• Applied Microscopy
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• 제41권3호
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• pp.215-222
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• 2011

We discuss the experimental procedure for extracting reliable phase information from a defocus series of transmission electron microscopy (TEM) dark-field images using the transport of intensity equation (TIE). Taking InGaN/GaN multi-quantum well light-emitting diode as a model system, various factors affecting the final result of reconstructed phase such as TEM sample preparation, TEM imaging condition, image alignment, the correction of defocus values and the use of high frequency pass filter are evaluated. The obtained phase of wave function was converted to the geometric phase of the corresponding lattice planes, which was then used for the two-dimensional mapping of lattice strain following the dark-field inline holography (DIH) routine. The strain map obtained by DIH after optimized image processing is compared with that obtained by the geometric phase analysis of high resolution TEM (HRTEM) image, manifesting that DIH yields more accurate and reliable strain information than HRTEM-based GPA.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.63-68
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• 2014

For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

• Applied Microscopy
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• 제38권4호
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• pp.363-374
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• 2008

이 논문에서는 비교적 두꺼운 결정에 대한 일련의 고 분해 영상들에 대한 IWFR 분석의 유용성을 실험하였다. 이를 위해 JEOL ARM 1300S를 이용하여 실리콘 결정의 30 nm 두께의 [01-1] 방위와 35 nm 두께의 [11-2]에 대한 일련의 비 초점 단계의 고 분해 영상들을 관찰하였다. 이로부터 두꺼운 시료에 대해서도 IWFR 분석 결과로부터 결정 밑 표면의 파동함수를 얻을 수 있음이 밝혀졌다. 그러나 강한 동역학적 산란에 의한 효과 때문에, 이 함수의 영상패턴은 시료의 원자열 구조의 패턴을 다만 정성적으로만 반영하고 있다. 그럼에도 불구하고 이 패턴은 결정구조의 중요한 단서를 제공할 것임은 의심의 여지가 없다