc $ha^{-1+}$ /보다 3배 많았다. 수관충 용탈(canopy leaching)에 의한 염기성 양이온의 flux는 0.95kmo1c $ha^{H}$ 로 강우에 의한 $H^{+}$ flux보다 2.8배 높았으며, H$^{+}$는 수관층에서 치환성 양이온들에 의해서 거의 소비되었다. 토양층에서 이온배출 flux는 토양특성에 의존되었으며, 토양 중 Ca은 proton소비에 중요한 인자로 작용하였다. 생태계의 물질순환에 대한 수지에서 Na, Ca및 Mg은 생태계 내부에서 외부로 방출되는 양보다 생태계로 유입되고 있는 양이 많아 생태계에 축적되고 있었으나, K의 경우는 부의 flux를 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• 한국환경과학회지
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• 제16권9호
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• pp.1019-1026
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• 2007

This study was performed in 30 selected apartments in Seoul, Asan and Daegu area which were constructed within 4 years and over 4 years, to measure the concentration of VOCs(benzene, toluene, xylene) from July, 2004 to September. Mean ratios of indoor to outdoor VOCs concentrations in the construction under 4 years were higher in 1 than average, I/O ratio of over 4 years were lower in 1. This was considered that the VOCs density influences indoor pollutant. For the indoor air quality estimation, the deposition constant and the source strength factor of toluene were $1.49{\pm}2.05\;hr^{-1}\;and\;36.95{\pm}52.26\;ppb/h$, respectively.

• 센서학회지
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• 제11권6호
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• 한국재료학회지
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• 제24권6호
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• pp.319-325
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• 2014

Cobalt nano-rods were fabricated using a template-free electrochemical-deposition process. The structure of cobalt electro-deposits strongly depends on the electrolyte composition and on the density of the applied current. In particular, as the content of boric acid increased in the electrolyte, deposits of semi-spherical nuclei formed, and then grew into one-dimensional nano-rods. From analysis of the electro-deposits created under the conditions of continuous and pulsed current, it is suggested that the distribution of the active species around the electrode/electrolyte interface, and their transport, might be an important factor affecting the shape of the deposits. When transport of the active species was suppressed by lowering the deposition temperature, more of the well-defined nano-rod structures were obtained. The optimal conditions for the preparation of well-defined nano-rods were determined by observing the morphologies resulting from different deposition conditions. The maximum height of the cobalt nano-rods created in this work was $1{\mu}m$ and it had a diameter of 200 nm. Structural analysis proved that the nano-rods have preferred orientations of (111).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.308-314
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• 2005

The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.327-332
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• 2009

In the devices structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) /tris (8-hydroxyquinoline)aluminum$(Alq_3)$electron-transport-layer(ETL)(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP))/Al, we have studied the efficiency improvement of organic light-emitting diodes depending on the thickness variation of BCP using electron transport layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm under a base pressure of $5{\times}10^{-6}$ Torr using at thermal evaporation, respectively. The TPD and $Alq_3$ layer were evaporated to be deposition rate of $2.5{\AA}/s$. And the BCP was evaporated to be a4 a deposition of $1.0{\AA}/s$. As the experimental results, we found that the luminous efficiency and the external quantum efficiency of the device is superior to others when thickness of BCP is 5 nm. Also, operating voltage is lowest. Compared to the ones from the devices without BCP layer, the luminous efficiency and the external quantum efficiency were improved by a factor of four hundred ninty and five hundred, respectively. And operating voltage is reduced to about 2 V.

• Steel and Composite Structures
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• 제33권6호
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• pp.767-776
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• 2019

In this article, a simple and robust multi-objective assessment method to control design angles and node positions connected among steel outrigger truss members is proposed to approve both structural safety and economical cost. For given outrigger member layouts, the present method utilizes general-purpose prototypes of outrigger members, having resistance to withstand lateral load effects directly applied to tall buildings, which conform to variable connecting node and design space deposition. Outrigger layouts are set into several initial design conditions of height to width of an arbitrary given design space, i.e., variable design space. And then they are assessed in terms of a proposed multi-objective function optimizing both minimal total displacement and material quantity subjected to design impact factor indicating the importance of objectives. To evaluate the proposed multi-objective function, an analysis model uses a modified Maxwell-Mohr method, and an optimization model is defined by a ground structure assuming arbitrary discrete straight members. It provides a new robust assessment model from a local design point of view, as it may produce specific optimal prototypes of outrigger layouts corresponding to arbitrary height and width ratio of design space. Numerical examples verify the validity and robustness of the present assessment method for controlling prototypes of outrigger truss members considering a multi-objective optimization achieving structural safety and material cost.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.