• Title/Summary/Keyword: Defect Density

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Role of CaO in the Sintering of 12Ce-TZP Ceramics (12Ce-TZP 세라믹스의 소결에서의 CaO의 역할)

  • 박정현;문성환;박한수
    • Journal of the Korean Ceramic Society
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    • v.29 no.4
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    • pp.265-272
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    • 1992
  • Role of CaO in the sintering of 12Ce-TZP ceramics was studied. The addition of small amounts of CaO increase the densification rate of 12Ce-TZP by altering lattice defect structure and the diffusion coefficient of the rate controlling species, namely cerium and zirconium cations. CaO also inhibits grain growth during sintering and allows the sintering process to proceed to theoretical density by maintaining a high diffusion flux of vacancies from the pores to the grain boundaries. The inhibition of grain growth is accomplished by the segregation of solute at the grain boundaries, causing a decrease in the grain boundary mobility. The segregation of calcium was revealed by AES study.

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A study on the sound insulation performance of damping sheet attached to the train wall (철도차량벽체의 차음 성능에 대한 제진시트의 영향 고찰)

  • Seo, Dae-Hoon;Kim, Yang-Hann
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2007.11a
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    • pp.97-100
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    • 2007
  • This study deals with the sound insulation performance of the damping sheet, which is widely used in a train. The wall of train is assumed to be a plate made of steel and two damping sheets. In case of damping sheet only, the sound transmission loss follows the mass law. If a steel plate is attached to damping sheet, the transmission loss is found to be higher than single of only steel plate, as we can anticipated, about $3{\sim}5$ dB. This is very well known consequence that is because the density of area increases. However, the increase of the transmission loss is not higher than what we can expect by the mass law. That's because the steel is perfectly blocked from the transmission of the air ; There is no defect in that material.

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Trend and issues of the bulk FinFET (벌크 FinFET의 기술 동향 및 이슈)

  • Lee, Jong-Ho;Choi, Kyu-Bong
    • Vacuum Magazine
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    • v.3 no.1
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    • pp.16-21
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    • 2016
  • FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.

Transport phenomena of a-Se:As thin film for digital X-ray Conversion Material (디지털 X-선 변환물질을 위한 비소(As) 첨가 비정질 셀레늄(a-Se) 박막의 수송현상)

  • Park, Chang-Hee;Kim, Jae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.282-283
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    • 2006
  • The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

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SLS of Si Films on Polymer Substrates;Materials and Devices

  • Limanov, A.B.;Wilt, P.C. van der;Kane, M.G.;Firester, A.H.;Goodman, L.;Lee, J;Abelson, J.R.;Im, James S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.491-494
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    • 2006
  • A number of research groups and companies have succeeded in employing various SLS schemes to create low defect-density Si films on glass substrates for making high performance TFTs. In this paper, we first point out that SLS can be utilized to just as effectively handle crystallization of thin Si films on polymer substrates, and then present preliminary results on high-performance circuits that are built using the materials.

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The characteristics of Organic Thin Film Transistors with high-k dielectrics

  • Kim, Chang-Su;Kim, Woo-Jin;Jo, Sung-Jin;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1288-1290
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    • 2005
  • We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

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On Electric Field Induced Processes in Ionic Compounds

  • Schmalzried, H.
    • Journal of the Korean Ceramic Society
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    • v.38 no.6
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    • pp.499-505
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    • 2001
  • The behaviour of ionic compound crystals under combined chemical and externally applied electrical potential gradients is discussed. Firstly, a systematic overview is given. Then a formal analysis follows. The transport equations of the ions and the electric defects predict that even with reversible electrodes demixing, and in particular decomposition of the compound will occur if the applied d.c. current density is sufficiently high. These predictions are illustrated by appropriate experiments. With the help of the solid solution (Me, Fe)O, where Fe-ions are the dilute species, we investigate experimentally the behaviour of a ternary ionic crystal under a d.c. electric current load. All the compounds were placed in a galvanic cell, and the internal reactions which then could be observed were driven by the electric field in this cell. In addition, we discuss the influence of the electric field on the classical solid state reaction AX+BX=ABX$_2$, if again the reaction couple is placed in a galvanic cell.

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Alternation of Sleep Structure and Circadian Rhythm in Alzheimer's Disease (알츠하이머 치매에서 수면구조 및 일주기리듬의 변화)

  • Sohn, Chang-Ho
    • Sleep Medicine and Psychophysiology
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    • v.9 no.1
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    • pp.9-13
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    • 2002
  • Alzheimer's disease (AD) is one of the most common and devastating dementing disorders of old age. Most AD patients showed significant alternation of sleep structure as well as cognitive deficit. Typical findings of sleep architecture in AD patients include lower sleep efficiency, higher stage 1 percentage, and greater frequency of arousals. The slowing of EEG activity is also noted. Abnormalities in REM sleep are of particular interest in AD because the cholinergic system is related to both REM sleep and AD. Several parameters representing REM sleep structure such as REM latency, the amount of REM sleep, and REM density are change in patients with AD. Especially, measurements of EEG slowing during tonic REM sleep can be used as an EEG marker for early detection of possible AD. In addition, a structural defect in the suprachiasmatic nucleus is suggested to cause various chronobiological alternations in AD. Most of alternations related to sleep make sleep disturbances common and disruptive symptoms of AD. In this article, the author reviewed the alternation of sleep structure and circadian rhythm in AD patients.

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Non-Adiabatic Flamelet Modeling for Combustion Processes of Oxy-Natural Gas Flame

  • Kim, Gun-Hong;Kim, Yong-Mo
    • Journal of Mechanical Science and Technology
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    • v.19 no.9
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    • pp.1781-1789
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    • 2005
  • In order to realistically predict the combustion characteristics of the oxy-fuel flame, the present study employs the non-adiabatic flame let approach. In this combustion model, the detailed equilibrium chemistry is utilized to accurately account for the thermal dissociation as well as to properly include the radiative cooling effects on the detailed chemistry. Numerical results indicate that the present approach has the capability to correctly capture the essential features and precise structure of the oxy-fuel flames. In this work, the detailed discussion has been made for the characteristics of oxy-fuel flames, the capability and defect of the present approach and also uncertainties of experimental data.

On the LACBED Method to Determine the Nature of the Dislocation Defect in Crystalline Materials (결정체내의 전위 결함 형태를 결정하는 LACBED 방법에 관한 고찰)

  • Kim, Hwang-Su
    • Applied Microscopy
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    • v.35 no.4
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    • pp.64-73
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    • 2005
  • In this paper we discussed in details how to determine the nature of dislocations in a crystal such as a Burgers vector, the line vector of dislocation and the associated slip plane, using LACBED and usual imaging techniques. These techniques basically involve the application of Cherns and Prestone s rules, the simulations of LACBED patterns with a certain form of the dynamical diffraction theory. The theoretical aspects including necessary approximations for calculations also were in details discussed. As a test specimen for experiments, the foils of a pure aluminum, containing many dislocations with appropriate density for LACBED experiments, were used..