• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.105-107
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• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Polymer(Korea)
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• v.32 no.4
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• pp.372-376
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• 2008

Vacuum deposited 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2-TNATA), used as a hole injection (HIL) material in OLEDs, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in the devices. C60-doped 2-TNATA:C60 (20 wt%) film was formed via co-evaporation process and molecular ordering and topology of 2-TNATA:C60 films were investigated using XRD and AFM. The J-V, L-V and current efficiency of multi-layered devices were characterized as well. Vacuum-deposited C60 film was molecularly oriented, but neither was 2-TNATA:C60 film due to the uniform dispersion of C60 molecules in the film. By using C60-doped 2-TNATA:C60 film as a HIL, the current density and luminance of a multi-layered ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al device were significantly increased and the current efficiency of the device was increased from 4.7 to 6.7 cd/A in the present study.

• Tunnel and Underground Space
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• v.24 no.6
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• pp.405-417
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• 2014

In a high-level waste repository, the gap fill of the engineered barrier is an important component that influences the performance of the buffer and backfill. This paper reviewed the overseas status of R&D on the gap fill used engineered barriers, through which the concept of the gap fill, manufacturing techniques, pellet-molding characteristics, and emplacement techniques were summarized. The concept of a gap fill differs for each country depending on its disposal type and concept. Bentonite has been considered a major material of a gap fill, and clay as an inert filler. Gap fill was used in the form of pellets, granules, or a pellet-granule blend. Pellets are manufactured through one of the following techniques: static compaction, roller compression, or extrusion-cutting. Among these techniques, countries have focused on developing advanced technologies of roller compression and extrusion-cutting techniques for industrial pellet production. The dry density and integrity of the pellet are sensitive to water content, constituent material, manufacturing technique, and pellet size, and are less sensitive to the pressure applied during the manufacturing. For the emplacement of the gap fill, pouring, pouring and tamping, and pouring with vibration techniques were used in the buffer gap of the vertical deposition hole; blowing through the use of shotcrete technology and auger placement and compaction techniques have been used in the gap of horizontal deposition hole and tunnel. However, these emplacement techniques are still technically at the beginning stage, and thus additional research and development are expected to be needed.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.4
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• pp.287-297
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• 2014

For several decades, many countries operating nuclear power plants have been studying the various disposal alternatives to dispose of the spent nuclear fuel or high-level radioactive waste safely. In this paper, as a direct disposal of spent nuclear fuels for deep geological disposal concept, the rod consolidation from spent fuel assembly for the disposal efficiency was considered and analyzed. To do this, a concept of spent fuel rod consolidation was described and the related concepts of disposal canister and disposal system were reviewed. With these concepts, several thermal analyses were carried out to determine whether the most important requirement of the temperature limit for a buffer material was satisfiedin designing an engineered barrier of a deep geological disposal system. Based on the results of thermal analyses, the deposition hole distance, disposal tunnel spacing and heat release area of a disposal canister were reviewed. And the unit disposal areas for each case were calculated and the disposal efficiencies were evaluated. This evaluation showed that the rod consolidation of spent nuclear fuel had no advantages in terms of disposal efficiency. In addition, the cooling time of spent nuclear fuels from nuclear power plant were reviewed. It showed that the disposal efficiency for the consolidated spent fuel rods could be improved in the case that cooling time was 70 years or more. But, the integrity of fuels and other conditions due to the longer term storage before disposal should be analyzed.

• Tunnel and Underground Space
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• v.11 no.3
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• pp.257-269
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• 2001

Numerical simulation is performed to understand the structural behavior of an underground radwaste repository, assumed to be located at the depth of 500 m, in a granitic rock mats, in which a fault intersects the roof of the repository cavern. Two dimensional universal distinct element code, UDEC is used in the analysis. The numerical model includes a granitic rock mass, a canister with PWR spent fuels surrounded by the compacted bentonite inside the deposition hole, and the mixed bentonite backfilled in the rest of the space within the repository cavern. The structural behavior of three different cases, each case with a fault of an angle of $33^{\circ},\;45^{\circ},\;and\;58^{\circ}$ passing through the cavern roof-wall intersection, has been compared. And then fro the case with the $45^{\circ}$ fault, the hydro-mechanical, thermo-mechanical, and thermo-hydro-mechanical interaction behavior have been studied. The effect of the time-dependent decaying heat, from the radioactive materials in PWR spent fuels, on the repository and its surroundings has been studied. The groundwater table is assumed to be located 10m below the ground surface, and a steady state flow algorithm is used.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.210.2-210.2
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• 2013

현재 국내의 상용화된 디지털 방식 X-선 영상장치에서 간접변환방식은 대부분 CsI를 사용하고 있으며, X-선 흡수에 의해 전기적 신호를 발생시키는 직접변환방식은 Amorphous Selenium(a-Se)을 사용한다. a-Se은 진공 중에 녹는점이 낮아 증착시 substrate의 온도에 따라 민감한 변화를 보인다. 본 연구에서는 간접변환방식에 비해 높은 영상의 질을 획득할 수 있는 직접변환방식의 a-Se기반 X-선 검출기 제작 시 substrate에 인가된 온도에 따른 특성을 연구하여 최적화 된 substrate의 온도를 알고자 한다. 본 실험에서는 glass에 투명한 전극물질인 Indium Tin Oxide (ITO)가 electrode로 형성된 substrate를 사용하였으며 그 상단에 a-Se을 Physical Vapor Deposition (PVD)방식을 거쳐 X-선 검출기 샘플을 제작하였다. PVD 공정 시 네 개의 보트에 a-Se 시료를 각각 100g씩 총 400g을 넣고, $5{\times}10-5Torr$까지 진공도를 낮추었다. 보트의 온도는 $270^{\circ}C$에서 40분 $290^{\circ}C$에서 90분으로 온도를 인가하여 a-Se을 기화시켜 증착하였다. 증착 시 substrate 온도를 각각 $20^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, $70^{\circ}C$ 네 종류로 나누어 실험을 진행하였다. 끝으로 증착된 a-Se 상단에 Au를 PVD방식으로 electrode를 형성시켜 a-Se기반의 X-선 검출기 샘플 제작을 완료하였다. 제작된 a-Se기반의 X-선 검출기 샘플의 두께는 80에서 $85{\mu}m$로 온도에 따른 차이가 없었다. 이후에 전기적 특성을 평가하기위해 electrometer와 oscilloscope를 이용하여 Dark current와 Sensitivity를 측정하여 Signal to Noise Ratio(SNR)로 도출하였으며 Scanning Electron Microscope(SEM) 표면 uniformity를 관찰하였다. 또한 제작된 a-Se기반 X-선 검출기 샘플의 hole collection 성능을 확인하고자 mobility를 측정하였다. 측정결과 a-Se의 work function을 고려한 $10V/{\mu}m$기준에서 70kV, 100mA, 0.03sec의 조건의 X-선을 조사 하였을 때 Sensitivity는 세 종류의 검출기 샘플이 15nC/mR-cm2에서 18nC/mR-cm2으로 비슷한 양상을 나타내었지만, substrate온도가 $70^{\circ}C$때의 샘플은 10nC/mR-cm2이하로 저감됨을 알 수 있었다. 그리고 substrate온도 $60^{\circ}C$에서 제작된 검출기 샘플의 전기적 특성이 SNR로 환산 시, 15.812로 가장 우수한 전기적 특성을 나타내어 최적화 된 온도임을 알 수 있었다. SEM촬영 시 온도상승에 따라 표면 uniformity가 우수하였으며, Mobility lifetime에서는 $60^{\circ}C$에서 제작된 검출기 샘플이 deep trap 수치가 높아 hole이 $0.04584cm2/V{\cdot}sec$로 $0.00174cm2/V{\cdot}sec$의 electron보다 26.34배가량 빠른 것을 확인하였다. 본 연구를 통해 a-Se증착 시, substrate에 인가된 온도는 균일한 박막의 형성 및 표면구조에 영향을 미치며 온도가 증가할수록 안정적인 전기적 특성을 나타내지만 $70^{\circ}C$이상일 시, a-Se층의 결정화가 생겨 deep trap을 발생시켜 전기적 특성이 저하됨을 확인 할 수 있었다. 따라서 증착 시의 substrate의 온도 최적화는 a-Se기반 X-선 검출기의 안전성 및 성능향상을 위해 불가피한 요소가 된다고 사료된다.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.206-212
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• 1997

The reflow characteristics of copper, which is expected to be used as interconnection materials in the next generation semiconductor devices, were investigated. Copper films were deposited on hole and trench patterns by metal organic chemical vapor deposition and annealed in nitrogen and oxygen ambient with the annealing temperatures ranging from $350^{\circ}C$ to $550^{\circ}C$. Copper films were not reflowed into the patterns upon the annealing in nitrogen ambient, but reflowed at the annealing temperature higher than $450^{\circ}C$ in oxygen ambient. It is considered that the reflow takes place as the heat generated by the oxidation of copper liquefies the copper film partly and the liquid copper fills the patterns for minimizing the surface energy and the potential energy. Upon the annealing in oxygen ambient, the copper oxide whose thickness was less than 300$\AA$ formed at the surface of an agglomerate and the resistivity of copper film increased drastically at an annealing temperature of $550^{\circ}C$ due to the copper agglomeration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.309-310
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• 2005

In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.253-256
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• 2006

The blue emitting OLEDs using GDI host-dopant phosphors have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)- triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, blue color emission layer was deposited using GDI602 as a host material and GDI691 as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/GDI602:GDI691/Alq3/LiF/Al were obtained by in-situ deposition of Alq3, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Blue OLEDs fabricated in our experiments showed the color coordinate of CIE(0.14, 0.16) and the maximum power efficiency of 1.1 lm/W at 11 V with the peak emission wavelength of 464 nm.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.71-75
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• 2006

The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm.