• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.578-581
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• 2001

Silicon wafers using DRAM devices required for high cleaning technology and this cleaning technology was evaluated by defect level or electron life time. This paper examined the correlation of SPV(Surface Photo Voltaic Analyzer) which analyzes diffusion length of minority carriers and DLTS(Deep level Transient Spectroscope) which analyzes defect level.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2015.11a
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• pp.87-88
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• 2015

A defect dispute surrounding an apartment building is in constant trouble, a defect consulting is necessary that objective and impartial for solving a defect. The defect dispute about a defect lawsuit is conducted in the order that filling of lawsuit, consulting order, defect inspecting, estimating a repairing cost, writing a consulting report, submitting a consulting report, and decision by court. Of these, a step of defect inspecting is extensively investigated an occurred defect that each defect index and type from each part and place. At this time, it is collected of many data and created many information. For this, it need to organize and manage. The study is a modeling of field investigation work process that second phase of defect inspecting step. A literature study is defined a work until level 2. This study is defined the work until level 3 to 4. In addition, the modeling can do for using a job name, a place to job, a job to do, and a person concerned about defect consulting case. The modeling is expected a contribution of improving a defect consulting process and systematizing a judgment standard.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• Journal of Internet Computing and Services
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• v.8 no.2
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• pp.15-22
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• 2007

As we detect defects and eliminate them in early stages, we can make better quality software. For doing this task, we need to use a defect tracking system which con effectively track and manage defects that give severe effects on software quality. Those existing defect tracking systems have some weaknesses as we apply them to organizations that use CMMI for process improvements. Major problems of those systems are that they require the organizations to collect many types of defect data at a time without providing the proper explanation and even without the support of defect management process. The organizations at CMMI maturity level 2 and 3 have problems for analyzing those defects because there is no specific process area at CMMI maturity level 2 and 3 which directly handles defect managing activites. This paper resolves those problems by developing a defect tracking system which offers methods of managing defects. And the system provides guidelines of which defects should be gathered for each CMMI mathurity levels. The system also has functions to generate various status and statistic information on defects, and to assign defect data to the person in charge so that he or she track the defect to the closure

• Journal of Institute of Control, Robotics and Systems
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• v.2 no.4
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• pp.337-343
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• 1996

In this paper, we investigate the defect detection by making use of pre-made reference image data and classify the defects by using the artificial neural network. The approach is composed of three main parts. The first step consists of a proper generation of two reference image data by using a low level morphological technique. The second step proceeds by performing three times logical bit operations between two ready-made reference images and just captured image to be tested. This results in defects image only. In the third step, by extracting four features from each detected defect, followed by assigning them into the input nodes of an already trained artificial neural network we can obtain a defect class corresponding to the features. All of the image data are formed in a bit level for the reduction of data size as well as time saving. Experimental results show that proposed algorithms are found to be effective for flexible defect detection, robust classification, and high speed process by adopting a simple logic operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.99-103
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• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• Journal of Periodontal and Implant Science
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• v.36 no.2
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• pp.427-434
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• 2006

The form of furcation influence both the pathogenesis of periodontal destruction and therapeutic results. The present study was performed to evaluate the effect of root trunk length on clinical outcomes of guided tissue regeneration. Total 30 mandibular first molars were evaluated in this study. Probing pocket depth, clinical attachment level, vertical defect depth and horizontal defect depth were measured at baseline and 6 month after GTR. Correlation coefficients between root trunk length and other clinical measurement were analyzed. The results of this study were as follows 1. The mean root trunk length in lower 1st molar was 2.15 mm. 2. Probing pocket depth, clinical attachment level, vertical defect depth and horizontal defect depth were significantly reduced at 6 month postoperatively compared to values of baseline 3. Correlation coefficient between root trunk length and vertical defect depth at baseline was 0.406 showing the positive correlation 4. Correlation coefficient between root trunk length and horizontal defect depth at baseline was -0.463 showing the negative correlation. 5. Correlation coefficient between root trunk length and decrease of horizontal defect depth after GTR was 0.654 showing the positive correlation. In conclusion, the root trunk length maybe effector for clinical outcome after guided tissue regeneration.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.333.2-333.2
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• 2014

RF 스퍼터링 방법을 이용하여 제작된 IGZO 박막 트랜지스터 및 단막을 제조하여 UV처리 유무에 따른 전기적 특성을 평가하였다. IGZO 박막 트랜지스터는 Bottom gate 구조로 제조되었으며 UV처리 이후 전계효과 이동도, 문턱전압 이하 기울기 값등 모든 전기적 특성이 개선된 것을 확인 하였다. 이후 UV처리에 따른 소자의 전기적 특성 개선에 대한 원인을 분석하기위해 물리적, 전기적, 광학적 분석을 실시하였다. XRD분석을 통해 UV처리 유무에 따른 IGZO박막의 물리적 구조 변화를 관찰했지만 IGZO박막은 UV처리 유무에 상관없이 물리적 구조를 갖지 않는 비정질 상태를 보였다. IGZO 박막 트랜지스터의 문턱전압 이하의 기울기 값과을 통하여 반도체 내부에 존재하는 결함의 양을 계산한 결과 UV를 조사하였을 때 결함의 양이 감소하는 결과를 얻었으며 이 결과는 SE를 통해 밴드갭 이하 결함부분을 측정하였을 때와 같은 결과였다. 또한 UV처리 전에는 shallow level defect, deep level defect등의 넓은 준위에서 결함이 발견된 반면 UV처리 이후에는 deep level defect준위는 없어지고 shallow level defect준위 역시 급격하게 감소한 것을 볼 수 있었다. 결과적으로 IGZO 박막의 경우 UV처리를 함에 따라 결함의 양이 감소하여 IGZO박막 트랜지스터의 전계 효과 이동도를 증가 시킬 뿐 아니라 문턱전압 이하 기울기 값을 감소시키는 원인으로 작용하게 된다는 결과를 도출하였다.

• Journal of the Korea Institute of Building Construction
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• v.7 no.4
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• pp.125-132
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• 2007

The use of Self-Leveling material is increasing recently. This paper assesses the quality of surface layer of concrete floor when Self-Leveling material is defective. The paper shows how to predict the defect of SL material before construction begins. The relationship between the quality of surface layer of concrete floor and the defect of SL material was determined and the quality of surface layer of concrete floor was then estimated. The relations between the quality of surface layer and the defect of SL material were determine considering surface strength, moisture, and consistency of surface layer. Absorbing amount was used as the indicator of consistency and the absorbing amount of test material was measured. Then the relations between the test material and surface strength were determined. Generally concrete floor with greater consistency has greater surface strength, however in this study, we hound that high impact concrete floor could have lower surface strength as the consistency gets bigger. The relations between the level of defect occurred in SL material and the quality of surface layer were examined and we clarified that the surface layer with lower consistency gets higher possibility to occur exfoliation in early stage, one or two weeks after constructing SL material. When the consistency is sufficient, the occurring situation of defect depends upon the moisture of surface layer. Little amount of moisture gets higher possibility not to occur the defect. As the amount increases, fissure generates and early exfoliation may occur. In addition, the level of fissure is highly related with the surface strength.

• Journal of Biomedical Engineering Research
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• v.37 no.4
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• pp.147-151
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• 2016

Tibial defect, or fracture is very routine musculoskeletal case which brings fully uncomfortable and painful situations to patient. Moreover, it has long hospitalization period because of its risk of non-union. There are many studies using ultrasound, vibration, and laser for bone regeneration to figure out fast bone healing. Among them, Low Level Laser Therapy (LLLT) is already known that it is very easy to treat and may have positive effect for bone regeneration. However, LLLT has uncertain energy dose because of scattering and absorption of laser in tissue. In this study, we used interstitial LLLT to treat tibial defect in animal study. The Interstitial LLLT can overcome some limitations caused by laser scattering or absorption in tissue medium. The results were evaluated using u-CT which can calculate X-ray attenuation coefficient and bone volume of bone defect area. These results showed that interstitial LLLT may affect fast bone healing process in early phase.