• Title/Summary/Keyword: Decaborane

Search Result 8, Processing Time 0.019 seconds

PHOTOCHEMICAL REACTION OF POLYHEDRAL BORON COMPOUND WITH DIBROMOCARBENE

  • Sung, Dae-Dong;Chang, Jeong-Ah;Kang, Dong-Hyo
    • Journal of Photoscience
    • /
    • v.3 no.1
    • /
    • pp.39-42
    • /
    • 1996
  • The photochemical reaction of phenyl(tribromomethyl)mercury with nido-decaborane gives a new boron cluster expanded compound. The two borons at the 6- and 9- positions in decaborane behave as electrophilic centers for the reaction with dibromocarbene. The first step in this reaction is the addition of two molar equivalents of dibromocarbene which is produced from phenyl(tribromomethyl)mercury to nido-decaborane. In the second step the unstable intermediate generates the product, 1,2-$Br_2C_2B_{10}H_{10}$ through loss of H$_2$.

  • PDF

Preparation of Fine Boron Nitride Powders from Decaborane and Ammonia (Decaborane과 Ammonia로부터 질화붕소(BN) 미분체의 합성)

  • 손영국;이윤복;박홍채;오기동
    • Journal of the Korean Ceramic Society
    • /
    • v.26 no.2
    • /
    • pp.179-186
    • /
    • 1989
  • The preparation of the fine BN powders by ammonia-nitridation of ammonia-decaborane derivate was attempted at temperature between 300 to 150$0^{\circ}C$. The formation mechanism of BN was examined and the resulant BN powder was characterized by means of IR, XRD, SEM and PSA method. In the nitridation below 80$0^{\circ}C$ bonding materials were identified with mainly BH and NH but above 80$0^{\circ}C$ with BN by IR spectra and X-ray patterns. Crystalite size, lattice constant and particle size distribution of hexagonal BN prepared at 1, 50$0^{\circ}C$ were La=470$\AA$, Lc=180$\AA$, a=2.5062$\pm$1$\AA$, c=6.8285$\pm$2$\AA$ and 2.0-5.4${\mu}{\textrm}{m}$, respectively.

  • PDF

A PHOTOCHEMICAL REACTION OF DECABORANE WITH TRIMETHYLSILYLDIAZOMETHANE

  • Sung, Dae-Dong;Kim, Chang-Soo;Lee, Jae-Duck;Lim, Gui-Taek;Uhm, Tae-Seop;Park, Yong Tae
    • Journal of Photoscience
    • /
    • v.1 no.2
    • /
    • pp.89-94
    • /
    • 1994
  • The reaction of decaborane with trimethylsilyldiazomethane gives 1, 2-bis (trimethylsilyl)-1, 2-carba-closo-dodecaborane(12). This compound is similar to the icosahedral cage structure of o-carborane. This formation of the first adduct proceeds through deprotonation of the acidic center of B(9) and B(6) by intermolecular attack by the lone electron pair of the carbene, : CHSiMe$_3$. The yield of product is influenced by irradiation and thermal conditions.

  • PDF

Electrical Properties of Ultra-shallow$p^+-n$ Junctions using $B_{10}H_{14}$ ion Implantation ($B_{10}H_{14}$ 이온 주입을 통한 ultra-shallow $p^+-n$ junction 형성 및 전기적 특성)

  • 송재훈;김지수;임성일;전기영;최덕균;최원국
    • Journal of the Korean Vacuum Society
    • /
    • v.11 no.3
    • /
    • pp.151-158
    • /
    • 2002
  • Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

Bis(morpholine)-substituted 1,3,5-Triazines Derivatives: Synthesis and Structural Study

  • Lee, Jong-Dae
    • Journal of Integrative Natural Science
    • /
    • v.11 no.2
    • /
    • pp.61-68
    • /
    • 2018
  • New 4,4'-[6-(o-carboranylalkoxy)-1,3,5-triazine-2,4-diyl]dimorpholine derivatives have been prepared by reacting 4,4'-[6-(alkynyloxy)-1,3,5-triazine-2,4-diyl]dimorpholines with decaborane and N,N-dimethylaniline as base. The intermediate compounds, 4,4'-[6-(alkynyloxy)-1,3,5-triazine-2,4-diyl]dimorpholines, have been prepared by reacting 4,4'-[6-chloro-1,3,5-triazine-2,4-diyl]dimorpholines with prop-2-yn-1-ol, but-3-yn-1-ol, and pet-4-yn-1-ol, and potassium tert-butoxide (t-BuOK) as base. The structure of these compounds has been confirmed by IR, $^1H$, $^{11}B$, and $^{13}C$ NMR and X-ray crystallographic studies.