• 한국염색가공학회지
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• 제13권5호
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• pp.306-311
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• 2001

Natural colorants haute attracted much attention all over the world because of their non-hazardous nature. The world is becoming increasingly aware of environmental Issues, such as ozone layer depletion, water pollution and waste disposal problems. The use of synthetic dyestuffs for their synthesis and application in the dyeing industries has been criticized due to introduction of contaminants into the environment. This has led to the desire to turn to the traditional, and more natural way of life. In this study, the colorants of extract of Ginkgo biloba bark were analysed and their dyeing properties on silk, wool and cotton were studied. It was found that uv-visible absorption spectra of extract of Ginkgo biloba bark showed two strong absorption Peaks in the range of 240 ∼400 In. From the result of IR spectra, the major ingredient of extract of Gikgo biloba bark seems to be the flavon which is one of the flavonoid derivatives. Silk, wool, and cotton dyed with the extract of Ginkgo biloba bark showed a reddish yellow color. Their color differences were increased drastically with repetition of dyeing by three times.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.179-182
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• 2007

Polycrystaline (poly) 3C-SiC thin film on n-type and p-type Si were deposited by APCVD using HMDS, $H_2$, and Ar gas at $1180^{\circ}C$ for 3 hour. And then the schottky diode with Au/poly 3C-Sic/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) value were measured as 0.84 V, over 140 V, 61nm, and $2.7{\times}10^{19}\;cm^3$, respectively. The p-n junction diode fabricated by poly 3C-SiC was obtained like characteristics of single 3C-SiC p-n junction diode. Therefore, its poly 3C-SiC thin films are suitable MEMS applications in conjuction with Si fabrication technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.101-104
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• 1989

Thermal Electet of the Zinc Oxide varistor has been studied in the temperature range of -130~200[$^{\circ}C$] and the electric field of 6[kV/m]. It appears that there are four peaks of thermally stimulated current; $\alpha$, $\beta$, ${\gamma}$ and $\delta$ spectra appearing at the temperature range of 160, 130, 20 and -30[$^{\circ}C$], respectively. It seems that the origin of $\alpha$, $\beta$, ${\gamma}$ and $\delta$ peaks are associated with the depolarization of donor ions in the depletion layer, the detrapping of trapped electron in the surface, the detrapping of trapped electron in the donor level and the detrapping of trapped electron between grain and intergranular, respectively.

• 전자공학회논문지D
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• 제36D권4호
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• pp.70-76
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• 1999

Punchthroush 원통형 접합의 항복전압에 대한 해석적 모델을 에피층의 두께와 nonpunchthrough 원통형 접합의 항복시 임계공핍영역폭이 함수로 제안하였다. 이 해석적 모델에서의 모든 거리변수와 전계 및 전위식을 정규화된 형태로 사용하므로써 항복전압을 소자의 물리적 parameter에 관계없이 쉽게 결정할 수 있게 하였다. 제안된 모델의 계산결과를 2차원 소자 Simulation Program인 MEDICI를 사용하여 얻은 결과와 비교하여 매우 잘 일치함을 보였다.

• 천문학회보
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• 제37권1호
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• pp.70.1-70.1
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• 2012

CQUEAN (Camera for QUasars in EArly uNiverse)은 초기우주천체 연구단(Center for Exploration of Origin of the Universe) 사업에서 개발한 CCD 카메라로서 초기우주의 퀘이사 후보를 찾기 위한 목적으로 설계되었다. CCD를 구동할 때는 픽셀 다이오드의 PN 접합층에 공핍층(depletion layer)을 생성하기위해 역 바이어스 전압을 준다. 이 전압에 의해 CCD를 사용한 관측 시 광이온화와 열이온화 현상에 의해 생성된 전자의 전하값에 추가로 바이어스 값이 읽혀진다. 정확한 CCD 측광 결과를 얻어내기 위해서는 안정된 바이어스를 유지해야 한다. 본 연구에서는 향후 CQUEAN의 보다 정확한 관측 및 데이터 처리에 대비하여 CQUEAN의 바이어스 특성을 분석하여 이 값에 영향을 주는 요인을 찾고 해결책을 논의한다.

• ALGAE
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• 제31권4호
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• pp.403-414
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• 2016

The use of ionizing radiation and radioactive elements is becoming increasingly popular with the rapid developments in nuclear technology, radiotherapy, and radio diagnostic methods. However, ionizing radiation can directly or indirectly cause life-threatening complications such as cancer, radiation burns, and impaired immunity. Environmental contamination with radioactive elements and the depletion of ozone layer also contribute to the increased levels of radiation exposure. Radioprotective natural products have particularly received attention for their potential usefulness in counteracting radiation-induced damage because of their reduced toxicity compared with most drugs currently in use. Moreover, radioprotective substances are used as ingredients in cosmetic formulations in order to provide protection against ultraviolet radiation. Over the past few decades, the exploration of marine algae has revealed the presence of radioprotective phytochemicals, such as phlorotannins, polysaccharides, carotenoids and other compounds. With their promising radioprotective effects, marine algae could be a future source for discovering potential radioprotective substances for development as useful in therapeutics.

• 전자공학회논문지A
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• 제32A권8호
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.17-22
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• 2001

The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

• 한국표면공학회지
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• 제29권6호
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• pp.607-614
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• 1996

Yttrium(Y) coating was incorporated by ion-plating method either directly on the TiAl substrate or after pack aluminizing on TiAl to improve the oxidation resistance of TiAl alloy. After Y-coating, heat treatment at low oxygen partial pressure was carried out. Performance of various coating was evaluated by isothermal and cyclic oxidation tests. A simple Y-coating without pack aluminizing can give a detrimental effect on the. oxidation resistance of TiAl alloy, because it enhances formation of $TiO_2$. On the other hand, a composite coating of aluminide-yttrium has shown excellent oxidation resistance. A continuous protective $Al_2O_3$ scale is formed on the aluminized TiAl, and Y-coating improves $Al_2O_3$ scale adherence and substantially prevents depletion of Al in the aluminide-coating layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.817-820
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• 1988

Thermal Electet of the Zinc Oxide varistor has been studied in the temperature range of -130${\sim}200[^{\circ}C]$ and the electric field of 6[kV/m]. It appears that there are four peaks of thermally stimulated current; ${\alpha},\;{\beta},\;{\gamma}$ and ${\delta}$ spectra appearing at the temperature range of 160, 130, 20 and $-30[^{\circ}C]$, respectively. It seems that the origins of ${\alpha},\;{\beta},\;{\gamma}$ and ${\delta}$ peaks are associated with the depolarization of donor ions in the depletion layer, the detrapping of trapped electron in the surface, the detrapping of trapped electron in the donor level and the detrapping of trapped electron between grain and intergranular, respectively.