• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.1
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• pp.30-35
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• 2016

Tandem arc welding is a guarantor for high efficiency and cost saving since the quantity of wire which is deposited in the welding is approximated 30% greater that in conventional welding. The welding process is now being successfully applied in many industries. However, in the case of tandem arc welding, good quality and high productivity should depend on the welding parameters. Therefore, an intelligent algorithms for the automatic tandem arc welding process has been necessarily required. In this study, a predictive model based on the neural network by using the data acquired during tandem gas metal arc (GMA) welding process has been developed. To verify the reliability of the developed predictive model, a mutual comparison with the surface of the top-bead width obtained from actual experiments has been analyzed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.2
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• pp.139-146
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• 2014

Sodium borohydride ($NaBH_4$) is considered as a secure metal hydride for hydrogen storage and supply. In this study, the interfacial friction of two-phase flow in the dehydrogenation of aqueous $NaBH_4$ solution in a microchannel with a hydraulic diameter of $461{\mu}m$ is investigated for designing a dehydrogenation chemical reactor flow passage. Because hydrogen gas is generated by the hydrolysis of $NaBH_4$ in the presence of a ruthenium catalyst, two different flow phases (aqueous $NaBH_4$ solution and hydrogen gas) exist in the channel. For experimental studies, a microchannel was fabricated on a silicon wafer substrate, and 100-nm ruthenium catalyst was deposited on three sides of the channel surface. A bubbly flow pattern was observed. The experimental results indicate that the two-phase multiplier increases linearly with the void fraction, which depends on the initial concentration, reaction rate, and flow residence time.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.3
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• pp.233-240
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• 2014

In this study, we investigated the dispersion characteristics of guided waves in thin films. Dispersion curves are essential for understanding not only the behavior of ultrasonic waves, but also the mechanical properties of thin films. Matrix techniques are presented for modeling ultrasonic waves in multilayered structures before being used to calculate the dispersion curves for Al-steel and Al-composite specimens. When compared with the dispersion curves obtained using the commercial program (Disperse), the dispersion curves generated from the transfer matrix method show its validity. These developed methods are used to obtain dispersion curves for Al thin films deposited on a Si substrate. The resulting dispersion curves enable observation of both dispersive and non-dispersive behavior for the guided waves, depending on the thickness of the thin films.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.453-458
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• 2009

SiOC film was deposited by the chemical vapor deposition using BTMSM and oxygen mixed precursor. The characteristic of SiOC film varied with increasing of the gas flow rate ratios. The dielectric constant was obtained by C-V measurement using the structure of metal/SiOC film/Si. The space effect due to the steric hindrance between alkyl group at terminal bond of Si-$CH_3$ made the pores, and increased the thickness. However, the SiOC film due to the lowering of the polarization decreased the thickness and then decreased the dielectric constant. After annealing process, the dielectric constant decreased because of the evaporation of the OH or $H_2O$ sites. The thickness was related to the lowering of the dielectric constant by the reduction of the polarization and the thickness decreased with the decrease of the dielectric constant. The refractive index was in inverse proportion to thickness. The trends of the thickness and refractive index did not change after annealing.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.435-439
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• 2009

The reason of lowering the dielectric constant of SiOC film was studied using parameters obtained from C-V measurement and refractive index. SiOC film was formed by the force of ionic bonding during the recombination of dissociated gases. Generally, the dielectric constant was obtained from the square of the refractive index or C-V measurement using the metal/insulator/Si structure. The dielectric constant consists of the ionic and electronic elements. It was researched about the dielectric constant of SiOC film using the average of the ionic and electronic elements. The dielectric constant decreased after annealing process. As deposited films trended toward the dielectric constant consisted of most ionic elements, on the other hand, annealed films mostly consisted of electronic elements. Because the effect of ionic elements reduced after annealing. Consequently, it was found that the electronic effect of SiOC film increased and the ionic effect of SiOC film decreased by the after-annealing.

• Economic and Environmental Geology
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• v.31 no.4
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• pp.277-290
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• 1998

The purpose of this research is to investigate the dispersion pattern of gold during skarnization and genesis of gold mineralization in the Sangdong skarn deposits. The Sangdong scheelite orebodies are embedded in the Cambrian Pungchon Limestone and limestone interbedded in the Myobong Slate of the Cambrian age. The tungsten deposits are classified as the Hangingwall Orebody, the Main Orebody and the Footwall Orebody as their stratigraphic locations. Recently, the Sangdong granite of the Cretaceous age (85 Ma) were found by underground exploratory drillings below the orebodies. In geochemisty, the W, Mo, Bi and F concentrations in the granite are significantly higher than those in the Cretaceous granitoids in southern Korea. Highest gold contents are associated with quartz-hornblende skarn in the Main Orebody and pyroxene-hornblende skarn in the Hangingwall Orebody. Also Au contents are closely related to Bi contents. This could be inferred that Au skarns formed from solutions under reduced environment at a temperature of $270^{\circ}C$. According to the multiple regression analysis, the variation of Au contents in the Main Orebody can be explained (87.5%) by Ag, As, Bi, Sb, Pb, Cu. Judging from the mineralogical, chemical and isotope studies, the genetic model of the deposits can be suggested as follows. The primitive Sangdong magma was enriched in W, Mo, Au, Bi and volatiles (metal-carriers such as $H_2O$, $CO_2$ and F). During the upward movement of hydrothermal ore solution, the temperature was decreased, and W deposits were formed at limestone (in the Myobong Slate and Pungchon Limestone). In addition, meteoric water influx gave rise to the retrogressive alterations and maximum solubility of gold, and consequently higher grade of Au mineralization was deposited.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.976-979
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.