• 제목/요약/키워드: Defect level

검색결과 587건 처리시간 0.027초

Si 웨이퍼의 내부 금속 불순물 Fe의 결함분석 (Defect evaluation of Fe metallic contamination in silicon wafers)

  • 오민환;남효덕;김흥락;김동수;김영덕;김광일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.578-581
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    • 2001
  • Silicon wafers using DRAM devices required for high cleaning technology and this cleaning technology was evaluated by defect level or electron life time. This paper examined the correlation of SPV(Surface Photo Voltaic Analyzer) which analyzes diffusion length of minority carriers and DLTS(Deep level Transient Spectroscope) which analyzes defect level.

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공동주택 하자감정을 위한 하자조사단계의 현장조사 업무 모델링 (Field Investigation Work Modeling on Defect Inspecting Step of Defect Consulting in Apartment Building of Korea)

  • 박준모;서덕석
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2015년도 추계 학술논문 발표대회
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    • pp.87-88
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    • 2015
  • A defect dispute surrounding an apartment building is in constant trouble, a defect consulting is necessary that objective and impartial for solving a defect. The defect dispute about a defect lawsuit is conducted in the order that filling of lawsuit, consulting order, defect inspecting, estimating a repairing cost, writing a consulting report, submitting a consulting report, and decision by court. Of these, a step of defect inspecting is extensively investigated an occurred defect that each defect index and type from each part and place. At this time, it is collected of many data and created many information. For this, it need to organize and manage. The study is a modeling of field investigation work process that second phase of defect inspecting step. A literature study is defined a work until level 2. This study is defined the work until level 3 to 4. In addition, the modeling can do for using a job name, a place to job, a job to do, and a person concerned about defect consulting case. The modeling is expected a contribution of improving a defect consulting process and systematizing a judgment standard.

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Relation Between Defect State and Negative Ultra-Violet Photoresponse from n-ZnO/p-Si Heterojunction Diode

  • 조성국;남창우;김은규
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.191.2-191.2
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    • 2013
  • The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

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CMMI 기반의 결함 분석 및 통제 시스템 개발 (Development of a defect analysis and control system based on CMMI)

  • 조성민;한혁수
    • 인터넷정보학회논문지
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    • 제8권2호
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    • pp.15-22
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    • 2007
  • 결함을 초기 단계에 발견하여 제거함으로써 품질이 좋은 소프트웨어를 만들 수 있다 이를 위해 결함을 효과적으로 추적하고 관리하는 결함 추적 시스템(Defect Trucking System)의 도입이 필요하다. 기존의 결함 추적 시스템은 한꺼번에 많은 종류의 데이터를 모음으로써 이를 도입한 조직에서 수많은 데이터를 왜 모아야 하는지에 대해 인식이 부족하고 결함 관리프로세스 없이 도구만 적용함으로써 결함 추적 시스템 도입에 어려움을 겪고 있다. 또한 CMMI 성숙도 수준 2, 3에서는 결함 관리 활동을 수행하는 프로세스 영역이 없기 때문에 CMMI 성숙도 수준 2, 3에 해당하는 조직이 결함 추적 시스템을 도입하는데 문제가 되고 있다. 이에 본 논문에서는 CMMI 기반의 조직이 기존의 결함 추적 시스템을 도입하였을 때 생기는 문제점을 해결하고 CMMI 각 성숙도마다 어떤 결함 데이터를 모아야 하는지, 어떻게 결함 관리를 해야 하는지에 대한 가이드라인을 제공하고자 한다. 그리고 검토 및 테스팅을 통해 도출된 결함 데이터에 대하여 각 담당자 별로 업무를 할당, 추적할 수 있게 하며, 결함에 관한 각종 상태정보와 통계 정보 등을 제공하는 결함 분석 및 통제 시스템을 개발하고자 한다.

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인쇄 회로 기판의 결함 검출 및 인식 알고리즘 (A neural network approach to defect classification on printed circuit boards)

  • 안상섭;노병옥;유영기;조형석
    • 제어로봇시스템학회논문지
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    • 제2권4호
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    • pp.337-343
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    • 1996
  • In this paper, we investigate the defect detection by making use of pre-made reference image data and classify the defects by using the artificial neural network. The approach is composed of three main parts. The first step consists of a proper generation of two reference image data by using a low level morphological technique. The second step proceeds by performing three times logical bit operations between two ready-made reference images and just captured image to be tested. This results in defects image only. In the third step, by extracting four features from each detected defect, followed by assigning them into the input nodes of an already trained artificial neural network we can obtain a defect class corresponding to the features. All of the image data are formed in a bit level for the reduction of data size as well as time saving. Experimental results show that proposed algorithms are found to be effective for flexible defect detection, robust classification, and high speed process by adopting a simple logic operation.

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TeOx(x=1.42)/SiO2로 구성된 광가변적인 1차원 광자결정 연구 (A Study on the Photo Reversible One-dimensional Photonic Crystals Composed of TeOx(x=1.42)/SiO2)

  • 공헌;여종빈;이현용
    • 한국전기전자재료학회논문지
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    • 제28권2호
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    • pp.99-103
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    • 2015
  • One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

하악 제1대구치 치근본체의 길이가 조직유도재생술의 임상결과에 미치는 영향 (Effects of root trunk length after GTR on clinical outcomes)

  • 피성희;신형식
    • Journal of Periodontal and Implant Science
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    • 제36권2호
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    • pp.427-434
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    • 2006
  • The form of furcation influence both the pathogenesis of periodontal destruction and therapeutic results. The present study was performed to evaluate the effect of root trunk length on clinical outcomes of guided tissue regeneration. Total 30 mandibular first molars were evaluated in this study. Probing pocket depth, clinical attachment level, vertical defect depth and horizontal defect depth were measured at baseline and 6 month after GTR. Correlation coefficients between root trunk length and other clinical measurement were analyzed. The results of this study were as follows 1. The mean root trunk length in lower 1st molar was 2.15 mm. 2. Probing pocket depth, clinical attachment level, vertical defect depth and horizontal defect depth were significantly reduced at 6 month postoperatively compared to values of baseline 3. Correlation coefficient between root trunk length and vertical defect depth at baseline was 0.406 showing the positive correlation 4. Correlation coefficient between root trunk length and horizontal defect depth at baseline was -0.463 showing the negative correlation. 5. Correlation coefficient between root trunk length and decrease of horizontal defect depth after GTR was 0.654 showing the positive correlation. In conclusion, the root trunk length maybe effector for clinical outcome after guided tissue regeneration.

Ultraviolet (UV)Ray 후처리를 통한 InGaZnO 박막 트랜지스터의 전기적 특성변화에 대한 연구

  • 최민준;박현우;정권범
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.333.2-333.2
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    • 2014
  • RF 스퍼터링 방법을 이용하여 제작된 IGZO 박막 트랜지스터 및 단막을 제조하여 UV처리 유무에 따른 전기적 특성을 평가하였다. IGZO 박막 트랜지스터는 Bottom gate 구조로 제조되었으며 UV처리 이후 전계효과 이동도, 문턱전압 이하 기울기 값등 모든 전기적 특성이 개선된 것을 확인 하였다. 이후 UV처리에 따른 소자의 전기적 특성 개선에 대한 원인을 분석하기위해 물리적, 전기적, 광학적 분석을 실시하였다. XRD분석을 통해 UV처리 유무에 따른 IGZO박막의 물리적 구조 변화를 관찰했지만 IGZO박막은 UV처리 유무에 상관없이 물리적 구조를 갖지 않는 비정질 상태를 보였다. IGZO 박막 트랜지스터의 문턱전압 이하의 기울기 값과을 통하여 반도체 내부에 존재하는 결함의 양을 계산한 결과 UV를 조사하였을 때 결함의 양이 감소하는 결과를 얻었으며 이 결과는 SE를 통해 밴드갭 이하 결함부분을 측정하였을 때와 같은 결과였다. 또한 UV처리 전에는 shallow level defect, deep level defect등의 넓은 준위에서 결함이 발견된 반면 UV처리 이후에는 deep level defect준위는 없어지고 shallow level defect준위 역시 급격하게 감소한 것을 볼 수 있었다. 결과적으로 IGZO 박막의 경우 UV처리를 함에 따라 결함의 양이 감소하여 IGZO박막 트랜지스터의 전계 효과 이동도를 증가 시킬 뿐 아니라 문턱전압 이하 기울기 값을 감소시키는 원인으로 작용하게 된다는 결과를 도출하였다.

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콘크리트 표층부 품질이 SL재의 하자에 미치는 영향 - SL재의 하자 발생에 영향을 미치는 콘크리트 표층부의 품질 평가방법(II) - (The Relationship Between the Quality of Surface Layer of Concrete Floor and the Defect of Self-Leveling Material - Evaluation Method about Surface Layer Quality of Concrete Floor Groundwork Corresponding to Defect in Self-leveling Material (Part II) -)

  • 김두호;최수경
    • 한국건축시공학회지
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    • 제7권4호
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    • pp.125-132
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    • 2007
  • The use of Self-Leveling material is increasing recently. This paper assesses the quality of surface layer of concrete floor when Self-Leveling material is defective. The paper shows how to predict the defect of SL material before construction begins. The relationship between the quality of surface layer of concrete floor and the defect of SL material was determined and the quality of surface layer of concrete floor was then estimated. The relations between the quality of surface layer and the defect of SL material were determine considering surface strength, moisture, and consistency of surface layer. Absorbing amount was used as the indicator of consistency and the absorbing amount of test material was measured. Then the relations between the test material and surface strength were determined. Generally concrete floor with greater consistency has greater surface strength, however in this study, we hound that high impact concrete floor could have lower surface strength as the consistency gets bigger. The relations between the level of defect occurred in SL material and the quality of surface layer were examined and we clarified that the surface layer with lower consistency gets higher possibility to occur exfoliation in early stage, one or two weeks after constructing SL material. When the consistency is sufficient, the occurring situation of defect depends upon the moisture of surface layer. Little amount of moisture gets higher possibility not to occur the defect. As the amount increases, fissure generates and early exfoliation may occur. In addition, the level of fissure is highly related with the surface strength.

경골 손상 치료에서의 침습형 저출력 레이저 치료법 및 효과 (A Method and Effect for Tibial Defect Treatment Using Interstitial Low Level Laser)

  • 이상엽;황동현;김한성;정병조
    • 대한의용생체공학회:의공학회지
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    • 제37권4호
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    • pp.147-151
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    • 2016
  • Tibial defect, or fracture is very routine musculoskeletal case which brings fully uncomfortable and painful situations to patient. Moreover, it has long hospitalization period because of its risk of non-union. There are many studies using ultrasound, vibration, and laser for bone regeneration to figure out fast bone healing. Among them, Low Level Laser Therapy (LLLT) is already known that it is very easy to treat and may have positive effect for bone regeneration. However, LLLT has uncertain energy dose because of scattering and absorption of laser in tissue. In this study, we used interstitial LLLT to treat tibial defect in animal study. The Interstitial LLLT can overcome some limitations caused by laser scattering or absorption in tissue medium. The results were evaluated using u-CT which can calculate X-ray attenuation coefficient and bone volume of bone defect area. These results showed that interstitial LLLT may affect fast bone healing process in early phase.