• Journal of Radiation Protection and Research
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• 제32권4호
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• pp.178-183
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• 2007

중성자선은 고 LET (linear energy transfer) 방사선으로 X선이나 감마선 등의 저 LET 방사선보다 세포에 더욱 큰 손상을 입힌다. 중성자에 의한 손상은 일반적으로 세포에 있어서 치명적이며, 중성자선은 X선이나 감마선에 비하여 직접작용을 통하여 세포사를 일으키는 경향이 있다. 본 연구에서는 고속중성자선의 성장지연비 및 산소증강비를 동물실험을 통하여 측정하고자 하였다. BALB-c 마우스의 우측 하지에 EMT-6 세포주를 이식한 후 종양의 평균용적이 $200-300mm^3$가 되었을 때 X선 및 고속중성자선을 조사하였다. 정상산소환경 및 저산소환경의 종양에 대하여 X선은 0, 11, 15.4 Gy를 조사하였고 고속중성자선은 0, 5, 7, Gy를 조사하였다. 방사선조사 후에는 종양의 용적을 주 3회 측정하였다. 정상산소환경 실험군의 경우 저산소환경 실험군에 비하여 X선 11 Gy를 조사하였을 때 성장지연비가 1.34였고, 15.4 Gy를 조사하였을 때 1.33였다. 고속중성자선을 조사한 경우정상산소환경 실험군이 저산소환경 실험군에 비하여 고속중성자선 5 Gy를 조사하였을 때 성장지연비는 0.94였고, 고속중성자선 7 Gy를 조사하였을 때 0.98였다. 고속중성자선의 산소증강비는 0.97이었다. 고속중성자선은 X선에 비하여 저산소환경에 있는 종양의 성장억제에 있어서 보다 효과적이었다.

• Nuclear Engineering and Technology
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• 제51권4호
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• pp.943-948
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• 2019

In this study, investigation of spent fuel was performed using six group delayed neutron parameters. Three used fuels (F1, F2, and F11) which are burnt over the years in the core of Missouri University of Science and Technology Reactor (MSTR), were investigated. F16 fresh fuel was used as plutonium free fuel element and compared with irradiated used fuels to develop burnup and Pu discrimination method. The fast fission factor of the MSTR was calculated to be 1.071 which was used for burnup calculations. Burnup values of F2 and F11 fuel elements were estimated to be 1.98 g and 2.7 g, respectively. $^{239}Pu$ conversion was calculated to be 0.36 g and 0.50 g for F2 and F11 elements, respectively.

• Nuclear Engineering and Technology
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• 제49권1호
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.