• Title/Summary/Keyword: Deposited Metal

Search Result 1,100, Processing Time 0.037 seconds

Assessment of Metal Pollution of Road-Deposited Sediments and Marine Sediments Around Gwangyang Bay, Korea (광양만 내 도로축적퇴적물 및 해양퇴적물의 금속 오염 평가)

  • JEONG, HYERYEONG;CHOI, JIN YOUNG;RA, KONGTAE
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
    • /
    • v.25 no.2
    • /
    • pp.42-53
    • /
    • 2020
  • In this study, heavy metal in road-deposited sediments (RDS) and marine sediment around Gwangyang Bay area have been investigated to assess the pollution status of metals and to understand the environmental impact of RDS as a potential source of metal pollution. Zn concentration for <63 ㎛ size fraction was the highest (2,982 mg/kg), followed by Cr, Ni, Pb, Cu, As, Cd, and Hg. Metal concentrations in RDS increased with decreasing particle size and relatively higher concentrations were observed around the metal waste and recycling facilities. For particle size in RDS smaller than 125 ㎛, EF values indicated that Zn was very high enrichment and Cr, Cd, Pb were significant enrichment. The concentrations of metals in marine sediments were mostly below the TEL value of sediment quality guidelines of Korea. However, the Zn concentrations has increased by 30~40% compared to 2010 year. The amounts of Zn, Cd and Pb in less than 125 ㎛ fraction where heavy metals can be easily transported by stormwater runoff accounted for 54% of the total RDS. The study area was greatly affected by Zn pollution due to corrosion of Zn plating materials by traffic activity as well as artificial activities related to the container logistics at Gwangyang container terminal. The fine particles of RDS are not only easily resuspended by wind and vehicle movement, but are also transported to the surrounding environments by runoff. Therefore, further research is needed on the adverse effects on the environment and ecosystem.

The effects of Cu thin films sputter deposited at 5 and 100 mtorr on the adhesion between Cu/Cr film and polyimide (5, 100 mtorr의 증착압력에서 스퍼터 증착한 구리박막층이 Cu/Cr 박막과 폴리이미드 사이의 접착력에 미치는 영향)

  • 조철호;김영호
    • Journal of the Korean institute of surface engineering
    • /
    • v.29 no.3
    • /
    • pp.157-162
    • /
    • 1996
  • The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

  • PDF

Resistance Switching Mechanism of Metal-Oxide Nano-Particles Memory on Graphene Layer

  • Lee, Dong-Uk;Kim, Dong-Wook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.318-318
    • /
    • 2012
  • A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

  • PDF

Cold Cracking Susceptibility in Weld Metal of High Strength-Toughness Steel (고강도 고인성강 용접금속의 저온균열 감수성에 관한 연구)

  • 이종봉;안상곤;안영호;김영우
    • Journal of Welding and Joining
    • /
    • v.13 no.4
    • /
    • pp.46-54
    • /
    • 1995
  • The cold cracking susceptibility of a variety of weld metals deposited by GMAW with several kinds of commercial solid wires for high strength-toughness steel was investigated. G-BOP test and LB-TRC test were carried out to study the effects of preheat, chemical composition and hydrogen level on the weld metal cold cracking. The results obtained are as follows. 1) 10% CPT obtained by G-BOP test was the most valuable criteria for evaluating the cold cracking susceptibility of weld metals compared with percentage of cracking at room temperature and crack free temperature, and it had good correlation with the results of LB-TRC test. 2) Cold cracking susceptibility of weld metals was high in the row of MG100A, MG100C, MG100D and MG100B. Welds deposited with MG130 and MG80 showed similar icidents of cracking with MG100C and MG100B respectively, even though their strength levels were different. 3) Diffusible hydrogen level in weld metals which has good relation with hydrogen content in wire itself was the most critical factor for controlling the cold cracking susceptibility of weld metal.

  • PDF

Microstructure and Impact Toughness of Weld Metal in Multipass Welded Super Duplex Stainless Steel (다층용접한 슈퍼 듀플렉스 스테인리스강 용접금속의 조직 및 충격인성)

  • Seo, Won-Chan;Park, Chan;Bang, Kook-Soo
    • Journal of Ocean Engineering and Technology
    • /
    • v.26 no.6
    • /
    • pp.27-32
    • /
    • 2012
  • The effects of reheating during welding on the microstructure and impact toughness of weld metal in 25% Cr super duplex stainless steels were investigated. Using different heat inputs, weld metals with different reheated regions were obtained. This showed that, depending on the reheating temperature, the microstructure in the reheated region was quite different from that of the as-deposited microstructure. When reheated into the ${\gamma}+{\alpha}$ temperature range, fine intragranular austenite was formed in the as-deposited columnar structure. However, when reheated above the ${\alpha}$ solvus temperature range, most of the columnar structure disappeared and fine equiaxed austenite and ferrite were formed. Because of the larger amount of fine austenite in the reheated region, a higher impact toughness was obtained in the weld metal with a higher amount of reheated region.

Structure of Ti and Al Films Prepared by Cylindrical Sputtering System (원통형 스퍼터링 장치로 제작한 Ti 및 Al 박막구조)

  • Oh, Chang-Sup;Han, Chang-Suk
    • Korean Journal of Materials Research
    • /
    • v.24 no.7
    • /
    • pp.344-350
    • /
    • 2014
  • Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

A Study on the Electrical Properties of Organic Ultra Thin Films for Nanoscale Device Manufacture (나노스케일 소자제작을 위한 유기초박막의 전기적특성에 관한 연구)

  • Song, Jin-Won;Han, Chang-Su;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.07a
    • /
    • pp.384-385
    • /
    • 2005
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of mono layers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed a and the molecular area $A_m$. Compression speed a was about 30, 40, 50mm/min. also, LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9 ~ 21 and we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V.

  • PDF