• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.19-21
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas. Refine scheme was calculated by the difference of doping concentration between any of two nodes. Each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.

• 한국세라믹학회지
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• 제37권7호
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• pp.726-729
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• 2000

The entitled report revealed that ZnO phosphor samples treated at different temperatures under a given reduction atmosphere show the radiation brightness increase with increase of temperature up to about 900$^{\circ}C$ but become decreasing beyond the temperature. The brightness deterioration with curing temperature at higher temperatures was explained by the decrease of excess zinc ions resulted from their evaporation. The comments will open possibility for different discussions on the experimental result by introducing numerical relationships between the concentration of the native defects and the curing condition.

• Composites Research
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• 제29권6호
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• pp.388-394
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• 2016

Fiber reinforced plastic (FRP) composites have drawn increasing attentions worldwide for decades due to its outstanding properties. Stress concentration factor (SCF) as an essential parameter in materials science are critically considered in structure design and application, strength assessment and failure prediction. However, investigation of stress concentration in FRP composites has been rarely reported so far. In this study, three resource-conserving analyses (Isotropic analysis, Orthotropic analysis and Finite element analysis) were introduced to plot the $K_T^A-d/W$ curve for E-glass/epoxy composite plate with the geometrical defect of circular hole placed centrally. The plates were loaded to uniaxial direction for simplification. Finite element analysis (FEA) was carried out via ACP (ANSYS composite prepost module). Based on the least squares method, a simple expression of fitting equation could be given based on the simulated results of a set of discrete points. Finally, all three achievable solutions were presented graphically for explicit comparison. In addition, the investigation into customized efficient SCFs has also been carried out for further reference.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1229-1232
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• 2004

The ratio of optimized concentration on optical characteristics for phase-separated composite organic films (PSCOF) liquid crystal display is 30% of pre-polymer (NOA65) and 70% of ferroelectric liquid crystal (Felix). The layer structure in ferroelectric liquid crystal cell made by 30% NOA65 and 70% Felix materials is tilt-bookshelf layer structure. The angle of tilt-bookshelf structure are 17$^{\circ}$, 12$^{\circ}$ which are almost same of tilt angle of ferroelectric liquid crystal in Sm $C^{\ast}$ phase. We know that this result is from compensating the layer buckling. In this paper, we will discuss the effect of layer structure in PSCOF cell on ratio of concentration between pre-polymer and liquid crystal by x-ray measurements. We believe that technology of PSCOF is a good solution to solve the problems of align-defect and mechanical shock for future TV application and plastic LCD.

• 한국세라믹학회지
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• 제28권6호
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• pp.495-501
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• 1991

This study is intended to make defect-free region, denuded zone at the silicon wafer surface for semiconductor device substrates. In this experiment, initial oxygen concentration of starting material CZ-grown silicon wafer, various heat treatment combinations, denuding ambient and the amounts of oxygen reduction were measured, and then denuded zone (DZ) formation and depth were investigated. In Low/High anneal (DZ formation could be achieved), the optimum temperature for Low anneal was 700$^{\circ}C$∼750$^{\circ}C$. In case of High anneal, with the time increased, DZ depth was increased at 1000$^{\circ}C$, 1150$^{\circ}C$ respectively, but on the contrary, DZ depth was decreased at low temperature 900$^{\circ}C$. As well, out-diffusion time below 2 hours was unsuitable for effective Gettering technique even though the temperature was high, and DZ formation could be achieved when initial oxygen concentration was only above 14 ppm in silicon wafer.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.128-135
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• 1998

The paper gives a brief introduction to protonic defects and their chemistry, thermodynamics and transport in oxides. The temperature dependence of the equilibrium concentration of protons is illustrated and compared for different acceptor-doped oxides. The difficulties of saturating as well as emptying the oxides of protons are discussed. In order to illustrate the possibility of lattice relaxation of defects, a conceptual study is made of a case where the enthalpy of dissolution of protons(water) at the cost of oxygen vacancies is assumed dependent on the concentration of vacancies. It is shown how this changes the behavior of hydration curves vs temperature and water vapour pressure. finally, a discussion is given on the water uptake in heavily oxygen deficient oxides; how water uptake may affect order-disorder in the oxygen sublattice and eventually lead to defective, disordered or ordered oxyhydroxides or hydroxides of potential interest as intermediate temperature proton conductions.

• 한국세라믹학회지
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• 제35권12호
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• pp.1323-1328
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• 1998

The electrical conductivities of the yttria (8mol%) stabilizedzirconia-ceria solid solutions were measured as a function of oxygen partial between 80$0^{\circ}C$ and 100$0^{\circ}C$ using 4-probe d.c. method Under pure oxygen atmosphere the oxygen ionic conductivity of CeO2-ZrO2 decreased with the concentration of CeO2 Under reducing condition electronic conduction due to the redox equilibrium of Ce ion was observed. Total ionic and electronic conductivities fitted by a defect model enabled to determine the electronic transference number(tei) which increased with the concentration of CeO2 and with the degree of reduction.

• 한국표면공학회지
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• 제28권3호
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• pp.174-181
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• 1995

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.

• Journal of Magnetics
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• 제17권3호
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• pp.163-167
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• 2012

The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.

• Advances in materials Research
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• 제12권4호
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• pp.273-286
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• 2023

The fracture mechanics make it possible to characterize the behavior with cracking of structures using parameters quantifiable in the sense of the engineer, in particular the stress field, the size of the crack, and the resistance to cracking of the material. Any structure contains defects, whether they were introduced during the production of the part (machining or molding defects for example). The aim of this work is to determine numerically by the finite element method the stress concentration factor Kt of a plate subjected to a tensile loading containing a lateral form defect with different sizes: a semicircle of different radii, a notch with different opening angles and a crack of different lengths. The crack propagation is then determined using the extended finite element technique (X-FEM). The modeling was carried out using the ABAQUS calculation code.