• Title/Summary/Keyword: Deposited material

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A Study on properties of ZnO thin film for Film Bulk Acoustic Resonator (FBAR) application (FBAR 응용을 위한 ZnO 박막의 특성에 대한 연구)

  • Jeong, Young-Hak;Lee, Kyu-Il;Kim, Eun-Kwon;Lee, Jong-Duk;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.688-692
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    • 2004
  • In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.

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Characteristics of ITO/polymeric Films with Change of Oxygen Partial Pressure (산소분압의 변화에 따른 ITO/polymeric 박막의 특성)

  • 신성호;김현후
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.846-851
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    • 2004
  • Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

Characteristic of ITO thin film with plasma surface treatment (플라즈마 표면 처리에 의한 ITO 박막 제작 특성)

  • Kim, Sang-Mo;Son, In-Hwan;Park, Sang-Joon;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.404-405
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    • 2007
  • Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

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RF Power dependence in $YMnO_3$/Si(100) Structures ($YMnO_3$/Si(100) 구조의 RF Power 의존성)

  • 김진규;정순원;김용성;이남열;정상현;김광호;유병곤;이원재;유인규
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.755-758
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    • 2000
  • YMnO$_3$films have been deposited with different Rf powers of 60W, 80W, 100W, and 120W. The structural properties of YMnO$_3$films on Si(100) were analysed by XRD(X-ray diffraction). The c-axis oriented peaks of YMnO$_3$were observed deposited in YMnO$_3$/Si(100) structure of RF power at 87$0^{\circ}C$ in oxygen ambient, and the peaks were enlarged by increasing The RF powers. The dielectric constant of the film deposited at 100W and 120W of RF power were about 19, 20 respectively.

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EFFECT OF Al UNDERLAYER ON THE MICROSTRUCTURES OF CoCrTa/Cr FILMS

  • Chang, H.S.;Shin, K.H.;Lee, T.D.;Park, J.K.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.614-617
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    • 1995
  • Thin CoCrTa/Cr films were deposited on glass substrates at $280^{\circ}C$ with or without Al underlayer. The coercivity of CoCrTa increased considerably by introducing an Al underlayer. The grain size of Cr thin film deposited on Al underlayer became smaller than that of Cr thin film deposited on glass substrate. The grain size of CoCrTa thin film was determined by Cr grain size. The cause of the coercivity increase seems to be associated with the refinement and uniform distribution of CoCrTa grains.

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The Effect of High Velocity Oxygen Fuel Thermal Spray Coating on Fatigue Crack Growth Behavior for Welded SM490B (SM490B 용접부의 피로균열 성장 거동에 미치는 초고속 용사코팅 효과)

  • Yoon, Myung-Jin;Choi, Sung-Jong;Cho, Won-Ik
    • Transactions of the Korean Society of Automotive Engineers
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    • v.14 no.4
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    • pp.99-106
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    • 2006
  • High velocity oxygen-fuel thermal spray coating of the WC-Co cermet material is a well-established process for modifying the surface properties of the structural components exposed to the corrosive and wear attacks, and also these coating are well-known method to improve the fatigue strength of material. In this study, HVOF coated SM490B are prepared to evaluation of the effect of coating on tension and fatigue crack growth behavior. The pre-crack of the fatigue crack growth test specimens machined at deposited material area, heat affected zone and boundary, respectively. Through these test, the following results are obtained: 1) Tensile strength was about 498 MPa, and fracture occurred on base metal area. 2) The fatigue crack of coated specimens propagated more rapidly than non-coated specimen in all specimens. 3) In the same coating thickness specimens, the specimens with pre-crack at boundary more rapidly propagated than the specimens with pre-crack at HAZ and deposited material area. These results can be used as basic data in a structural integrity evaluation of rolled SM490B weldments considering HVOF coating.

[ LiCoO2 ] Thin Film Deposited by Bias Sputtering Method I. Electrochemical Characteristics (바이어스 스퍼터링 법으로 제조된 LiCoO2박막 I. 전기화학적 특성)

  • Lee, Y.J.;Park, H.Y.;Cho, W.I.;Cho, B.W.;Kim, K.B.
    • Journal of the Korean Electrochemical Society
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    • v.6 no.4
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    • pp.261-265
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    • 2003
  • The heat treatment process of thin film microbatteries manufacturing processes has several Problems. This study, without heat treatment, considered the characteristics of $LiCoO_2$ thin films deposited by bais sputtering method inducing the structural change of the thin film. The properties of deposited $LiCoO_2$ thin films such as crystal structure, morphology, and discharge capacity were observed by various analysis methods. Among $LiCoO_2$ thin films deposited by substrate bias $voltage(V_b)$, the one deposited by substrate bias voltage of -50V had the highest initial discharge capacity of about $60{\mu}Ah/cm^2{\mu}m.$ We confirmed that $LiCoO_2$ thin film could be used as cathode material of lithium thin film microbatteries without annealing.

The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions (원거리 플라즈마 화학기상증착법을 사용하여 증착한 비정질 탄화규소 막의 증착조건에 따른 특성 및 증착 균일도 변화)

  • Cho, Sung-Hyuk;Choi, Yoo-Youl;Choi, Doo-Jin
    • Journal of the Korean Ceramic Society
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    • v.47 no.3
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    • pp.262-267
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    • 2010
  • a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.

Study on RF power dependence of BST thin film by the different substrates (기판에 따른 BST 박막의 RF Power 의존성)

  • 최명률;이태일;박인철;김홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.22-25
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    • 2002
  • In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

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Thermal Stability of the Interface between TaN Deposited by MOCVD and Electroless-plated Cu Film (MOCVD 방법으로 증착된 TaN와 무전해도금된 Cu박막 계면의 열적 안정성 연구)

  • 이은주;황응림;오재응;김정식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1091-1098
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    • 1998
  • Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

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