• 대한기계학회논문집B
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• 제30권6호
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• pp.560-567
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• 2006

Although various conjectures have been proposed to explain abnormal increase in thermal conductivity of nanofluids, the detailed mechanism could not be understood and explained yet. The main reason is primarily due to the lack of knowledge on the most fundamental factor governing the mechanisms such as Brownian motion, liquid layering, phonon transport, surface chemical effects and agglomeration. By applying surface complexation model for the measurement data of hydrodynamic size, zeta potential, and thermal conductivity, we have shown that sulfate charge state is mainly responsible for the increase in the present condition and may be the factor incorporating all the mechanisms as well. Moreover, we propose a new model including concepts of fractal and interfacial layer. The properties such as thickness and thermal conductivity of the layer are estimated from the surface charge states and the concept of electrical double layer. With this, we could demonstrate the pH dependences of the layer properties and eventually of the effective thermal conductivity of the nanofluid.

• 대한기계학회논문집B
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• 제21권12호
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• pp.1710-1719
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• 1997

An approximate analytical solution for the initial transient process of close-contact melting occurring between a phase change material kept at its melting temperature and an isothermally heated flat surface is derived. The model is so developed that it can cover both rectangular and circular cross-sectional solid blocks. Normalization of simplified model equations in reference to the steady solution enables the solution to be expressed in a generalized form depending on the liquid-to-solid density ratio only. A selected result shows an excellent agreement with the previously reported numerical data, which justifies the present approach. The solution appears to be capable of describing all the fundamental characteristics of the transient process. In particular, dependence of the solid descending velocity oft the density ratio at the early stage of melting is successfully resolved. The effects of other parameters except the density ratio on the transient behaviors are efficiently represented via the steady solution implied in the normalized result. A simple approximate method for estimating the effect of convection on heat transfer across the liquid film is also proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.187-187
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• 한국분말재료학회지
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• 제30권3호
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• pp.210-216
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• 2023

In this study, machine learning models are proposed to predict the Vickers hardness of AlSi10Mg alloys fabricated by laser powder bed fusion (LPBF). A total of 113 utilizable datasets were collected from the literature. The hyperparameters of the machine-learning models were adjusted to select an accurate predictive model. The random forest regression (RFR) model showed the best performance compared to support vector regression, artificial neural networks, and k-nearest neighbors. The variable importance and prediction mechanisms of the RFR were discussed by Shapley additive explanation (SHAP). Aging time had the greatest influence on the Vickers hardness, followed by solution time, solution temperature, layer thickness, scan speed, power, aging temperature, average particle size, and hatching distance. Detailed prediction mechanisms for RFR are analyzed using SHAP dependence plots.

• Journal of the Korean Wood Science and Technology
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• 제17권2호
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• pp.26-33
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• 1989

The acoustic absorption coefficient and acoustic impedance of 5 species of softwood(sonamoo, sam namoo, gusang namoo, hwaback, sitka spruce) and 5 species of hardwood (Mulgusul namoo, Italian popular, white meranti, red meranti, kalantas) were measured by the standing wave method. which is simple in the setup and gives more accurate result than does any other measuring method. The dependence of the absorption coefficient and complex acoustic impedance on the wood sections. thickness of the sample itself and the back air gap was investigated experimentally in the frequency range from 200Hz to 1800Hz, and the result are as follows: 1. The acoustic absorption coefficient of wood sections was higher on the cross section than radial and tangential sections. 2) The acoustic absorption coefficient were higher in the frequency range from 400Hz to 600Hz, but decreased in the frequency above 600Hz. 3. The genenal tendency of the variation of the normal acoustic impedance was increased according to the frequency. 4. The acoustic absortion coefficient was increased in the to 7mm-thick sample and decreased in 9mm-thick sample. 5. The higher acoustic absorption coefficient was shown in the case with the backing an gap than in the case without the gap.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1498-1501
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• 1996

To evaluate insulating properties of polyimide thin film on high temperature over $100\;^{\circ}C$, polyimide film were prepared by electrophoretic deposition onto metal surface from nonaqueous emulsion. The emulsion is made by adding a solution of the resin to a precipitant, which is an organic liquid compeltely miscible with the solvent of the organic resin solution, but which does not dissolve the resin. The polyimide film obtained by annealing shows good insulation properties of 5.8 MV/cm at elevated temperature and breakdown strength of the film reveals thickness dependence.

• Journal of Magnetics
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• 제8권2호
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• pp.89-92
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• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• Nuclear Engineering and Technology
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• 제50권8호
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• pp.1364-1371
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• 2018

An extensive investigation of photon interaction properties has been made for $Zn_xTe_{100-x}$ alloys (where x = 5, 20, 30, 40, 50) to explore its possible use in sensing and shielding gamma radiations. The results show better and stable response of ZnTe alloys for various photon interaction properties over the wide energy range, with an additional benefit of ease in fabrication due to lower melting points of Zn and Te. Mass attenuation coefficient values show strong dependence on photon energy as well as composition. Effective atomic number has maximum value for $Zn_5Te_{95}$ and lowest for $Zn_{50}Te_{50}$ in the entire energy region. The alloy sample with maximum $Z_{eff}$ shows minimal value of $N_e$ and vice versa. Mean free path follows inverse trend as observed for mass attenuation coefficient. The exposure and energy absorption buildup factors depend upon photon energy, penetration thickness and composition (effective atomic number) of $Zn_xTe_{100-x}$ alloys. It finds its application for sensing and shielding from highly energetic and highly penetrating photons at sites where radioactive materials were used and visibility of material is not a big constraint. Further, energy down conversion property of ZnTe alloys with subsequent emission in green band suggests its potential use in sensing gamma photons.