• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.713-719
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.501-504
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• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.723-725
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• 1998

STI CMP process are substituting gradually for LOCOS(Local Oxidation of Silicon) process to be available below sub-0.5um technology and to get planarized. The other hand, STI CMP process(especially STI CMP with RIE etch back process) has some kinds of defect like Nitride residue, Torn Oxide defect, etc. In this paper, we studied how to reduce Torn Oxide defects after STI CMP with RIE etch back process. Although Torn Oxide defects which occur on Oxide on Trench area is not deep and not sever, Torn oxide defects on Moat area is sometimes very deep and makes the yield loss. We did test on pattern wafers witch go through Trench process, APCVD process, and RIE etch back process by using an REC 472 polisher, IC1000/SUV A4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the root causes of torn oxide defects.

• 한국진공학회지
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• 제11권4호
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• pp.235-239
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• 2002

식각된 트랜치의 내부에 다결정 실리콘 측벽을 형성하고, 감압 화학기상 증착법(RPCVD: Reduced Pressure Chemical Vapor Deposition)을 이용해서 이를 선택적으로 성장시킴으로써 트랜치를 채우는 새로운 트랜치 격리방법을 제안하였다. 공정진행 결과, 측벽의 초기깊이와 선택적으로 성장되는 실리콘의 두께가 트랜치의 최종형태를 결정하는 가장 중요한 요소임을 확인할 수 있었다. 이 방법은 CMP 공정을 거치지 않고도 트랜치의 내부만이 실리콘으로 채워진 구조를 구현함으로써, 공정을 단순화할 뿐만 아니라 불균일 연마와 흠집발생 등 기존의 CMP 공정에서 발생할 수 있는 문제들을 방지할 수 있다는 장점을 지니고 있다.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• 한국지반공학회논문집
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• 제18권4호
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• pp.239-248
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• 2002

안정액(bentonite slurry)을 이용한 지하연속벽의 건설은 굴착된 trench 내에서 안정액이 침투케익과 표면케익을 포함한 불투수막을 형성함으로서 trench 의 안정성을 유지할 수가 있다. 그러므로 구조용 지하연속벽 건설이나 폐기물 매립장의 차수용 연속벽 건설시 지반조건 및 주변여건의 변화에 의하여 여러 가지 문제가 발생 될 수 있다. 본 논문은 안정액 유출과 불투수케익 형성과정을 대형실험으로 모델링하여 그 결과가 slurry trench 안정성에 미치는 영향을 평가하고, 현장조건에 적합한 설계절차를 제시하였다.

• 한국수산과학회지
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• 제39권spc1호
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• pp.203-213
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• 2006

The spatial patterns of meiobenthic communities in deep-sea sediment were examined. Sediment samples for analyzing of meiobenthic community structure were collected using a remote operated vehicle (ROV), multiple corer TV grab at 20 stations at five sites. In all, 15 meiofauna groups were recorded. Nematodes were the most abundant taxon. Benthic foraminiferans, harpacticoid copepods, polychaetes, and crustacean naupii were also dominant groups at all sites. The total meiofauna density at the study sites varied from 49 to 419 ind./$10cm^2$. The maximum density was recorded at a site located in Challenger Deep in the Mariana trench where simple benthic foraminifera with organic walls flourish. These distinctive taxa seem to be characteristic of the deepest ocean depths. Active hydrothermal sediments contain up to 150 harpacticoid copepods per $10cm^2$ of sediment. In a inactive ridge sediments, devoid of macrofaunal organisms:, the abundance of harpacticoid copepods never exceeded 15 ind./$10cm^2$. Multivariate analysis (multidimensional scaling) revealed significant differences in community structure among the three regions; near an active hydrothermal vent, in the deepest ocean depths and at typical deep-sea bed sites.

• 한국석유지질학회:학술대회논문집
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• 대한자원환경지질학회/한국석유지질학회/한국암석학회 2000년도 추계공동학술발표회 초록집
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• pp.35-35
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• 2000

• 한국석유지질학회:학술대회논문집
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• 대한자원환경지질학회/한국석유지질학회/한국암석학회 2000년도 추계공동학술발표회 초록집
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• pp.34-34
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• 2000