• Current Optics and Photonics
• /
• 제2권4호
• /
• pp.361-367
• /
• 2018

Ultrafast deep-ultraviolet (DUV) pulse generation from the subwavelength aperture of a plasmonic waveguide was investigated. The plasmonic nanofocusing of near-infrared (NIR) pulses was exploited to enhance DUV photoemission of surface third harmonic generation (STHG) at the amorphous $SiO_2$ dielectric. The generated DUV pulses which are successfully made from a nano-aperture using 10 fs NIR pulses have a spectral bandwidth of 13 nm at a carrier wavelength of 266 nm. This method is applicable for tip-based ultrafast UV laser spectroscopy of nanostructures or biomolecules

• Journal of the Korean Physical Society
• /
• 제73권12호
• /
• pp.1879-1883
• /
• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Journal of Ceramic Processing Research
• /
• 제21권
• /
• pp.23-27
• /
• 2020

The enhanced optical output power of AlGaN/GaN deep ultraviolet light-emitting diodes (UV LEDs) were demonstrated by using the breakdown-induced conductive channels (BICCs). The BICCs could be made by electrical reverse biasing between two adjacent contact pads formed on top p-type layers with a certain distance, causing an electrical breakdown of pn junction and hence a generation of conductive channels. Accordingly, the reflective Ni/Ag/Pt electrodes could be formed simultaneously on the top p-type layer and the other p-type layer with the BICCs, acting as the p- and n-contacts, respectively. The deep UV LEDs fabricated with the BICCs produced the enhanced optical output power by 15 % as compared to the reference LEDs, which were fabricated with the conventional Ti/Al/Ti/Au layers formed on mesa-etched n-type layer. This could be due to the reduced light absorption at the n-contact pads, indicating that the use of BICCs will be very suitable for obtaining better output performance of deep UV emitters.

• 천문학회보
• /
• 제32권1호
• /
• pp.99.1-99.1
• /
• 2007

• 한국전기전자재료학회논문지
• /
• 제28권5호
• /
• pp.277-284
• /
• 2015

The humans are under attack involving the hazardous environment and pathogen/biotoxin aerosol that is realistic concerned. A portable, fast, reliable, and cheap Pathogen and Biotoxin Aerosol threat Detection(PBAD) trigger is an important technology for detect-to-protect and detect-to-treat system because the man-made biological terror is a fast and lethal infection. The ultraviolet C(UVC) wavelengths light source is key issue for PBAD that is sensitive because of strong fluorescence cross section from fluorescent amino acids in proteins such as tryptophan and tyrosine. The UVC-light emitting diode(LED) is emerging light source technology as alternative to laser or lamps as they offer several advantages. This paper discussed about the design consideration of UVC-LED for the PBAD system. The UVC-LED and PBAD technology, currently available or in development, are also discussed.

• 한국광학회지
• /
• 제4권3호
• /
• pp.252-259
• /
• 1993

극자외선 과장을 사용하는 micro-lithography를 위해 등배율을 갖는 4-반사경 holosymmetric system을 설계하였다. Holosymmetric system에서는 모든 차수의 코마와 왜곡수차가 영이 된다. 이 원리를 4-구명경계에 적용하여 등배율을 갖고 5개의 3차 수차가 모두 제거된 4-구면 반사경 holosymmetric system에 대해 유일한 해를 완전히 해석적인 표현으로 구하였다. 이 4-구면경계에 남아있는 고차 수차들을 보정하기 위해 holosymmetric 성질을 유지하면서 비구면을 채용하였고 그결과 개구수 0.33과 image field diameter 7.6mm 이내에서 극자외선 파장 $0.248{\mu}m$(KrF 엑시머 레이저 빔)에 대해 거의 회절한계의 수차성능을 갖는 비구면 4-반사경 holosymmetric system를 얻었다.

• Nanomaterials
• /
• 제12권17호
• /
• pp.2983-2998
• /
• 2022

In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag₂O/β-Ga₂O₃ heterojunction was fabricated by depositing a p-type Ag₂O thin film onto an n-type β-Ga₂O₃ layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 ℃ were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 ℃, the as-fabricated device had a low leakage current of 4.24 × 10^-11 A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photoresponsivity of 12.87 mA/W was obtained at a 100 µW/cm2 light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 × 10¹¹ Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag₂O/β-Ga₂O₃ heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.

• 한국재난정보학회 논문집
• /
• 제17권2호
• /
• pp.195-205
• /
• 2021

연구목적: 연안건축 재료의 자외선 반사율과 투과율은 건물의 자외선 방출 및 방출의 주요 요인 중 하나이다. 이 연구에서는 건축 자재의 여러 종류의 자외선 스펙트럼 반사율이 측정되었으며 또한 표면 특성 중에 하나인 명도, 거칠기 및 색도와의 관계에 대해서도 검토 및 제안했다. 연구방법: 본 연구에서는 CIE 분류에 의거하여 자외선영역은 단파장 UV-C (10nm~280nm), 중파장 영역 UV-B (280-315 nm), 장파장 영역 UV-A (315-400nm), 가시광선 영역 (400nm~780nm)으로 정했으며, 연속적으로 측정하기 위하여 분광 광도계를 사용했다. 연구결과: 나무의 경우 반사율은 가시광선역 55-68 %, UV-A ^* 7-12 %, UV-B^* 4-5 %로 나타났다. 벽타일은 가시광선역 18-40 %, UV-A^* 8-20 %, UV-B^* 7-8 % 로 나타났으며, 콘크리트는 가사광선역 37 %, UV-A^* 28 %, UV-B^* 19 %로 나타났다. 결론: 가시광선 반사율에 의해 자외선 반사율을 추정 할 수 있으며, 또한 자외선 차단을 할 때에는 용도에 따라 다양한 재료를 선택하는 것이 중요하다.

• 전자통신동향분석
• /
• 제13권5호통권53호
• /
• pp.38-52
• /
• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.

• 천문학회보
• /
• 제44권2호
• /
• pp.42.3-42.3
• /
• 2019

We translate Solar Dynamics Observatory/Atmospheric Imaging Assembly (AIA) ultraviolet (UV) multi-channel images into another UV single-channel image using a deep learning algorithm based on conditional generative adversarial networks (cGANs). The base input channel, which has the highest correlation coefficient (CC) between UV channels of AIA, is 193 Å. To complement this channel, we choose two channels, 1600 and 304 Å, which represent upper photosphere and chromosphere, respectively. Input channels for three models are single (193 Å), dual (193+1600 Å), and triple (193+1600+304 Å), respectively. Quantitative comparisons are made for test data sets. Main results from this study are as follows. First, the single model successfully produce other coronal channel images but less successful for chromospheric channel (304 Å) and much less successful for two photospheric channels (1600 and 1700 Å). Second, the dual model shows a noticeable improvement of the CC between the model outputs and Ground truths for 1700 Å. Third, the triple model can generate all other channel images with relatively high CCs larger than 0.89. Our results show a possibility that if three channels from photosphere, chromosphere, and corona are selected, other multi-channel images could be generated by deep learning. We expect that this investigation will be a complementary tool to choose a few UV channels for future solar small and/or deep space missions.