• 신재생에너지
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• 제8권1호
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• pp.24-34
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• 2012

The main issue of boron doped p-type czochralski-grown silicon solar cells is the degradation when they are exposed to light or minority carriers injection. This is due to the meta-stable defect such as boron-oxygen in the Cz-Si material. Although a clear explanation is still researching, recent investigations have revealed that the Cz-Si defect is related with the boron and the oxygen concentration. They also revealed how these defects act a recombination centers in solar cells using density function theory (DFT) calculation. This paper reviews the physical understanding and gives an overview of the degradation models. Therefore, various methods for avoiding the light-induced degradation in Cz-Si solar cells are compared in this paper.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Bulletin of the Korean Chemical Society
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• 제31권1호
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• pp.162-167
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• 2010

We investigated the adsorption and desorption characteristics of benzene molecules on $Si(001)-2{\times}n$ surfaces using a variable-low temperature scanning tunneling microscopy. When benzene was adsorbed on a $Si(001)-2{\times}n$ surface at a low coverage, five distinct adsorption configurations were found: tight-binding (TB), standard-butterfly (SB), twisted-bridge, diagonal-bridge, and pedestal. The TB and SB configurations were the most dominant ones and could be reversibly interconverted, diffused, and desorbed by applying an electric field between the tip and the surface. The population ratios of the TB and SB configurations were affected by the benzene coverage: at high coverage, the population ratio of SB increased over that of TB, which was favored at low coverage. The desorption yield decreased with increasing benzene coverage and/or density of vacancy defect. These results suggest that the interaction between the benzene molecules is important at a high coverage, and that the vacancy defects modify the adsorption and desorption energies of the benzene molecules on Si(001) surface.

• 대한기계학회논문집B
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• 제30권5호
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• Nuclear Engineering and Technology
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• 제55권3호
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• pp.958-967
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• 2023

This work studies the defect features in a dilute FeMnNi alloy by an Object Kinetic Monte Carlo (OKMC) model based on the "grey-alloy" method. The dose rate effect is studied at 573 K in a wide range of dose rates from 10^-8 to 10^-4 displacement per atom (dpa)/s and demonstrates that the density of defect clusters rises while the average size of defect clusters decreases with increasing dose rate. However, the dose-rate effect decreases with increasing irradiation dose. The model considered two realistic mechanisms for producing <100>-type self-interstitial atom (SIA) loops and gave reasonable production ratios compared with experimental results. Our simulation shows that the proportion of <100>-type SIA loops could change obviously with the dose rate, influencing hardening prediction for various dose rates irradiation. We also investigated ways to compensate for the dose rate effect. The simulation results verified that about a 100 K temperature shift at a high dose rate of 1×10^-4 dpa/s could produce similar irradiation microstructures to a lower dose rate of 1×10^-7 dpa/s irradiation, including matrix defects and deduced solute migration events. The work brings new insight into the OKMC modeling and the dose rate effect of the Fe-based alloys.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 춘계학술발표회논문집(3)
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• pp.231-237
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• 1996

Defect equilibrium equations were modelled, and the relations of P $o_2$, venus x were derived using the mass action law. The dominant defect species active in a specified region were determined by fitting the curve of experimental data to the calculated curve of log P $o_2$, versus log x for each theoretical model. The calculated curve for (2:1:2) and (Er')$^{x}$ in the hyperstoichiometric $U_{1-y}$E $r_{y}$ $O_{2＋x}$ and that for (2Er'quot;)$^{x}$ $_{dec}$ in the hypostoichiometric $U_{1-y}$E $r_{y}$ $O_{2－x}$ are in good agreement with the present experimental results. The sintering behavior of Er-doped U $O_2$ is observed with erbium content in oxidizing and reducing atmospheres. For sintering in oxidizing atmosphere, sintered density decreases as increasing y in $U_{1-y}$E $r_{y}$ $O_{2＋x}$. However, in hydrogen atmosphere, sintered density decreases as increasing y at lower erbium content but the density increases again above y=0.10. In oxidizing sintering conditions, the formation of (Er'U')$^{x}$ clusters hinders the diffusion of cations, and hence the sinterability of Er-doped U $O_2$ decreases. In reducing atmosphere of Er-doped U $O_2$ for higher Er concent, the oxygen vacancies make (Er')$^{x}$ cluster decompose by charge compensation and the concentration of mobile cations increases, thereby improving the sinterability.ntration of mobile cations increases, thereby improving the sinterability.ability.

• 대한전자공학회논문지
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• 제26권5호
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• pp.52-59
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• 1989

얇은 산화막의 신뢰성을 정전류 스트레스 방법으로 조사하였다. 실험에 사용된 소자는 산화막 두께가 20~25nm인 다결정실리콘 MOS 커패시터 이었다. VLSI 신뢰성 평가에 필수적인 자동측정 및 통계적 데이타분석을 HP9000 컴퓨터를 이용하여 수행하였다.측정한 TDDB 결과로부터 산화막의 결합밀도, 절연파괴 전하량(Qbd), 수명등을 측정한 결과 스트레스를 가하는 극성에 따라서 다른 특성이 나타났다. 결함밀도는 (-) 게이트 주입의 경우에 62개$cm^2$ 이었다. 절연파괴 전하량은 (+) 게이트 주입의 경우 30C/$cm^2$이었고, (-)게이트 주입의 경우가 1.43$cm^2$/A 이었고, (+)게이트 주입의 경우가 1.25$cm^2$/A이었다.

• Current Photovoltaic Research
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• 제2권2호
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• pp.59-62
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• 2014

Minority carrier diffusion length is one of the most important parameters of solar cells, especially for short circuit current density (Jsc). In this report, we proposed the calculating method of the minority carrier diffusion length ($L_n$) in CIGS solar cells through biased quantum efficiency (QE). To verify this method's reliability, we chose two CIGS samples which have different grain size and calculated $L_n$ for each sample. First of all, we calculated out that $L_n$ was 56nm and 97nm for small and large grain sized-cell through this method, respectively. Second, we found out the large grain sized-cell has about 7 times lower defect density than the small grain sized-cell using drive level capacitance profiling (DLCP) method. Consequently, we confirmed that $L_n$ was mainly affected by the micro-structure and defect density of CIGS layer, and could explain the cause of Jsc difference between two samples having same band gap.

• 한국결정학회지
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• 제8권1호
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• pp.26-32
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• 1997

수열법을 이용하여 압전수정을 성장하고 각종 성장결함을 분석하였다. 4 중량퍼센트 NaOH, 성장온도 $340-360^{\circ}C$, 온도구배 $20-40^{\circ}C$의 성장조건에서 (0001)방향의 ZY 종자결정, 합성수정을 원료로 하였을 경우 성장속도는 0.25-0.65 mm/day 였다. 원료로써 합성수정을 사용하고 저전위 종자결정 위에서 수평 종자결정 배치법으로 성장된 압전수정의 전위밀도는 20.0개/$cm^2$, 에치채널 밀도는 5.0개/$cm^2,\;10\mu$ 이상의 함유물 농도는 2.4개/$cm^3$, 알파값은 0.019였으며, IEC 758규격에 의한 등급분류는 에치채널 밀도 1등급, 함유물 농도 Ia등급, 알파값 A등급이었다.

• 한국주조공학회지
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• 제24권2호
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• pp.94-100
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• 2004

Gas porosity which is a common defect in aluminum alloy casting, is also thought to be severer in aluminum alloy castings produced by lost foam process due to the pyrolysis of the polystyrene foam pattern during pouring. Fundamental experiments were carried out to evaluate the effect of process variables such as the melt treatment, the cooling rate and pouring temperature on the density and mechanical properties in A356.2 castings with simple bar shape. The density of grain refined specimen was slightly lower than that of degassed one, but was higher than that of no treated one and that of shot ball packed specimen was higher than the other specimens. The tensile strength and elongation were in the ranges of $200{\sim}230MPa$ and $0.5{\sim}1.5%$ respectively. The density and hardness of lost foam cast specimens decreased with increase in pouring temperature.