• Journal of Photoscience
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• 제3권1호
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• pp.39-42
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• 1996

The photochemical reaction of phenyl(tribromomethyl)mercury with nido-decaborane gives a new boron cluster expanded compound. The two borons at the 6- and 9- positions in decaborane behave as electrophilic centers for the reaction with dibromocarbene. The first step in this reaction is the addition of two molar equivalents of dibromocarbene which is produced from phenyl(tribromomethyl)mercury to nido-decaborane. In the second step the unstable intermediate generates the product, 1,2-$Br_2C_2B_{10}H_{10}$ through loss of H$_2$.

• Bulletin of the Korean Chemical Society
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• 제23권6호
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• pp.791-793
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• 2002

• 한국세라믹학회지
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• 제26권2호
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• pp.179-186
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• 1989

The preparation of the fine BN powders by ammonia-nitridation of ammonia-decaborane derivate was attempted at temperature between 300 to 150$0^{\circ}C$. The formation mechanism of BN was examined and the resulant BN powder was characterized by means of IR, XRD, SEM and PSA method. In the nitridation below 80$0^{\circ}C$ bonding materials were identified with mainly BH and NH but above 80$0^{\circ}C$ with BN by IR spectra and X-ray patterns. Crystalite size, lattice constant and particle size distribution of hexagonal BN prepared at 1, 50$0^{\circ}C$ were La=470$\AA$, Lc=180$\AA$, a=2.5062$\pm$1$\AA$, c=6.8285$\pm$2$\AA$ and 2.0-5.4${\mu}{\textrm}{m}$, respectively.

• Bulletin of the Korean Chemical Society
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• 제19권12호
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• pp.1398-1402
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• 1998

• Journal of Photoscience
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• 제1권2호
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• pp.89-94
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• 1994

The reaction of decaborane with trimethylsilyldiazomethane gives 1, 2-bis (trimethylsilyl)-1, 2-carba-closo-dodecaborane(12). This compound is similar to the icosahedral cage structure of o-carborane. This formation of the first adduct proceeds through deprotonation of the acidic center of B(9) and B(6) by intermolecular attack by the lone electron pair of the carbene, : CHSiMe$_3$. The yield of product is influenced by irradiation and thermal conditions.

• 한국진공학회지
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• 제11권3호
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• pp.151-158
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• 2002

Decaborane ($B_{10}H_{14}$) 이온 주입법으로 n-type Si (100) 기판에 ultra-shallow $p^{+}-n$ 접합을 형성시켰다. 이온 주입에너지는 5kV와 10kV, 이온 선량은 $1\times10^{12}\textrm{cm}^2$와 $1\times10^{13}\textrm{cm}^2$로 decaborane을 이온 주입시켰다. 이온 주입된 시료들은 $N_2$ 분위기에서 $800^\{\circ}C$, $900^{\circ}C$, $1000^{\circ}C$에서 10초 동안 RTA(Rapid Thermal Annealing) 처리를 하였다. 또한 가속에너지에 따른 결함을 확인하기 위해서 15 kV의 이온 주입 에너지에서 $1\times10^{14}\textrm{cm}^2$만큼 이온 주입하였다. 2 MeV $^4He^{2+}$ channeling spectra에서 15 kV로 주입된 시료가 bare n-type Si와 5 kV, 10 kV의 에너지로 주입된 시료보다 주입시 생긴 결함에 의해 backscattering yield가 더 높게 나타났으며 spectra로부터 얻은 이온 주입으로 인한 비정질층의 두께는 표면으로부터 가속전압이 5kV, 10kV, 15kV일 때 각각 1.9nm, 2.5nm, 4.3nm였다. 10 kV에서 이온 주입된 시료를 $800^{\circ}C$ 열처리 한 결과 결함의 회복으로 인해 bare Si와 비슷한 backscattering yield를 보였으며 이때의 계산된 비정질 층의 두께는 0.98 nm이었다. 홀 측정과 면저항 측정은 dopant의 활성화가 주입된 에너지, 이온 선량, 열처리 온도에 따라 증가함을 보여주었다. I-V 측정 결과 누설 전류 밀도는 열처리 온도가 $800^{\circ}C$에서 $1000^{\circ}C$까지 증가함에 따라 감소하였고 주입에너지가 5kV에서 10kV까지 증가함에 따라 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.57-57
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• 2002

• 통합자연과학논문집
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• 제11권2호
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• pp.61-68
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• 2018

New 4,4'-[6-(o-carboranylalkoxy)-1,3,5-triazine-2,4-diyl]dimorpholine derivatives have been prepared by reacting 4,4'-[6-(alkynyloxy)-1,3,5-triazine-2,4-diyl]dimorpholines with decaborane and N,N-dimethylaniline as base. The intermediate compounds, 4,4'-[6-(alkynyloxy)-1,3,5-triazine-2,4-diyl]dimorpholines, have been prepared by reacting 4,4'-[6-chloro-1,3,5-triazine-2,4-diyl]dimorpholines with prop-2-yn-1-ol, but-3-yn-1-ol, and pet-4-yn-1-ol, and potassium tert-butoxide (t-BuOK) as base. The structure of these compounds has been confirmed by IR, $^1H$, $^{11}B$, and $^{13}C$ NMR and X-ray crystallographic studies.