• Journal of Korean Society of Industrial and Systems Engineering
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• v.45 no.4
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• pp.157-166
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• 2022

In the case of a die-casting process, defects that are difficult to confirm by visual inspection, such as shrinkage bubbles, may occur due to an error in maintaining a vacuum state. Since these casting defects are discovered during post-processing operations such as heat treatment or finishing work, they cannot be taken in advance at the casting time, which can cause a large number of defects. In this study, we propose an approach that can predict the occurrence of casting defects by defect type using machine learning technology based on casting parameter data collected from equipment in the die casting process in real time. Die-casting parameter data can basically be collected through the casting equipment controller. In order to perform classification analysis for predicting defects by defect type, labeling of casting parameters must be performed. In this study, first, the defective data set is separated by performing the primary clustering based on the total defect rate obtained during the post-processing. Second, the secondary cluster analysis is performed using the defect rate by type for the separated defect data set, and the labeling task is performed by defect type using the cluster analysis result. Finally, a classification learning model is created by collecting the entire labeled data set, and a real-time monitoring system for defect prediction using LabView and Python was implemented. When a defect is predicted, notification is performed so that the operator can cope with it, such as displaying on the monitoring screen and alarm notification.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.72-77
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• 1998

A defect model for UO$_2$ fuel containing soluble fission products was devised based on the defect structure of pure and doped uranias. Using the equilibrium between fuel solid-solution and fission-products and the material balance within the fuel, a tracing method to get the stoichiometry change of urania fuel with burnup was made. This tracing method was applied to high burnup urania fuel and DUPIC fuel. The oxygen potential of urania fuel turned out to increase slightly with burnup. The stoichiometry change was calculated to be negligible due to the buffering role f Mo. The oxygen potential of DUPIC fuel out to be sensitive to the initial chemical state of Mo in the fuel.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.468-472
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• 2017

2차원 InSe 단일층에 존재할 수 있는 vacancy defect인 In vacancy, Se vacancy의 원자구조 및 전자구조 특성을 제일원리계산을 이용해 살펴보았다. InSe $5{\times}5$ supercell을 이용하였으며 total energy를 구해 어떤 구조가 가장 안정한지 찾았다. Relax된 결함구조들을 clean InSe와 비교하여 어떤 변화가 있었는지 특징을 분석하였다. 이러한 intrinsic 결함들이 각각 어떤 구조로 relaxation되는지 살펴보고 clean InSe와 비교해보았다. 또한 각 결함구조의 density of states (DOS), projected density of states (PDOS)와 band structure를 clean InSe와 비교해봄으로써 defect state가 어떻게 나타나는지를 찾아보았다.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.151-155
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• 1998

The total electrical conductivity, ionic conductivity, and nonstoichimetry of a new cathode material $Y_{1-x}Ca_xFeO_{3-\delta}$ (x=0.1) were measured as functions of temperature ($900\leqT/^{\circ}C\leq1100$) and oxygen partial pressure $(10^{-6}\leqPo_2/atm\leq0.21$). Isothermal variations of these properties with $Po_2$ support that the majority type of ionic defects are anti-Frenkel disorder which, however, has seldom been considered for perovskite-based oxides. The results are discussed in comparison with those reported on similar oxides.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2012.10a
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• pp.169-174
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• 2012

Reduction unit is one of the most important components for railway vehicle because torque of motor must be transmitted to wheels of vehicle by reduction unit. However, According to advanced studies, it has been often broke down due to the damage, fatigue and wear of gear. To solve this problem, defect diagnosis methods of gear have been mainly using the vibration diagnosis technology through vibration waveform and frequency analysis. However, We should know vibration characteristics of normal state reduction unit prior to defect diagnosis. So in this paper, We had analyzed vibration characteristics of reduction unit in order to utilize monitoring system development. Comparison of targets is the vibration characteristics of normal state reduction unit about Electric Multiple Unit(EMU) and the High-speed trains(KTX, KTX II).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.81-86
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• 2023

SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.1
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• pp.109-119
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• 2016

When manufactured parts undergo large deformations during the manufacturing process, the global specifications of a part based on the concept of tolerance zone defined in the ISO 1101 standard [1] enable one to control the part's global defects. However, the extent of this tolerance zone is too large when the objective is to minimize local defects, such as hollows and bumps. Therefore, it is necessary to address local defects and global defects separately. This paper refers to the ISO 10579 standard [2] for flexible parts, which enables us to define a stressed state in order to measure the part by straightening it to simulate its position in the mechanism. The originality of this approach is that the straightening operation is performed numerically by calculating the displacement of a cloud of points. The results lead to a quantification of the global defects through various simple models and enable us to extract local defects. The outcome is an acceptable tolerance solution. The procedure is first developed for the simple example of a steel bar with a rectangular cross section, then applied to an industrial case involving a complex 3D surface of a turbine blade. The specification is described through ISO standards both in the free state and in the straightened state.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.