• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• 한국응용곤충학회지
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• 제57권1호
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• pp.51-52
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• 2018

과실파리류는 국내 60종의 검역 해충 가운데 42종을 차지하고 있다. 이들 대부분은 자연계 산물인 methyl eugenol (ME) 또는 raspberry ketone에 특이적으로 유인된다. 이들 유인물질을 파라핀 왁스를 이용하여 제형화하였고, 이를 대만에서 야외 유인 효과를 검증하였다. 이들 왁스제형은 모두 델타트랩에 설치하고 8월 말경에 모니터링 한 결과 ME 왁스 제형은 오리엔탈과실파리(Bactrocera dorsalis)를 매일 60-80 마리 포획하였다. 반면에 Cuelure 왁스제형은 오이과실파리(Bactrocera cucurbitae)와 B. tau를 유인하였다. 이러한 결과는 본 왁스제형이 이들 검역 해충에 대한 국내 모니터링에 응용될 수 있다는 것을 제시하고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• 한국응용곤충학회지
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• 제60권2호
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• pp.185-191
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• 2021

농림축산검역본부는 해외해충 연구를 위해 밀폐능력을 갖춘 검역해충실험동을 구축하였다. 연구실험실로써 검역해충실험동의 적합성을 확인하기 위해 파밤나방을 이용하여 해충사육, 연구, 밀폐기능을 검증하였다. 해충사육 기능검증에서 한 세대의 파밤나방 완성에 필요한 온도별 생활사는 25℃에서 32.2일이 소요되었으며, 알 부화율은 80%, 유충 용화율은 86.6%, 번데기 우화율은 90%로 조사되었다. 연구기능 검증에서 살포법과 침지법을 이용하여 2종의 살충제(풀룩사메타마이드와 히드라메칠론)에 대한 고도의 유충 감수성을 확인하였다. 밀폐기능 검증에서는 겨울 동안 수행된 검역해충실험동의 유출시험에서 외부에 설치된 성페로몬 트랩에 파밤나방 수컷성충이 포획되지 않아 성충 유출은 없었다. 본 연구결과를 바탕으로 해외해충에 대한 다양한 연구가 검역해충실험동에서 가능할 것으로 판단된다.

• 한국진공학회지
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• 제10권1호
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• pp.44-50
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• 2001

전자빔증착법과 이온빔의 도움을 받는 전자빔 증착법(ion beam assisted electron beam deposition; IBAED)법으로 비정질 Si(-200nm) 박막을 p-Si 기판위에 성장하고 이 두 구조를 급속열처리산화(Rapid Thermal Oxidation; RTO)를 시킴으로서 $SiO_2$/나노결정 Si(nanocrystal Si)/p-Si구조를 형성하였다. 그 후 시료 위에 Au 막을 증착함으로서 최종적으로 나노결정이 함유된 MOS(metal-oxide-semiconductor)구조를 완성하였다. 이 MOS구조내의 나노결정 Si의 전하충전 특성을 바이어스 sweep 비율을 변화시키면서 Capacitance-Voltage(C-V) 특성을 측정하여 조사하였다. 전자빔증착시료의 경우에는 $\DeltaV_{FB}$(flatband voltage shift)가 1V 미만의 작은 C-V 이력곡선이 관측된 반면 IBAED 시료의 경우는 $\DeltaV_{FB}$가 22V(2V/s Voltage Sweep비율) 이상인 대단히 큰 C-V 이력곡선이 관측되었다. 전자빔증착중 Ar ion beam을 조사하면 표면 흡착원자이동이 활성화되고 따라서 비정질 Si내에 Si의 핵 생성율이 증가하여 후속 급속열처리산화공정중 이 높은 농도의 핵들이 나노결정 Si으로 자라나게 되고 이렇게 형성된 높은 농도의 나노결정의 전하 충전 및 방전현상이 큰 이력곡선을 나타내는 원인이라고 생각된다. 따라서 IBAED 방법이 고농도의 나노결정 Si을 형성시키는데 유용한 방법이라고 판단된다.

• 한국응용곤충학회지
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• 제59권3호
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• pp.217-231
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• 2020

2019년에 서남해안 지역인 고창군의 옥수수 밭 주변에서 성페로몬을 이용하여 열대거세미나방(Spodoptera frugiperda) 성충을 효과적으로 모니터링하는 방법을 조사하였다. 총 함량이 300 또는 1000 ㎍인 2종류 성분 조성의 성페로몬 미끼[(100%) (Z)-9-tetradecenyl acetate and (2%) (Z)-7-dodecenyl acetate]를 설치한 깔대기형 트랩과 델타형 트랩 중에서 열대거세미나방은 300 ㎍ 미끼의 깔대기형 트랩에서 8월 6일에 처음 잡혔고 가장 많이 포획되었다. 또한 깔대기형 트랩 모두에서 비표적 종인 뒷흰가는줄무늬밤나방(Mythimna loreyi)이 많이 포획되었다. 총 함량이 1000 ㎍인 위의 2종류 성분 조성과 4종류 성분 조성의 미끼[(100%) (Z)-9-tetradecenyl acetate, (8%) (Z)-11-hexadecenyl acetate, (2%) (Z)-7-dodecenyl acetate, and (1%) (Z)-9-dodecenyl acetate]를 설치한 날개형 트랩에서 열대거세미나방은 비슷한 수준의 낮은 포획수를 보였으나 뒷흰가는줄무늬밤나방은 4종류 성분 조성의 미끼에서 훨씬 더 많이 포획되었다. 성페로몬 트랩에 포획된 열대거세미나방 70마리의 미토콘드리아 시토크롬 옥시다제 1(CO1)의 부분염기서열(1,004 bp)을 이용하여 계통수를 분석한 결과, 두 개의 종내 변이군으로 나눠졌으며 66마리가 CO1-RS로, 나머지 4마리는 CO1-CS로 분지되었다. 또한 두 개의 CO1 변이군과 기주식물계통(벼, 옥수수)에서 일관되게 차이가 있는 총 12개의 CO1 단일염기다형성(SNP)이 확인되었으며, 전체 73마리 중 4마리만 CO1-CS 그룹(옥수수계통 포함)과 동일한 패턴을 보였으며 나머지 69마리는 CO1-RS그룹(벼계통 포함)과 같았다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Restorative Dentistry and Endodontics
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• 제28권5호
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• pp.402-408
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• 2003

This study was done to present a criterion in selection of the most proper light sources and materials by measuring metamerism index(MI) of the light curing composite resins with spectrocolorimeter. Metamerism is defined when two objects appear to be the same color in one illuminant but different in another. This is due to the fact that they have different spectral curves that fail to match under the second illuminant. In this study, A1 & A3 shade of five light curing composite resins (Esthet-X, Filteck Z250, Filteck A110. Charisma. Vitalescence) were chosen based on Vita shade. Five samples were made for shade of each product with Teflon mold (diameter: 15mm, thickness: 2mm). Metamerism index of each samples on a Barium sulfate plate($L^{*}=96.54,{\;}a^{*}=0.19,{\;}b^{*}=0.01$) prepared for sample fixation were measured with spectrocolorimeter(Miniscan XE plus. Model 4000s. Hunter Lab. USA) by applying standard light source D^{65}, C. Fcw, TL84 and A. Standardization was done with reference standard(X=80.8, Y=85.7, Z=90.8) and light trap. The results were as follows. 1. Different resins with same Vita shade showed recognizable color difference (${\delta}E^{*}>2$). 2. All composites had MI below accepted value 0.5 between standard illuminant(D$_{65}$, C, & A) and below 1.5 under fluorescent condition (Fcw & TL84). 3. MI value between $D^{65}$ and A showed higher value than MI value between other source of light(p<0.01). 4. All resins except Z250 showed MI value that A3 is higher than A1 between $D^{65}$ and A(p<0.05).except Z250 showed MI value that A3 is higher than A1 between $D^{65}$ and A(p<0.05).