• Journal of the Korean Solar Energy Society
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• v.21 no.1
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• pp.1-10
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the temperature$(T_w)$. The films deposited at high $T_w$ of $2000^{\circ}C$ have superior crystalline proper average lateral grain sizes are larger than $1{\mu}m$ and there are no vertical grain boundaries. The sur of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and text surface are believed to give high current density when applied to solar cells. However, the poly films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• Corrosion Science and Technology
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• v.18 no.4
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• pp.148-153
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• 2019

Pure nickel with a thickness of 1 mm was plated on type 304 stainless steels and low alloy steels (JIS G3131 SPHC) by electrolytic plating method in a circulating plating bath. Plating performance, mechanical properties, and surface characteristics were evaluated in terms of pretreatment process, anode material, pH, current density, and flow rate of the plating solution. Addition of hydrochloric acid during pre-treatment process improved the adhesion performance of plating. To improve plating efficiency, it is desirable to use S-nickel rather than electrolytic nickel. The use of S-nickel was also confirmed to be desirable for maintaining the pH and concentration of the plated solution. The defect of the plating using S-nickel anode produced pit on the surface. However, it is believed that proper control can be obtained by increasing the flow rate. Internal stress and hardness values of electrolytic nickel plating according to current density need to be carried out with further studies.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.72-77
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• 2019

To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3342-3351
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• 2023

High-density polyethylene (HDPE) pipelines in nuclear power plants (NPPs) have to meet high requirements for seismic performance. HDPE pipes have been proved to have good seismic performance, but joints are the weak links in the pipelines, and pipeline failures usually initiate from the defects inside the joints. Limited data are available on the seismic performance of butt-fusion joints of HDPE pipelines in NPPs, especially in terms of defects changes inside the joints after earthquakes. In this paper, full-scale shaking table tests were performed on a test section of suspended HDPE pipelines in an NPP, which included straight pipes, elbows, and 10 butt-fusion joints. During the tests, the seismic load-induced strain of the joints was analyzed by strain gauges, and it was much smaller than the internal pressure and self-weight-induced strain. Before and after the shaking table tests, phased array ultrasonic testing (PA-UT) was conducted to detect defects inside the joints. The locations, numbers, and dimensions of the defects were analyzed. It was found that defects were more likely to occur in elbows joints. No new defect was observed after the shaking table tests, and the defects showed no significant growth, indicating the satisfactory seismic performance of the butt-fusion joints.

• Progress in Superconductivity
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• v.3 no.1
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• pp.36-40
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• 2001

We have studied vortex dynamics in$ Bi_2$$Sr_2$$CaCu_2$O$_{8}$single crystals of unirradiated and irradiated samples by using 100 $\times$ $100\mu\textrm{m}^2$Hall sensor. Doses equivalent magnetic fields are 20 G, 100 G and 1 kG. In the magnetization measurement, a second magnetization peak (SMP) was observed in unirradiated, 20 G dose and 100 G dose samples in contrast to 1 kG dose sample. In the unirradiated sample, the SMP was observed in the range of 18 K ~ 35 K and the amplitude of the SMP decreased with increasing temperature. With increase of the irradiation dose, temperature region and sharpness of the SMP were reduced. In the magnetic relaxation measurement, we observed that the normalized relaxation rate S decreased with increasing the irradiation dose. Our results suggest that the vortex dynamics is not greatly affected by low-density columnar defects.s.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.2
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• pp.236-242
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• 1986

The dependence of the current-voltage characteristics of hydrogenated amorphous silicon pin solar cells on the illumimination light intensity has been investigated. The open circuit voltage increases linearly with increasing the logarithm of light intensity up to AM 1, and nearly saturates above AM 1, indicating the open circuit voltage approaching the built-in potential of the pin solar cell above AM 1. The short circuit current density increase with light intensity in proportion to I**0.85 before and I**0.97 after light exposure. Since the series resistance devreses and shunt resistance increases with light intensily, the fill factor increases with light illumination. To increase the fill factor at high illumination in large area solar cells, t6he grid pattern on the ITO substrates should be made. Long light exposure on the solar cells gives rise to the increase of bulk resistance and defect states, resulting in the decrease of the fil factor and short circuit current density. The potential drop in the bulk of the a-Si:H pin solar cells at short circuit condition increases with decreasing temperature, and increases after long light exposure.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.3129-3138
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• 2024

The in-situ TEM irradiation experiments of zirconium alloy were conducted at 573 K, 673 K, and 773 K utilizing a 400 keV Kr + single beam and a 400 keV Kr+ and 30 keV He + dual beam. The results show that a large number of dislocation loops have been characterized in the matrix of the zirconium alloy under irradiation. With increasing the irradiation damage dose, some dislocation loops have reacted with one another to form a larger dislocation loop, which has finally formed dislocation lines or other defect structures. In zirconium alloys irradiated with Kr + single beam and Kr+ and He + dual-beam radiation, the proportion of <a> type dislocation loops with different Burgers vectors is essentially the same at low damage doses, but the proportion of interstitial type dislocation loops with the same Burgers vectors is obviously different. The amorphization of the second phase and the dissolution of the small-sized second phase were also pointed out. With the increase in temperature, the density of the dislocation loop in zirconium alloy gradually decreases, and the size of dislocation loop first increases and then decreases. Kr+ and He + dual beam irradiation increases the size of dislocation loops but decreases their density as compared with Kr + single beam irradiation.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between Zn²⁺ions from respective zinc precursors and OH^- ions from H₂O.