• 한국재료학회지
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• 제29권8호
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• pp.483-490
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• 2019

Currently, the Korean nuclear industry uses ZIRLO as material for nuclear fuel cladding(zirconium alloy). KEPCO Nuclear Fuel is in the process of developing a HANA alloy to enable domestic production of cladding. Cladding manufacture involves multistage heat treatments and pickling processes, the latter of which is vital for the removal of defects and impurities on the cladding surface. SMUT that forms on the cladding surface during such pickling process is a source of surface defects during heat treatment and post-treatment processes if not removed. This study analyzes ZIRLO, HANA-4, and HANA-6 alloy claddings to extensively study the SEM/EDS, XRD, and particle size characteristics of SMUT, which are second phase particles that are formed on the cladding surface during pickling processes. Using the analysis results, this study observes SMUT formation characteristics according to Nb concentration in Zr alloys during the washing process following the pickling process. In addition, this study observes SMUT removal characteristics on cladding surfaces according to concentrations of nitric acid and hydrofluoric acid in the acid solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.12-15
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• 2001

Polycrystalline diamond films are deposited by cyclic method. modulating the $H_2$ Plasma and $CH_4+H_2$ plasma during the growth step. Diamond quality is evaluated by FWHM and $I_D/I_G$ ratio obtained from Raman spectroscopic analysis. Structural defects and impurities generated during the growth step are characterized by cathodoluminescence, and the variations between band-A(430 nm) line and nitrogen-related(578 nm) line are investigated as a function of $T_E/T_G$. Furthermore, the correlations between preferential orientation. film morphologies and CL characteristics are also investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2060-2062
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• 1999

When the high voltage is applied on insulation materials that have voids and impurities inner one, then probability of electrical tree inception is increased at defects. Electrical tree gives a profit to degradation analysis, because it is possible to observe by eyes and provides electrical degradation step. And electrical tree is divided to three types in usual - tree type, bush type and chestnut type tree. But these three types are divided not by method of quantitative analysis but visual and experiential analysis. In this paper, three types of electrical tree were calculated by quantitative analysis using fractal mathematics and classified to fractal dimensions (FD). FD of tree types are 1.1$\sim$1.4, bush types are 1.4$\sim$1.6 and chestnut type trees have above 1.6 FD.

• 한국표면공학회지
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• 제27권4호
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• 한국결정성장학회지
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• 제13권1호
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• pp.31-35
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• 2003

PL data에 의해 다이아몬드가 HPHT(고온고압)으로 처리하는 과정을 거치면서 격자 내에 불순물 원자뿐만 아니라 공공과 침입형 원자의 움직임과 감소, 소멸, 생성 등으로 일부 격자가 재배열됨이 드러났다. 특히, PL spectrum은 Type IIa 다이아몬드가 가지는 매우 작은 양의 질소 불순물도 명확히 나타났으며, 이로 인해 상당한 수의 점결함이 결정 격자 내에 분산되어 있음을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.187-189
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• 1997

Thermal and electrical breakdown phenomena in XLPE insulator of power cable were investigated. At high temperature the polymeric insulator was thermally deteriorated. Under the magnified high electric field, electrical tree was initiated at the sharp tip of needle electrode which was inserted to simulate the defects and impurities such as void, crack, metallic particles, dusts, and so on.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1630-1632
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• 1997

We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.

• 한국전기전자재료학회논문지
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• 제29권1호
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• pp.6-10
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• 2016

In this study, the effects of soft baking temperature on the solution derived ZTO (Zn-Sn-O) TFTs (thin-film transistors) as a In-free oxide semiconductor were investigated. In spite of the same hard baking at high temperature($600^{\circ}C$), the electrical properties of ZTO TFT was greatly changed by a small difference in soft baking temperature($180{\sim}250^{\circ}C$). The performance of TFT was deteriorated as the soft baking temperature increased. Therefore, it is important to remove the water-related defects well as organic impurities from the ZTO films during soft baking for fabrication of solution-derived high performance of TFTs.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.