• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.129-131
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• 2004

극자외선 리소그래피(EUV lithography) 기술은 50nm 이하의 선폭을 가지는 차세대 소자 제작에 있어서 선도적인 기술 중 하나이다. EUVL 에서 필수적인 요소중의 하나가 mirror 로 사용되는 blank mask 이다. Blank mask 에 있어서 가장 중요한 요소는 반사도이다. 이 blank mask 는 Si substrate 위에 반사를 위한 Mo/Si pair 가 40pair 이상 적층되어있다. Blank mask 는 매우 청결해야한다. 만약 결함이 있다면 blank mask 에는 치명적이다 결함은 blank mask 에 있어서 반사도를 떨어뜨리는 주 요소이기 때문이다. 그 결함에는 amplitude defect 과 phase defect 이 있다. FIB 에서는 amplitude defect 을 수정하는 것이 가능하다. 우리는 FIB 를 이용하여 mage mode, spot mode, bar rotation mode 를 사용하여 amplitude defect을 수정하였다. 그리고, 그 결과 효과적으로 amplitude defect을 수정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Nuclear Engineering and Technology
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• v.55 no.6
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• pp.2298-2304
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• 2023

Titanium alloys are expected to become one of the candidate materials for nuclear-powered spacecraft due to their excellent overall performance. Nevertheless, atomistic mechanisms of the defect accumulation and evolution of the materials due to long-term exposure to irradiation remain scarcely understood by far. Here we investigate the heavy irradiation damage in a-titanium with a dose as high as 4.0 canonical displacements per atom (cDPA) using atomistic simulations of Frenkel pair accumulation. Results show that the content of surviving defects increases sharply before 0.04 cDPA and then decreases slowly to stabilize, exhibiting a strong correlation with the system energy. Under the current simulation conditions, the defect clustering fraction may be not directly dependent on the irradiation dose. Compared to vacancies, interstitials are more likely to form clusters, which may further cause the formation of 1/3<1210> interstitial-type dislocation loops extended along the (1010) plane. This study provides an important insight into the understanding of the irradiation damage behaviors for titanium.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.3
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• pp.261-270
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• 2010

This paper presents an analytical investigation for a baseline-free imaging of a defect in plate-like structures using the time-reversal of Lamb waves. We first consider the flexural wave (A0 mode) propagation in a plate containing a defect, and reception and time reversal process of the output signal at the receiver. The received output signal is then composed of two parts: a directly propagated wave and a scattered wave from the defect. The time reversal of these waves recovers the original input signal, and produces two additional side bands that contain the time-of-flight information on the defect location. One of the side band signals is then extracted as a pure defect signal. A defect localization image is then constructed from a beamforming technique based on the time-frequency analysis of the side band signal for each transducer pair in a network of sensors. The simulation results show that the proposed scheme enables the accurate, baseline-free detection of a defect, so that experimental studies are needed to verify the proposed method and to be applied to real structure.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.11
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• pp.131-137
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• 2009

A pair of connectors for transferring torque is widely used in various types of a mechanical system. By the repetition of mechanical contact between a pair of connector, wear occurs easily. This kind of defect sometimes can cause a serious problem of health in case of the connector is used in a refrigerator. In this work, the material combination of connectors was experimentally studied to reduce the amount of wear; for the combination of connectors, various types of engineering materials including polyacetal, polycabonate, stainless steel (STS-304), NiP coated STS-304, and STS-310 were evaluated to check each wear behavior. Also an effective method of wear test was suggested for precise controlling of wear conditions such as contact area, contact force, and relative motion speed. From the test results, it was found out that a pair of polyacetal to STS-304 and STS-310 showed the lowest specific wear rates among other pairs.

• New & Renewable Energy
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• v.8 no.1
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• pp.24-34
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• 2012

The main issue of boron doped p-type czochralski-grown silicon solar cells is the degradation when they are exposed to light or minority carriers injection. This is due to the meta-stable defect such as boron-oxygen in the Cz-Si material. Although a clear explanation is still researching, recent investigations have revealed that the Cz-Si defect is related with the boron and the oxygen concentration. They also revealed how these defects act a recombination centers in solar cells using density function theory (DFT) calculation. This paper reviews the physical understanding and gives an overview of the degradation models. Therefore, various methods for avoiding the light-induced degradation in Cz-Si solar cells are compared in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2&lt;x&lt;3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2&lt;x&lt;3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.104-107
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• 1999

We investigated the effects of cooling condition on deep levels and iron precipitate formation in iron-contaminated p-type silicon by DLTS(Deep Level Transient Spectroscopy) and preferential etching technique. Dependency of cooling condition on Bulk Micro-Defect (BMD) and four different iron-related deep traps were observed. For normal cooling condition, T1, T2, T3, T4 traps that related to Fe\ulcorner or Fe-O complex were obtained. However, the trap with activation energy, 0.4 eV was observed for slow cooling condition. The trap caused by the $\textrm{Fe}^{+}\textrm{}^{-}$ pair (H4:0.56eV) were detected only at the case of $\textrm{LN}_{2}$ quenching condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Journal of The Korean Society of Inherited Metabolic disease
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• v.16 no.1
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• pp.42-46
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• 2016

Isovaleric acidemia is autosomal-recessively inherited and an inborn error of metabolism caused by abnormal leucine metabolism due to the genetic defect of IVD (Isovaleryl-CoA dehydrogenase). IVD corresponds to mitochondrial matrix enzyme that acts on converting isovaleryl-CoA into 3-methylcrotonyl-CoA in the leucine catabolism. The IVD gene is located at Chromosome 15q14-q15, particularly between base pair 40,405,485 and base pair 40,435,948. It consists of 12 exons and has been reported to cause over 50 diseases so far. We conducted IVD gene test on the patient with acute isovaleric acidemia and confirmed a new type of mutation for the first time. As a result of analyzing the IVD gene sequence, we found out that c.129T>G(p.Asn43Lys) and c.1033A>G(p.Asn345Asp) mutations exist as heterozygosity at Exon 1 and Exon 10 respectively, novel mutation.