• Title/Summary/Keyword: Deposition Process

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Evaluation of the Impact of Filter Media Depth on Filtration Performance and Clogging Formation of a Stormwater Sand Filter (강우유출수 모래 필터의 여과기능 및 폐색 현상에 대한 필터 여재 깊이의 영향 평가)

  • Segismundo, Ezequiel Q.;Lee, Byung-Sik;Kim, Lee-Hyung;Koo, Bon-Hong
    • Journal of Korean Society on Water Environment
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    • v.32 no.1
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    • pp.36-45
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    • 2016
  • Sand filters are widely used in infiltration systems to manage polluted urban runoff. Clogging, which is mainly caused by the deposition of sediments on the filter media, reduces the filter system's infiltration capacity, which further limits its lifespan and function. The physical, chemical and biological clogging characteristics of sand filter, therefore, need to be known for effective design and maintenance. Physical clogging behavior and variations in the characteristics of sand filters according to different media depths are examined in this paper. The variations were observed from laboratory column infiltration tests conducted in a vertical flow and fluctuating head condition. It can be seen that an increase in filter media depth results in a high sediment removal performance; however, it leads to a shorter lifespan due to clogging. In the choice of filter media depth to be used in field applications, therefore, the purpose of facilities as well as maintenance costs need to be considered. At all filter media depth configurations, premature clogging occurred because sediments of 100~250 μm clogged the top 15% of filter media depth. Thus, scrapping the top 15% of filter media may be suggested as the first operational maintenance process for the infiltration system.

Stabilization of cubic-BN/hexagonal-BN Mixed Films by Post-Annealing (후 열처리에 의한 cubic-BN 상과 hexagonal-BN상 혼합 막의 안정성 향상)

  • 박영준;최제형;이정용;백영준
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.155-161
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    • 2000
  • BN films composed of c-BN(70%) and h-BN(30%) phases have been synthesized by the ion beam assisted deposition (IBAD) process and stabilized by post-annealing. Boron was e-beam evaporated at 1.2 $\AA$/sec and nitrogen was ionized and accelerated at about 100 eV by the end-hall type ion gun. Substrates were negatively biased by DC 400 and 500 V, respectively, and heated at $700^{\circ}C$. Synthesized BN films were in-situ post-annealed at 700 or $800^{\circ}C$, respectively, for 1 hr without breaking vacuum. BN films without post-annealing were peeled off from substrates immediately when they were exposed to the air while those with post-annealing at $800^{\circ}C$ were stabilized. Post annealing reduced the film stress from 4.9 GPa to 3.4 GPa, but no considerable stress release in the c-BN phase was observed, contrary to previous reports that the stress relaxation in the c-BN phase is the main mechanism for the stabilization. Structural and chemical relaxation of non c-BN phase is supposed to be responsible for the film stress reduction and, in turn, stabilization, especially when the c-Bn content of the film is not high.

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Step-Coverage Consideration of Inter Metal Dielectrics in DLM Processing : PECVD and $O_3$ ThCVD Oxides (이층 배선공정에서 층간 절연막의 층덮힘성 연구 : PECVD와 $O_3$ThCVD 산화막)

  • Park, Dae-Gyu;Kim, Chung-Tae;Go, Cheol-Gi
    • Korean Journal of Materials Research
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    • v.2 no.3
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    • pp.228-238
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    • 1992
  • An investigation on the step-coverage of PECVD and $O_3$ ThCVD oxides was undertaken to implement into the void-free inter metal dielectric planarization using multi-chamber system for the submicron double level metallization. At various initial aspect ratios the instantaneous aspect ratios were measured through modelling and experiment by depositing the oxides up to $0.9{\mu}m$ in thickness in order to monitor the onset of void formation. The modelling was found to be in a good agreement with the observed instantaneous aspect ratio of TEOS-based PECVD oxide whose re-entrant angle was less than $5^{\circ}$. It is demonstrated that either keeping the instantaneous aspect ratio of PECVD oxide as a first layer less than a factor of 0.8 or employing Ar sputter etch to create sloped oxide edge ensures the void-free planarization after$O_3$ ThCVD oxide deposition whose step-coverage is superior to PECVD oxide. It has been observed that $O_3$ ThCVD oxide etchback scheme has shown higher yield of via contact chain than non etchback process, with resistance per via contact of $0.1~0.3{\Omega}/{\mu}m^2$.

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Friction and Wear Behavior of Ultra-Thin TiN Film during Sliding Wear against Alumina and Hardened Steel (마모 상대재 변화에 따른 TiN 극박막의 마찰 및 마모거동)

  • Song, Myeong-Hun;Lee, Jae-Gap;Kim, Yong-Seok
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.62-68
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    • 2000
  • Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

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PLEIOTROPHIN EFFECTS ON BINDING AND SUBSEQUENT OSTEOGENESIS OF HUMAN MESENCHYMAL STEM CELLS (Pleiotrophin이 골수 줄기 세포의 부착 및 골형성에 미치는 효과에 대한 연구)

  • Yoon, Jung-Ho;Eune, Jung-Ju;Jang, Hyon-Seok;Rim, Jae-Suk;Lee, Eui-Seok;Kim, Dae-Sung;Kwon, Jong-Jin
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.28 no.2
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    • pp.111-117
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    • 2006
  • An area of current research is investigating the app1ication of human mesenchymal stem cells or hMSCs as a cell-based regenerative therapy. In order to achieve effective bone regeneration, appropriate matrices functioning as cell-carriers must be identified and optimized in terms of function, efficacy and biocompatibility. Two methods of approaching optimization of matrices are to facilitate adhesion of the donor hMSCs and furthermore to facilitate recruitment of host progenitor cells to osteoblastic differentiation. Pleiotrophin is an extracellular matrix protein that was first identified in developing rat brains and believed to be associated with developing neuronal pathways. A recent publication by Imai and colleagues demonstrated that transgenic mice with upregulated pleiotrophin expression developed a greater volume of cortical as well as cancellous bone. The proposed mechanism of action of pleiotrophin is demonstrated here. Through either environmental stresses and/or intracellular regulation, there is an increase in pleiotrophin production. The pleiotrophin is released extracellularly into areas requiring bone deposition. A receptor-mediated process recruits host osteoprogenitor cells into these areas. Therefore, the aim of our study was to investigate the osteoconductive properties of pleiotrophin. We wanted to determine if pleiotrophin coating facilitates cellular adhesion and furthermore if this has any effect on hMSCs derived bone formation in an animal model. The results showed a dose dependent response of cellular adhesion in fibronectin samples, and cellular adhesion was facilitated with increasing pleiotrophin concentrations. Histologic findings taken after 5 weeks implantation in SCID mouse showed no presence of bone formation with only a dense fibrous connective tissue. Possible explanations for the results of the osteogenesis assay include inappropriate cell loading.

Laser crystallization in active-matrix display backplane manufacturing

  • Turk, Brandon A.;Herbst, Ludolf;Simon, Frank;Fechner, Burkhard;Paetzel, Rainer
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1261-1262
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    • 2008
  • Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

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Fabrication of patterned substrate by wet process for biochip (습식 공정법에 의한 바이오칩 용 패터닝 기판 제조)

  • Kim, Jin-Ho;Lee, Min;Hwang, Jong-Hee;Lim, Tae-Young;Kim, Sae-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.6
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    • pp.288-292
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    • 2009
  • Hydrophobic/hydrophilic patterned substrates were fabricated on a glass substrate by a liquid phase deposition (LPD) method. Hydrophobic surface was obtained by modifying ZnO thin films with a rough surface using a fluoroalkyltrimethoxysilane (FAS) and hydrophilic surface was prepared by decomposing FAS on an exposed to UV light. The hexagonal ZnO rods were perpendicularly grown by LPD method on glass substrates with a ZnO seed layer. The diameter and thickness of hexagonal ZnO rods were increased as a function of increases of immersion time. The surface morphology, thickness, crystal structure, transmittance and contact angle of prepared ZnO thin films were measured by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectrophotometer (UV-vis) and contact angle measurement. Hydrophilic ZnO thin films with a contact angle of $20^{\circ}{\sim}30^{\circ}$ were changed to a hydrophobic surface with a contact angle of $145^{\circ}{\sim}161^{\circ}$ by a FAS surface treatment. Prepared hydrophobic surface was pattered by an irradiation of UV light using shadow mask with $300\;{\mu}m$ or 3 mm dot size. Finally, the hydrophobic surface exposed to UV light was changed to a hydrophilic surface.

A Study on Analysis of Landslide Disaster Area using Cellular Automata: An Application to Umyeonsan, Seocho-Gu, Seoul, Korea (셀룰러 오토마타를 이용한 산사태 재난지역 분석에 관한 연구 - 서울특별시 서초구 우면산을 대상으로-)

  • Yoon, Dong-Hyeon;Koh, Jun-Hwan
    • Spatial Information Research
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    • v.20 no.1
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    • pp.9-18
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    • 2012
  • South Korea has many landslides caused by heavy rains during summer time recently and the landslides continue to cause damages in many places. These landslides occur repeatedly each year, and the frequency of landslides is expected to increase in the coming future due to dramatic global climate change. In Korea, 81.5% of the population is living in urban areas and about 1,055 million people are living in Seoul. In 2011, the landslide that occurred in Seocho-dong killed 18 people and about 9% of Seoul's area is under the same land conditions as Seocho-dong. Even the size of landslide occurred in a city is small, but it is more likely to cause a big disaster because of a greater population density in the city. So far, the effort has been made to identify landslide vulnerability and causes, but now, the new dem and arises for the prediction study about the areal extent of disaster area in case of landslides. In this study, the diffusion model of the landslide disaster area was established based on Cellular Automata(CA) to analyze the physical diffusion forms of landslide. This study compared the accuracy with the Seocho-dong landslide case, which occurred in July 2011, applying the SCIDDICA model and the CAESAR model. The SCIDDICA model involves the following variables, such as the movement rules and the topographical obstacles, and the CAESAR model is also applied to this process to simulate the changes of deposition and erosion.

A Study on the Kinetics of Copper Ions Reduction and Deposition Morphology with the Rotating Disk Electrode (RDE를 이용한 구리이온의 환원속도 및 전착형태에 관한 고찰)

  • Nam, Sang Cheol;Um, Sung Hyun;Lee, Choong Young;Tak, Yongsug;Nam, Chong Woo
    • Applied Chemistry for Engineering
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    • v.8 no.4
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    • pp.645-652
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    • 1997
  • Electrochemical characteristics and kinetic parameters of copper ion reduction were investigated with a platinum rotating disk electrode (RDE) in a diffusion controlled region. Reduction of Cu(II) in sulfate had one-step two-xelectron process, while the reduction of Cu(II) in chloride solution was involved two one-electron processes. The transfer coefficient of Cu(II) in sulfate solution was lowest, and the transfer coefficient of Cu(I) in halide solutions had the value of nearly one. In chloride solutions, electrodeposition rate of Cu(II) was about one hundred times faster than Cu(I). Diffusion coefficient increased in the order of Cu(II) in chloride solution, Cu(I) in the iodide, bromide, chloride solution, Cu(II) in sulfate solution. The calculated ionic radii and activation energy for diffusion decreased in the same order as above. Morphological study on the copper electrodeposition indicated that the electrode surface became rougher as both concentration and reduction potential increases, and the roughness of the surface was analyzed with UV/VIS spectrophotometer.

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Highly Efficient Thermal Plasma Scrubber Technology for the Treatment of Perfluorocompounds (PFCs) (과불화합물(PFCs) 가스 처리를 위한 고효율 열플라즈마 스크러버 기술 개발 동향)

  • Park, Hyun-Woo;Cha, Woo Byoung;Uhm, Sunghyun
    • Applied Chemistry for Engineering
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    • v.29 no.1
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    • pp.10-17
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    • 2018
  • POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.